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Title: Resistive switching phenomena: A review of statistical physics approaches

Abstract

Here we report that resistive switching (RS) phenomena are reversible changes in the metastable resistance state induced by external electric fields. After discovery ~50 years ago, RS phenomena have attracted great attention due to their potential application in next-generation electrical devices. Considerable research has been performed to understand the physical mechanisms of RS and explore the feasibility and limits of such devices. There have also been several reviews on RS that attempt to explain the microscopic origins of how regions that were originally insulators can change into conductors. However, little attention has been paid to the most important factor in determining resistance: how conducting local regions are interconnected. Here, we provide an overview of the underlying physics behind connectivity changes in highly conductive regions under an electric field. We first classify RS phenomena according to their characteristic current–voltage curves: unipolar, bipolar, and threshold switchings. Second, we outline the microscopic origins of RS in oxides, focusing on the roles of oxygen vacancies: the effect of concentration, the mechanisms of channel formation and rupture, and the driving forces of oxygen vacancies. Third, we review RS studies from the perspective of statistical physics to understand connectivity change in RS phenomena. We discuss percolationmore » model approaches and the theory for the scaling behaviors of numerous transport properties observed in RS. Fourth, we review various switching-type conversion phenomena in RS: bipolar-unipolar, memory-threshold, figure-of-eight, and counter-figure-of-eight conversions. Finally, we review several related technological issues, such as improvement in high resistance fluctuations, sneak-path problems, and multilevel switching problems.« less

Authors:
 [1];  [2];  [3]
  1. Korea Inst. for Advanced Study, Seoul (South Korea). School of Physics
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
  3. Center for Correlated Electron Systems, Seoul (South Korea) ; Seoul National Univ. (Korea, Republic of)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1263835
Alternate Identifier(s):
OSTI ID: 1229652
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Reviews
Additional Journal Information:
Journal Volume: 2; Journal Issue: 3; Journal ID: ISSN 1931-9401
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE

Citation Formats

Lee, Jae Sung, Lee, Shinbuhm, and Noh, Tae Won. Resistive switching phenomena: A review of statistical physics approaches. United States: N. p., 2015. Web. doi:10.1063/1.4929512.
Lee, Jae Sung, Lee, Shinbuhm, & Noh, Tae Won. Resistive switching phenomena: A review of statistical physics approaches. United States. doi:10.1063/1.4929512.
Lee, Jae Sung, Lee, Shinbuhm, and Noh, Tae Won. Mon . "Resistive switching phenomena: A review of statistical physics approaches". United States. doi:10.1063/1.4929512. https://www.osti.gov/servlets/purl/1263835.
@article{osti_1263835,
title = {Resistive switching phenomena: A review of statistical physics approaches},
author = {Lee, Jae Sung and Lee, Shinbuhm and Noh, Tae Won},
abstractNote = {Here we report that resistive switching (RS) phenomena are reversible changes in the metastable resistance state induced by external electric fields. After discovery ~50 years ago, RS phenomena have attracted great attention due to their potential application in next-generation electrical devices. Considerable research has been performed to understand the physical mechanisms of RS and explore the feasibility and limits of such devices. There have also been several reviews on RS that attempt to explain the microscopic origins of how regions that were originally insulators can change into conductors. However, little attention has been paid to the most important factor in determining resistance: how conducting local regions are interconnected. Here, we provide an overview of the underlying physics behind connectivity changes in highly conductive regions under an electric field. We first classify RS phenomena according to their characteristic current–voltage curves: unipolar, bipolar, and threshold switchings. Second, we outline the microscopic origins of RS in oxides, focusing on the roles of oxygen vacancies: the effect of concentration, the mechanisms of channel formation and rupture, and the driving forces of oxygen vacancies. Third, we review RS studies from the perspective of statistical physics to understand connectivity change in RS phenomena. We discuss percolation model approaches and the theory for the scaling behaviors of numerous transport properties observed in RS. Fourth, we review various switching-type conversion phenomena in RS: bipolar-unipolar, memory-threshold, figure-of-eight, and counter-figure-of-eight conversions. Finally, we review several related technological issues, such as improvement in high resistance fluctuations, sneak-path problems, and multilevel switching problems.},
doi = {10.1063/1.4929512},
journal = {Applied Physics Reviews},
number = 3,
volume = 2,
place = {United States},
year = {2015},
month = {8}
}

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Works referenced in this record:

Electrical phenomena in amorphous oxide films
journal, September 1970


Perovskite Oxides as Resistive Switching Memories: A Review
journal, October 2014


Large resistive-switching phenomena observed in Ag/Si 3 N 4 /Al memory cells
journal, April 2010


Stable Bipolar Resistive Switching Characteristics and Resistive Switching Mechanisms Observed in Aluminum Nitride-based ReRAM Devices
journal, October 2011

  • Kim, Hee-Dong; An, Ho-Myoung; Lee, Eui Bok
  • IEEE Transactions on Electron Devices, Vol. 58, Issue 10
  • DOI: 10.1109/TED.2011.2162518

Phase-change memories
journal, October 2008

  • Lacaita, Andrea L.; Wouters, Dirk J.
  • physica status solidi (a), Vol. 205, Issue 10
  • DOI: 10.1002/pssa.200723561

Cation-based resistance change memory
journal, February 2013


Nonvolatile Memory Elements Based on Organic Materials
journal, June 2007


Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures
journal, July 2011

  • Cho, Byungjin; Song, Sunghun; Ji, Yongsung
  • Advanced Functional Materials, Vol. 21, Issue 15
  • DOI: 10.1002/adfm.201100686

Low‐Frequency Negative Resistance in Thin Anodic Oxide Films
journal, September 1962

  • Hickmott, T. W.
  • Journal of Applied Physics, Vol. 33, Issue 9
  • DOI: 10.1063/1.1702530

