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Title: Vacancy effects on the formation of helium and krypton cavities in 3-C-SiC irradiated and annealed at elevated temperatures

Abstract

Polycrystalline 3C-SiC was sequentially irradiated at 400 and 750°C with 120 keV He 2+ and 4 MeV Kr 15+ ions to 10 17 and 41016 cm -2, respectively. The Kr 15+ ions penetrated the entire depth of the He 2+ ion implantation region. Three areas of He 2+, Kr 15+ and He 2+ + Kr 15+ ion implanted 3C-SiC were created through masked overlapping irradiations. The sample was subsequently annealed at 1600°C in vacuum and characterized using cross-sectional transmission electron microscopy and energy-dispersive x-ray spectroscopy. Compared to the He 2+ ion only implanted 3C-SiC, helium cavities in the He 2+ and Kr15+ co-implanted 3C-SiC had a smaller size but higher density. At 25 dpa, presence of He in the co-implanted 3C-SiC significantly promoted cavity growth; much smaller voids were formed in the Kr 15+ ion only irradiated 3C-SiC at the same dose. In addition, local Kr migration and trapping at cavities occurred, but long-range Kr diffusion in 3C-SiC was not observed up to 1600°C.

Authors:
; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1373853
Report Number(s):
PNNL-SA-124009
AT2030110
DOE Contract Number:  
AC05-76RL01830
Resource Type:
Book
Resource Relation:
Related Information: Fusion Materials Semiannual Progress Report For Period Ending December 31, 2016, DOE-ER-0313/61:67-68
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Zang, Hang, Liu, Wenbo, Li, Tao, He, Chaohui, Yun, Di, Jiang, Weilin, Devaraj, Arun, Edwards, Danny J., Henager, Charles H., Kurtz, Richard J., and Wang, Zhiguang. Vacancy effects on the formation of helium and krypton cavities in 3-C-SiC irradiated and annealed at elevated temperatures. United States: N. p., 2017. Web.
Zang, Hang, Liu, Wenbo, Li, Tao, He, Chaohui, Yun, Di, Jiang, Weilin, Devaraj, Arun, Edwards, Danny J., Henager, Charles H., Kurtz, Richard J., & Wang, Zhiguang. Vacancy effects on the formation of helium and krypton cavities in 3-C-SiC irradiated and annealed at elevated temperatures. United States.
Zang, Hang, Liu, Wenbo, Li, Tao, He, Chaohui, Yun, Di, Jiang, Weilin, Devaraj, Arun, Edwards, Danny J., Henager, Charles H., Kurtz, Richard J., and Wang, Zhiguang. Mon . "Vacancy effects on the formation of helium and krypton cavities in 3-C-SiC irradiated and annealed at elevated temperatures". United States. doi:.
@article{osti_1373853,
title = {Vacancy effects on the formation of helium and krypton cavities in 3-C-SiC irradiated and annealed at elevated temperatures},
author = {Zang, Hang and Liu, Wenbo and Li, Tao and He, Chaohui and Yun, Di and Jiang, Weilin and Devaraj, Arun and Edwards, Danny J. and Henager, Charles H. and Kurtz, Richard J. and Wang, Zhiguang},
abstractNote = {Polycrystalline 3C-SiC was sequentially irradiated at 400 and 750°C with 120 keV He2+ and 4 MeV Kr15+ ions to 1017 and 41016 cm-2, respectively. The Kr15+ ions penetrated the entire depth of the He2+ ion implantation region. Three areas of He2+, Kr15+ and He2+ + Kr15+ ion implanted 3C-SiC were created through masked overlapping irradiations. The sample was subsequently annealed at 1600°C in vacuum and characterized using cross-sectional transmission electron microscopy and energy-dispersive x-ray spectroscopy. Compared to the He2+ ion only implanted 3C-SiC, helium cavities in the He2+ and Kr15+ co-implanted 3C-SiC had a smaller size but higher density. At 25 dpa, presence of He in the co-implanted 3C-SiC significantly promoted cavity growth; much smaller voids were formed in the Kr15+ ion only irradiated 3C-SiC at the same dose. In addition, local Kr migration and trapping at cavities occurred, but long-range Kr diffusion in 3C-SiC was not observed up to 1600°C.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Feb 27 00:00:00 EST 2017},
month = {Mon Feb 27 00:00:00 EST 2017}
}

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