Vacancy effects on the formation of helium and krypton cavities in 3-C-SiC irradiated and annealed at elevated temperatures
Polycrystalline 3C-SiC was sequentially irradiated at 400 and 750°C with 120 keV He2+ and 4 MeV Kr15+ ions to 1017 and 41016 cm-2, respectively. The Kr15+ ions penetrated the entire depth of the He2+ ion implantation region. Three areas of He2+, Kr15+ and He2+ + Kr15+ ion implanted 3C-SiC were created through masked overlapping irradiations. The sample was subsequently annealed at 1600°C in vacuum and characterized using cross-sectional transmission electron microscopy and energy-dispersive x-ray spectroscopy. Compared to the He2+ ion only implanted 3C-SiC, helium cavities in the He2+ and Kr15+ co-implanted 3C-SiC had a smaller size but higher density. At 25 dpa, presence of He in the co-implanted 3C-SiC significantly promoted cavity growth; much smaller voids were formed in the Kr15+ ion only irradiated 3C-SiC at the same dose. In addition, local Kr migration and trapping at cavities occurred, but long-range Kr diffusion in 3C-SiC was not observed up to 1600°C.
- Research Organization:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 1373853
- Report Number(s):
- PNNL-SA-124009; AT2030110
- Resource Relation:
- Related Information: Fusion Materials Semiannual Progress Report For Period Ending December 31, 2016, DOE-ER-0313/61:67-68
- Country of Publication:
- United States
- Language:
- English
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