Bistable Switching in Niobium Oxide Diodes
journal, March 1965

  • Hiatt, W. R.; Hickmott, T. W.
  • Applied Physics Letters, Vol. 6, Issue 6
  • DOI: 10.1063/1.1754187

Metal-insulator-metal sandwich structures with anomalous properties
journal, January 1976


Possible highT c superconductivity in the Ba?La?Cu?O system
journal, June 1986

  • Bednorz, J. G.; M�ller, K. A.
  • Zeitschrift f�r Physik B Condensed Matter, Vol. 64, Issue 2
  • DOI: 10.1007/BF01303701

Electrodynamics of correlated electron materials
journal, June 2011

  • Basov, D. N.; Averitt, Richard D.; van der Marel, Dirk
  • Reviews of Modern Physics, Vol. 83, Issue 2
  • DOI: 10.1103/RevModPhys.83.471

Cramming More Components Onto Integrated Circuits
journal, January 1998


Moore's law: the future of Si microelectronics
journal, June 2006


Reproducible switching effect in thin oxide films for memory applications
journal, July 2000

  • Beck, A.; Bednorz, J. G.; Gerber, Ch.
  • Applied Physics Letters, Vol. 77, Issue 1
  • DOI: 10.1063/1.126902

Electric-pulse-induced reversible resistance change effect in magnetoresistive films
journal, May 2000

  • Liu, S. Q.; Wu, N. J.; Ignatiev, A.
  • Applied Physics Letters, Vol. 76, Issue 19
  • DOI: 10.1063/1.126464

A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories
journal, January 2007


Electrical observations of filamentary conductions for the resistive memory switching in NiO films
journal, May 2006

  • Kim, D. C.; Seo, S.; Ahn, S. E.
  • Applied Physics Letters, Vol. 88, Issue 20
  • DOI: 10.1063/1.2204649

Observation of electric-field induced Ni filament channels in polycrystalline NiOx film
journal, November 2007

  • Park, Gyeong-Su; Li, Xiang-Shu; Kim, Dong-Chirl
  • Applied Physics Letters, Vol. 91, Issue 22
  • DOI: 10.1063/1.2813617

Conductivity switching characteristics and reset currents in NiO films
journal, February 2005

  • Seo, S.; Lee, M. J.; Seo, D. H.
  • Applied Physics Letters, Vol. 86, Issue 9
  • DOI: 10.1063/1.1872217

Reproducible resistance switching in polycrystalline NiO films
journal, December 2004

  • Seo, S.; Lee, M. J.; Seo, D. H.
  • Applied Physics Letters, Vol. 85, Issue 23
  • DOI: 10.1063/1.1831560

Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory
journal, April 2009

  • Lee, Myoung-Jae; Han, Seungwu; Jeon, Sang Ho
  • Nano Letters, Vol. 9, Issue 4
  • DOI: 10.1021/nl803387q

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
journal, July 2011

  • Lee, Myoung-Jae; Lee, Chang Bum; Lee, Dongsoo
  • Nature Materials, Vol. 10, Issue 8, p. 625-630
  • DOI: 10.1038/nmat3070

Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory
journal, May 2009

  • Lee, Myoung-Jae; Kim, Sun I.; Lee, Chang B.
  • Advanced Functional Materials, Vol. 19, Issue 10
  • DOI: 10.1002/adfm.200801032

Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory
journal, March 2008


Electrode dependence of resistance switching in polycrystalline NiO films
journal, December 2005

  • Seo, S.; Lee, M. J.; Kim, D. C.
  • Applied Physics Letters, Vol. 87, Issue 26
  • DOI: 10.1063/1.2150580

‘Memristive’ switches enable ‘stateful’ logic operations via material implication
journal, April 2010

  • Borghetti, Julien; Snider, Gregory S.; Kuekes, Philip J.
  • Nature, Vol. 464, Issue 7290
  • DOI: 10.1038/nature08940

Direct Identification of the Conducting Channels in a Functioning Memristive Device
journal, June 2010

  • Strachan, John Paul; Pickett, Matthew D.; Yang, J. Joshua
  • Advanced Materials, Vol. 22, Issue 32, p. 3573-3577
  • DOI: 10.1002/adma.201000186

The missing memristor found
journal, May 2008

  • Strukov, Dmitri B.; Snider, Gregory S.; Stewart, Duncan R.
  • Nature, Vol. 453, Issue 7191
  • DOI: 10.1038/nature06932

Memristor−CMOS Hybrid Integrated Circuits for Reconfigurable Logic
journal, October 2009

  • Xia, Qiangfei; Robinett, Warren; Cumbie, Michael W.
  • Nano Letters, Vol. 9, Issue 10
  • DOI: 10.1021/nl901874j

The mechanism of electroforming of metal oxide memristive switches
journal, May 2009


Memristive switching mechanism for metal/oxide/metal nanodevices
journal, June 2008

  • Yang, J. Joshua; Pickett, Matthew D.; Li, Xuema
  • Nature Nanotechnology, Vol. 3, Issue 7
  • DOI: 10.1038/nnano.2008.160

Memristive devices for computing
journal, January 2013

  • Yang, J. Joshua; Strukov, Dmitri B.; Stewart, Duncan R.
  • Nature Nanotechnology, Vol. 8, Issue 1, p. 13-24
  • DOI: 10.1038/nnano.2012.240

A scalable neuristor built with Mott memristors
journal, December 2012

  • Pickett, Matthew D.; Medeiros-Ribeiro, Gilberto; Williams, R. Stanley
  • Nature Materials, Vol. 12, Issue 2
  • DOI: 10.1038/nmat3510

Nanoionics-based resistive switching memories
journal, November 2007

  • Waser, Rainer; Aono, Masakazu
  • Nature Materials, Vol. 6, Issue 11, p. 833-840
  • DOI: 10.1038/nmat2023

Bistable switching in electroformed metal–insulator–metal devices
journal, July 1988


Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
journal, July 2009

  • Waser, Rainer; Dittmann, Regina; Staikov, Georgi
  • Advanced Materials, Vol. 21, Issue 25-26, p. 2632-2663
  • DOI: 10.1002/adma.200900375

Resistive switching in transition metal oxides
journal, June 2008


Resistive non-volatile memory devices (Invited Paper)
journal, July 2009


Adaptive oxide electronics: A review
journal, October 2011

  • Ha, Sieu D.; Ramanathan, Shriram
  • Journal of Applied Physics, Vol. 110, Issue 7
  • DOI: 10.1063/1.3640806

Memory materials: a unifying description
journal, December 2011


Resistive Random Access Memory (ReRAM) Based on Metal Oxides
journal, December 2010


Memory effects in complex materials and nanoscale systems
journal, April 2011


Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
journal, May 2011


Electrochemical metallization memories—fundamentals, applications, prospects
journal, May 2011


Metal–Oxide RRAM
journal, June 2012

  • Wong, H.-S. Philip; Lee, Heng-Yuan; Yu, Shimeng
  • Proceedings of the IEEE, Vol. 100, Issue 6, p. 1951-1970
  • DOI: 10.1109/JPROC.2012.2190369

Emerging memories: resistive switching mechanisms and current status
journal, June 2012


A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View
journal, July 2014

  • Seok, Jun Yeong; Song, Seul Ji; Yoon, Jung Ho
  • Advanced Functional Materials, Vol. 24, Issue 34
  • DOI: 10.1002/adfm.201303520

Nanocrystals for silicon-based light-emitting and memory devices
journal, March 2013


Transition metal oxide thin films for nonvolatile resistive random access memory applications
journal, January 2009


Current Status of Nonvolatile Semiconductor Memory Technology
journal, October 2010


Atomic switches: atomic-movement-controlled nanodevices for new types of computing
journal, February 2011

  • Hino, Takami; Hasegawa, Tsuyoshi; Terabe, Kazuya
  • Science and Technology of Advanced Materials, Vol. 12, Issue 1
  • DOI: 10.1088/1468-6996/12/1/013003

Thermochemical resistive switching: materials, mechanisms, and scaling projections
journal, July 2011


Resistive Switching Phenomena in Complex Oxide Heterostructures
journal, November 2013


Resistive switching memory: observations with scanning probe microscopy
journal, January 2011


Emerging memory technologies: Trends, challenges, and modeling methods
journal, April 2012


Challenges and opportunities for future non-volatile memory technology
journal, March 2011


Resistance switching in oxides with inhomogeneous conductivity
journal, June 2013


Resistive Switching Effect in Titanium Oxides
journal, February 2014

  • Tang, Zhensen; Chi, Yaqing; Fang, Liang
  • Journal of Nanoscience and Nanotechnology, Vol. 14, Issue 2
  • DOI: 10.1166/jnn.2014.9116

Redox-Based Resistive Switching Memories
journal, October 2012


Nanoscale resistive switching devices: mechanisms and modeling
journal, January 2013


Memristor-The missing circuit element
journal, January 1971


Memristive devices and systems
journal, January 1976


Carbon nanotube composites with high dielectric constant at low percolation threshold
journal, July 2005

  • Wang, Lan; Dang, Zhi-Min
  • Applied Physics Letters, Vol. 87, Issue 4
  • DOI: 10.1063/1.1996842

Decrease in switching voltage fluctuation of Pt∕NiOx∕Pt structure by process control
journal, July 2007

  • Jung, Ranju; Lee, Myoung-Jae; Seo, Sunae
  • Applied Physics Letters, Vol. 91, Issue 2
  • DOI: 10.1063/1.2755712

Improvement of resistive memory switching in NiO using IrO2
journal, June 2006

  • Kim, D. C.; Lee, M. J.; Ahn, S. E.
  • Applied Physics Letters, Vol. 88, Issue 23
  • DOI: 10.1063/1.2210087

Predictability of reset switching voltages in unipolar resistance switching
journal, April 2009

  • Lee, S. B.; Chae, S. C.; Chang, S. H.
  • Applied Physics Letters, Vol. 94, Issue 17
  • DOI: 10.1063/1.3126019

Random Circuit Breaker Network Model for Unipolar Resistance Switching
journal, March 2008

  • Chae, Seung Chul; Lee, Jae Sung; Kim, Sejin
  • Advanced Materials, Vol. 20, Issue 6
  • DOI: 10.1002/adma.200702024

Highly Improved Uniformity in the Resistive Switching Parameters of TiO 2 Thin Films by Inserting Ru Nanodots
journal, February 2013

  • Yoon, Jung Ho; Han, Jeong Hwan; Jung, Ji Sim
  • Advanced Materials, Vol. 25, Issue 14
  • DOI: 10.1002/adma.201204572

Improvement of resistive switching memory achieved by using arc-shaped bottom electrode
journal, December 2014

  • Wang, Zhongqiang; Zhao, Kaidong; Xu, Haiyang
  • Applied Physics Express, Vol. 8, Issue 1
  • DOI: 10.7567/APEX.8.014101

Improvement of Resistive Switching in $\hbox{Cu}_{x} \hbox{O}$ Using New RESET Mode
journal, July 2008


Enhanced endurance reliability and low current operation for AlOx/HfOx based unipolar RRAM with Ni electrode
journal, April 2014


Improvement of resistive switching in NiO-based nanowires by inserting Pt layers
journal, October 2012

  • Huang, Yen-Chun; Chen, Po-Yuan; Chin, Tsung-Shune
  • Applied Physics Letters, Vol. 101, Issue 15
  • DOI: 10.1063/1.4758482

Improvement of Resistive Switching Characteristics in $\hbox{SrZrO}_{3}$ Thin Films With Embedded Cr Layer
journal, October 2008

  • Lin, Chih-Yang; Lin, Meng-Han; Wu, Ming-Chi
  • IEEE Electron Device Letters, Vol. 29, Issue 10
  • DOI: 10.1109/LED.2008.2002879

Improved Resistive Switching Dispersion of NiO x Thin Film by Cu-Doping Method
journal, May 2010

  • Liu, Chih-Yi; Lin, Xin-Jie; Wang, Hung-Yu
  • Japanese Journal of Applied Physics, Vol. 49, Issue 5
  • DOI: 10.1143/JJAP.49.056507

Reset Current Reduction with Excellent Filament Controllability by Using Area Minimized and Field Enhanced Unipolar Resistive Random Access Memory Structure
journal, April 2012

  • Ryoo, Kyung-Chang; Oh, Jeong-Hoon; Jung, Sunghun
  • Japanese Journal of Applied Physics, Vol. 51, Issue 4S
  • DOI: 10.7567/JJAP.51.04DD07

$\hbox{HfO}_{x}$ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode
journal, July 2009


MATERIALS SCIENCE: Who Wins the Nonvolatile Memory Race?
journal, March 2008


Universality classes in nonequilibrium lattice systems
journal, August 2004


Percolation models for gate oxide breakdown
journal, November 1999

  • Stathis, J. H.
  • Journal of Applied Physics, Vol. 86, Issue 10
  • DOI: 10.1063/1.371590

1/ f noise in random resistor networks: Fractals and percolating systems
journal, April 1985


Measurement of the fourth moment of the current distribution in two-dimensional random resistor networks
journal, April 1989


ac conduction and 1/f noise in a Cr-film lattice-percolation system
journal, July 1992


Electrical breakdown measurements of semicontinuous metal films
journal, August 1992


Interface-modified random circuit breaker network model applicable to both bipolar and unipolar resistance switching
journal, January 2011

  • Lee, S. B.; Lee, J. S.; Chang, S. H.
  • Applied Physics Letters, Vol. 98, Issue 3
  • DOI: 10.1063/1.3543776

High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application
journal, November 2007

  • Yoshida, Chikako; Tsunoda, Kohji; Noshiro, Hideyuki
  • Applied Physics Letters, Vol. 91, Issue 22
  • DOI: 10.1063/1.2818691

Coexistence of Bipolar and Unipolar Resistive Switching Behaviors in a Pt∕TiO[sub 2]∕Pt Stack
journal, January 2007

  • Jeong, Doo Seok; Schroeder, Herbert; Waser, Rainer
  • Electrochemical and Solid-State Letters, Vol. 10, Issue 8
  • DOI: 10.1149/1.2742989

Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers
journal, January 2010

  • Goux, L.; Lisoni, J. G.; Jurczak, M.
  • Journal of Applied Physics, Vol. 107, Issue 2
  • DOI: 10.1063/1.3275426

Reversible alternation between bipolar and unipolar resistive switching in polycrystalline barium strontium titanate thin films
journal, May 2010

  • Shen, Wan; Dittmann, Regina; Waser, Rainer
  • Journal of Applied Physics, Vol. 107, Issue 9
  • DOI: 10.1063/1.3369285

Resistive switching in a Pt/TiO2/Pt thin film stack – a candidate for a non-volatile ReRAM
journal, September 2007


A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO 2 /Pt structure
journal, May 2011


Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO 2 /Pt cell
journal, April 2012


Effects of heat dissipation on unipolar resistance switching in Pt∕NiO∕Pt capacitors
journal, May 2008

  • Chang, S. H.; Chae, S. C.; Lee, S. B.
  • Applied Physics Letters, Vol. 92, Issue 18
  • DOI: 10.1063/1.2924304

Occurrence of Both Unipolar Memory and Threshold Resistance Switching in a NiO Film
journal, January 2009


Memory and Threshold Resistance Switching in Ni/NiO Core–Shell Nanowires
journal, November 2011

  • He, Li; Liao, Zhi-Min; Wu, Han-Chun
  • Nano Letters, Vol. 11, Issue 11
  • DOI: 10.1021/nl202017k

Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation
journal, June 2012

  • Peng, Hai Yang; Li, Yong Feng; Lin, Wei Nan
  • Scientific Reports, Vol. 2, Issue 1
  • DOI: 10.1038/srep00442

Dielectric breakdown I: A review of oxide breakdown
journal, October 1996


Role of Oxygen Vacancies in Cr-Doped SrTiO3 for Resistance-Change Memory
journal, September 2007


Resistance Switching and Formation of a Conductive Bridge in Metal/Binary Oxide/Metal Structure for Memory Devices
journal, August 2008

  • Fujiwara, Kohei; Nemoto, Takumi; Rozenberg, Marcelo J.
  • Japanese Journal of Applied Physics, Vol. 47, Issue 8
  • DOI: 10.1143/JJAP.47.6266

In situ imaging of the conducting filament in a silicon oxide resistive switch
journal, January 2012

  • Yao, Jun; Zhong, Lin; Natelson, Douglas
  • Scientific Reports, Vol. 2, Issue 1
  • DOI: 10.1038/srep00242

Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories
journal, June 2011

  • Bocquet, Marc; Deleruyelle, Damien; Muller, Christophe
  • Applied Physics Letters, Vol. 98, Issue 26
  • DOI: 10.1063/1.3605591

Resistive-Switching Crossbar Memory Based on Ni-NiO Core-Shell Nanowires
journal, August 2011


Temperature dependence of high- and low-resistance bistable states in polycrystalline NiO films
journal, January 2007

  • Jung, Kyooho; Seo, Hongwoo; Kim, Yongmin
  • Applied Physics Letters, Vol. 90, Issue 5
  • DOI: 10.1063/1.2437668

Filamentary Resistive Switching Localized at Cathode Interface in NiO Thin Films
journal, January 2009

  • Kim, Kyung Min; Choi, Byung Joon; Song, Seul Ji
  • Journal of The Electrochemical Society, Vol. 156, Issue 12
  • DOI: 10.1149/1.3240201

Study of Transport and Dielectric of Resistive Memory States in NiO Thin Film
journal, October 2005

  • Kim, Min Gyu; Kim, Sun Man; Choi, Eun Jip
  • Japanese Journal of Applied Physics, Vol. 44, Issue No. 42
  • DOI: 10.1143/JJAP.44.L1301

Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide
journal, September 2006

  • Kinoshita, K.; Tamura, T.; Aoki, M.
  • Applied Physics Letters, Vol. 89, Issue 10
  • DOI: 10.1063/1.2339032

Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance
journal, July 2008

  • Kinoshita, K.; Tsunoda, K.; Sato, Y.
  • Applied Physics Letters, Vol. 93, Issue 3
  • DOI: 10.1063/1.2959065

Scaling behaviors of reset voltages and currents in unipolar resistance switching
journal, November 2008

  • Lee, S. B.; Chae, S. C.; Chang, S. H.
  • Applied Physics Letters, Vol. 93, Issue 21
  • DOI: 10.1063/1.3036532

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices
journal, February 2009

  • Russo, Ugo; Ielmini, Daniele; Cagli, Carlo
  • IEEE Transactions on Electron Devices, Vol. 56, Issue 2
  • DOI: 10.1109/TED.2008.2010584

Direct observation of conducting filaments on resistive switching of NiO thin films
journal, June 2008

  • Son, J. Y.; Shin, Y. -H.
  • Applied Physics Letters, Vol. 92, Issue 22
  • DOI: 10.1063/1.2931087

Random and localized resistive switching observation in Pt/NiO/Pt
journal, November 2007

  • Yun, Jung-Bin; Kim, Sejin; Seo, Sunae
  • physica status solidi (RRL) – Rapid Research Letters, Vol. 1, Issue 6
  • DOI: 10.1002/pssr.200701205

Multilevel unipolar resistance switching in TiO2 thin films
journal, August 2009

  • Lee, J. S.; Choi, W. S.; Lee, S. B.
  • Applied Physics Letters, Vol. 95, Issue 9
  • DOI: 10.1063/1.3224185

Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films
journal, July 2007

  • Kim, Kyung Min; Choi, Byung Joon; Shin, Yong Cheol
  • Applied Physics Letters, Vol. 91, Issue 1
  • DOI: 10.1063/1.2749846

Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors
journal, March 2012

  • Strukov, Dmitri B.; Alibart, Fabien; Stanley Williams, R.
  • Applied Physics A, Vol. 107, Issue 3
  • DOI: 10.1007/s00339-012-6902-x

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
journal, January 2010

  • Kwon, Deok-Hwang; Kim, Kyung Min; Jang, Jae Hyuck
  • Nature Nanotechnology, Vol. 5, Issue 2
  • DOI: 10.1038/nnano.2009.456

Study on the resistive switching time of TiO2 thin films
journal, July 2006

  • Choi, Byung Joon; Choi, Seol; Kim, Kyung Min
  • Applied Physics Letters, Vol. 89, Issue 1
  • DOI: 10.1063/1.2219726

Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
journal, August 2005

  • Choi, B. J.; Jeong, D. S.; Kim, S. K.
  • Journal of Applied Physics, Vol. 98, Issue 3
  • DOI: 10.1063/1.2001146

Nanoscale resistive switching in SrTiO3 thin films
journal, March 2007

  • Szot, K.; Dittmann, R.; Speier, W.
  • physica status solidi (RRL) – Rapid Research Letters, Vol. 1, Issue 2
  • DOI: 10.1002/pssr.200701003

Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface
journal, November 2004

  • Sawa, A.; Fujii, T.; Kawasaki, M.
  • Applied Physics Letters, Vol. 85, Issue 18
  • DOI: 10.1063/1.1812580

Resistance switching in perovskite thin films
journal, July 2006


Effect of top electrode on resistance switching of (Pr, Ca)MnO3 thin films
journal, December 2006


Interface resistance switching at a few nanometer thick perovskite manganite active layers
journal, June 2006

  • Sawa, A.; Fujii, T.; Kawasaki, M.
  • Applied Physics Letters, Vol. 88, Issue 23
  • DOI: 10.1063/1.2211147

Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode
journal, December 2008

  • Shen, Wan; Dittmann, Regina; Breuer, Uwe
  • Applied Physics Letters, Vol. 93, Issue 22
  • DOI: 10.1063/1.3039809

Nonvolatile resistive switching in metal/La-doped BiFeO 3 /Pt sandwiches
journal, September 2010


Evidence for an Oxygen Diffusion Model for the Electric Pulse Induced Resistance Change Effect in Transition-Metal Oxides
journal, April 2007


Solid-state memories based on ferroelectric tunnel junctions
journal, December 2011

  • Chanthbouala, André; Crassous, Arnaud; Garcia, Vincent
  • Nature Nanotechnology, Vol. 7, Issue 2
  • DOI: 10.1038/nnano.2011.213

A ferroelectric memristor
journal, September 2012

  • Chanthbouala, André; Garcia, Vincent; Cherifi, Ryan O.
  • Nature Materials, Vol. 11, Issue 10
  • DOI: 10.1038/nmat3415

Ferroelectric Tunnel Memristor
journal, October 2012


Electrical current distribution across a metal–insulator–metal structure during bistable switching
journal, September 2001

  • Rossel, C.; Meijer, G. I.; Brémaud, D.
  • Journal of Applied Physics, Vol. 90, Issue 6
  • DOI: 10.1063/1.1389522

Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions
journal, May 2013

  • Wen, Zheng; Li, Chen; Wu, Di
  • Nature Materials, Vol. 12, Issue 7
  • DOI: 10.1038/nmat3649

Resistance switching in polycrystalline BiFeO3 thin films
journal, July 2010

  • Yin, Kuibo; Li, Mi; Liu, Yiwei
  • Applied Physics Letters, Vol. 97, Issue 4
  • DOI: 10.1063/1.3467838

Forming mechanism of the bipolar resistance switching in double-layer memristive nanodevices
journal, July 2012


In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure
journal, September 2013

  • Park, Gyeong-Su; Kim, Young Bae; Park, Seong Yong
  • Nature Communications, Vol. 4, Issue 1
  • DOI: 10.1038/ncomms3382

Modeling for bipolar resistive memory switching in transition-metal oxides
journal, October 2010


Effect of Scaling $\hbox{WO}_{x}$-Based RRAMs on Their Resistive Switching Characteristics
journal, May 2011


Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing
journal, February 2010

  • Shang, D. S.; Shi, L.; Sun, J. R.
  • Applied Physics Letters, Vol. 96, Issue 7
  • DOI: 10.1063/1.3300637

Pt/Ti/Al2O3/Al tunnel junctions exhibiting electroforming-free bipolar resistive switching behavior
journal, September 2011

  • Jeong, Doo Seok; Cheong, Byung-ki; Kohlstedt, Hermann
  • Solid-State Electronics, Vol. 63, Issue 1
  • DOI: 10.1016/j.sse.2011.05.028

Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory
journal, August 2011

  • Chang, Seo Hyoung; Lee, Shin Buhm; Jeon, Dae Young
  • Advanced Materials, Vol. 23, Issue 35, p. 4063-4067
  • DOI: 10.1002/adma.201102395

Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiO x /TiO y /TiO x and Hetero TiO x /TiON/TiO x Triple Multilayer Frameworks
journal, December 2011

  • Bae, Yoon Cheol; Lee, Ah Rahm; Lee, Ja Bin
  • Advanced Functional Materials, Vol. 22, Issue 4
  • DOI: 10.1002/adfm.201102362

Local resistance switching at grain and grain boundary surfaces of polycrystalline tungsten oxide films
journal, May 2011


Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor
journal, November 2011

  • Miao, Feng; Strachan, John Paul; Yang, J. Joshua
  • Advanced Materials, Vol. 23, Issue 47, p. 5633-5640
  • DOI: 10.1002/adma.201103379

Bipolar resistive switching of chromium oxide for resistive random access memory
journal, August 2011

  • Chen, Shih-Cheng; Chang, Ting-Chang; Chen, Shih-Yang
  • Solid-State Electronics, Vol. 62, Issue 1
  • DOI: 10.1016/j.sse.2010.12.014

Electrical Performance and Scalability of Pt Dispersed SiO 2 Nanometallic Resistance Switch
journal, June 2013

  • Choi, Byung Joon; Torrezan, Antonio C.; Norris, Kate J.
  • Nano Letters, Vol. 13, Issue 7
  • DOI: 10.1021/nl401283q

Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM
journal, August 2012

  • Ielmini, Daniele; Nardi, Federico; Balatti, Simone
  • IEEE Transactions on Electron Devices, Vol. 59, Issue 8
  • DOI: 10.1109/TED.2012.2199497

Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications
journal, November 2010

  • Jeong, Hu Young; Kim, Jong Yun; Kim, Jeong Won
  • Nano Letters, Vol. 10, Issue 11
  • DOI: 10.1021/nl101902k

A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory
journal, October 2013

  • Lee, Myoung-Jae; Lee, Dongsoo; Cho, Seong-Ho
  • Nature Communications, Vol. 4, Issue 1
  • DOI: 10.1038/ncomms3629

Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devices
journal, December 2008


Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors
journal, February 2012

  • Miao, Feng; Yi, Wei; Goldfarb, Ilan
  • ACS Nano, Vol. 6, Issue 3, p. 2312-2318
  • DOI: 10.1021/nn2044577

Resistive Switching Behavior and Multiple Transmittance States in Solution-Processed Tungsten Oxide
journal, June 2011

  • Wu, Wei-Ting; Wu, Jih-Jen; Chen, Jen-Sue
  • ACS Applied Materials & Interfaces, Vol. 3, Issue 7
  • DOI: 10.1021/am200430y

Effect of electrode material on the resistance switching of Cu2O film
journal, December 2007

  • Yang, Woo-Young; Rhee, Shi-Woo
  • Applied Physics Letters, Vol. 91, Issue 23
  • DOI: 10.1063/1.2822403

Cause and Prevention of Moisture-Induced Degradation of Resistance Random Access Memory Nanodevices
journal, February 2013

  • Yang, Xiang; Choi, Byung Joon; Chen, Albert B. K.
  • ACS Nano, Vol. 7, Issue 3
  • DOI: 10.1021/nn3054544

Oxide Heterostructure Resistive Memory
journal, May 2013

  • Yang, Yuchao; Choi, ShinHyun; Lu, Wei
  • Nano Letters, Vol. 13, Issue 6
  • DOI: 10.1021/nl401287w

Hysteretic current–voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3∕SrTi0.99Nb0.01O3
journal, January 2005

  • Fujii, T.; Kawasaki, M.; Sawa, A.
  • Applied Physics Letters, Vol. 86, Issue 1
  • DOI: 10.1063/1.1845598

Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals
journal, June 2001

  • Watanabe, Y.; Bednorz, J. G.; Bietsch, A.
  • Applied Physics Letters, Vol. 78, Issue 23
  • DOI: 10.1063/1.1377617

Metal and annealing atmospheres dependence of resistive switching in metal/Nb0.7wt%-SrTiO3 interfaces
journal, July 2013


Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
journal, March 2006

  • Szot, Krzysztof; Speier, Wolfgang; Bihlmayer, Gustav
  • Nature Materials, Vol. 5, Issue 4
  • DOI: 10.1038/nmat1614

Investigation of the electroforming process in resistively switching TiO2 nanocrosspoint junctions
journal, March 2010

  • Nauenheim, C.; Kuegeler, C.; Ruediger, A.
  • Applied Physics Letters, Vol. 96, Issue 12
  • DOI: 10.1063/1.3367752

Separation of bulk and interface contributions to electroforming and resistive switching behavior of epitaxial Fe-doped SrTiO3
journal, March 2009

  • Menke, T.; Meuffels, P.; Dittmann, R.
  • Journal of Applied Physics, Vol. 105, Issue 6
  • DOI: 10.1063/1.3100209

Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices
journal, August 2010

  • Muenstermann, Ruth; Menke, Tobias; Dittmann, Regina
  • Advanced Materials, Vol. 22, Issue 43, p. 4819-4822
  • DOI: 10.1002/adma.201001872

The mechanism of threshold switching in amorphous alloys
journal, April 1978

  • Adler, David; Henisch, Heinz K.; Mott, Sir Nevill
  • Reviews of Modern Physics, Vol. 50, Issue 2
  • DOI: 10.1103/RevModPhys.50.209

Study on Thermochromic VO 2 Films Grown on ZnO-Coated Glass Substrates for “Smart Windows”
journal, October 2003

  • Kato, Kazuhiro; Song, Pung Keun; Odaka, Hidehumi
  • Japanese Journal of Applied Physics, Vol. 42, Issue Part 1, No. 10
  • DOI: 10.1143/JJAP.42.6523

Active Terahertz Nanoantennas Based on VO 2 Phase Transition
journal, June 2010

  • Seo, Minah; Kyoung, Jisoo; Park, Hyeongryeol
  • Nano Letters, Vol. 10, Issue 6
  • DOI: 10.1021/nl1002153

Memory Metamaterials
journal, August 2009


Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory
journal, November 2007


Oxygen vacancies in ZnO
journal, September 2005

  • Janotti, Anderson; Van de Walle, Chris G.
  • Applied Physics Letters, Vol. 87, Issue 12
  • DOI: 10.1063/1.2053360

Electrical and defect thermodynamic properties of nanocrystalline titanium dioxide
journal, January 1999

  • Knauth, P.; Tuller, H. L.
  • Journal of Applied Physics, Vol. 85, Issue 2
  • DOI: 10.1063/1.369208

HPHA Effect on Reversible Resistive Switching of Pt∕Nb-Doped SrTiO[sub 3] Schottky Junction for Nonvolatile Memory Application
journal, January 2007

  • Seong, Dong-jun; Jo, Minseok; Lee, Dongsoo
  • Electrochemical and Solid-State Letters, Vol. 10, Issue 6
  • DOI: 10.1149/1.2718396

Polarity‐dependent memory switching and behavior of Ag dendrite in Ag‐photodoped amorphous As 2 S 3 films
journal, June 1976

  • Hirose, Yooichi; Hirose, Haruo
  • Journal of Applied Physics, Vol. 47, Issue 6
  • DOI: 10.1063/1.322942

Observation of conducting filament growth in nanoscale resistive memories
journal, January 2012

  • Yang, Yuchao; Gao, Peng; Gaba, Siddharth
  • Nature Communications, Vol. 3, Issue 1
  • DOI: 10.1038/ncomms1737

Atomic-scale imaging of nanoengineered oxygen vacancy profiles in SrTiO3
journal, August 2004

  • Muller, David A.; Nakagawa, Naoyuki; Ohtomo, Akira
  • Nature, Vol. 430, Issue 7000
  • DOI: 10.1038/nature02756

Imaging oxygen defects and their motion at a manganite surface
journal, March 2011

  • Bryant, B.; Renner, Ch.; Tokunaga, Y.
  • Nature Communications, Vol. 2, Issue 1
  • DOI: 10.1038/ncomms1219

Surface and Defect Structure of Oxide Nanowires on SrTiO 3
journal, August 2011

  • Marshall, Matthew S. J.; Becerra-Toledo, Andres E.; Marks, Laurence D.
  • Physical Review Letters, Vol. 107, Issue 8
  • DOI: 10.1103/PhysRevLett.107.086102

Oxygen Vacancy: The Invisible Agent on Oxide Surfaces
journal, October 2003


Oxygen-Mediated Diffusion of Oxygen Vacancies on the TiO2(110) Surface
journal, December 2002


Imaging Intrinsic Diffusion of Bridge-Bonded Oxygen Vacancies on TiO 2 ( 110 )
journal, September 2007


Anomalous effect due to oxygen vacancy accumulation below the electrode in bipolar resistance switching Pt/Nb:SrTiO 3 cells
journal, June 2014

  • Lee, Shinbuhm; Lee, Jae Sung; Park, Jong-Bong
  • APL Materials, Vol. 2, Issue 6
  • DOI: 10.1063/1.4884215

Electrocoloration in SrTi O 3 : Vacancy Drift and Oxidation-Reduction of Transition Metals
journal, November 1971


Electrocoloration and oxygen vacancy mobility of BaTiO3
journal, November 2007

  • Yoo, H. -I.; Chang, M. -W.; Oh, T. -S.
  • Journal of Applied Physics, Vol. 102, Issue 9
  • DOI: 10.1063/1.2802290

dc Electrical Degradation of Perovskite-Type Titanates: II, Single Crystals
journal, June 1990


Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers
journal, September 2011

  • Hasegawa, Tsuyoshi; Terabe, Kazuya; Tsuruoka, Tohru
  • Advanced Materials, Vol. 24, Issue 2
  • DOI: 10.1002/adma.201102597

Electrochemical metallization cells—blending nanoionics into nanoelectronics?
journal, February 2012

  • Lu, Wei; Jeong, Doo Seok; Kozicki, Michael
  • MRS Bulletin, Vol. 37, Issue 2
  • DOI: 10.1557/mrs.2012.5

Quantized conductance atomic switch
journal, January 2005


Nanobatteries in redox-based resistive switches require extension of memristor theory
journal, April 2013

  • Valov, I.; Linn, E.; Tappertzhofen, S.
  • Nature Communications, Vol. 4, Issue 1
  • DOI: 10.1038/ncomms2784

Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches
journal, October 2011

  • Tsuruoka, Tohru; Terabe, Kazuya; Hasegawa, Tsuyoshi
  • Advanced Functional Materials, Vol. 22, Issue 1
  • DOI: 10.1002/adfm.201101846

Mechanism for resistive switching in an oxide-based electrochemical metallization memory
journal, February 2012

  • Peng, Shanshan; Zhuge, Fei; Chen, Xinxin
  • Applied Physics Letters, Vol. 100, Issue 7
  • DOI: 10.1063/1.3683523

Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories
journal, February 2009

  • Schindler, C.; Staikov, G.; Waser, R.
  • Applied Physics Letters, Vol. 94, Issue 7
  • DOI: 10.1063/1.3077310

Low current resistive switching in Cu–SiO2 cells
journal, March 2008

  • Schindler, C.; Weides, M.; Kozicki, M. N.
  • Applied Physics Letters, Vol. 92, Issue 12
  • DOI: 10.1063/1.2903707

Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems
journal, September 2007

  • Guo, Xin; Schindler, Christina; Menzel, Stephan
  • Applied Physics Letters, Vol. 91, Issue 13
  • DOI: 10.1063/1.2793686

On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt
journal, December 2008

  • Guan, Weihua; Liu, Ming; Long, Shibing
  • Applied Physics Letters, Vol. 93, Issue 22
  • DOI: 10.1063/1.3039079

Time-dependent current-voltage curves during the forming process in unipolar resistance switching
journal, January 2011

  • Lee, S. B.; Yoo, H. K.; Chang, S. H.
  • Applied Physics Letters, Vol. 98, Issue 5
  • DOI: 10.1063/1.3552676

Two opposite hysteresis curves in semiconductors with mobile dopants
journal, June 2013

  • Sung Lee, Jae; Buhm Lee, Shin; Kahng, Byungnam
  • Applied Physics Letters, Vol. 102, Issue 25
  • DOI: 10.1063/1.4811556

Multiscale simulation on electromigration of the oxygen vacancies in metal oxides
journal, January 2011


Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches
journal, September 2011

  • Menzel, Stephan; Waters, Matthias; Marchewka, Astrid
  • Advanced Functional Materials, Vol. 21, Issue 23
  • DOI: 10.1002/adfm.201101117

Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells
journal, March 2010

  • Schroeder, Herbert; Zhirnov, Victor V.; Cavin, Ralph K.
  • Journal of Applied Physics, Vol. 107, Issue 5
  • DOI: 10.1063/1.3319591

Exponential ionic drift: fast switching and low volatility of thin-film memristors
journal, November 2008


Study of the negative resistance phenomenon in transition metal oxide films from a statistical mechanics point of view
journal, January 2006

  • Jeong, Doo Seok; Choi, Byung Joon; Hwang, Cheol Seong
  • Journal of Applied Physics, Vol. 100, Issue 11
  • DOI: 10.1063/1.2399332

The switching location of a bipolar memristor: chemical, thermal and structural mapping
journal, May 2011


Current-controlled negative differential resistance due to Joule heating in TiO 2
journal, November 2011

  • Alexandrov, A. S.; Bratkovsky, A. M.; Bridle, B.
  • Applied Physics Letters, Vol. 99, Issue 20
  • DOI: 10.1063/1.3660229

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM
journal, March 2012


Molecular dynamics simulations of oxide memristors: thermal effects
journal, February 2011

  • Savel’ev, S. E.; Alexandrov, A. S.; Bratkovsky, A. M.
  • Applied Physics A, Vol. 102, Issue 4
  • DOI: 10.1007/s00339-011-6293-4

Molecular dynamics simulations of oxide memristors: Crystal field effects
journal, August 2011

  • Savel’ev, S. E.; Alexandrov, A. S.; Bratkovsky, A. M.
  • Applied Physics Letters, Vol. 99, Issue 5
  • DOI: 10.1063/1.3622665

Large 1/f noise of unipolar resistance switching and its percolating nature
journal, September 2009

  • Lee, S. B.; Park, S.; Lee, J. S.
  • Applied Physics Letters, Vol. 95, Issue 12
  • DOI: 10.1063/1.3237167

Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications
journal, October 2009

  • Cao, Xun; Li, Xiaomin; Gao, Xiangdong
  • Journal of Applied Physics, Vol. 106, Issue 7
  • DOI: 10.1063/1.3236573

Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
journal, January 2008

  • Chang, Wen-Yuan; Lai, Yen-Chao; Wu, Tai-Bor
  • Applied Physics Letters, Vol. 92, Issue 2
  • DOI: 10.1063/1.2834852

Unipolar resistive switching behavior of BiFeO3 thin films prepared by chemical solution deposition
journal, October 2010


Resistive Switching in Pt∕Al[sub 2]O[sub 3]∕TiO[sub 2]∕Ru Stacked Structures
journal, January 2006

  • Kim, Kyung Min; Choi, Byung Joon; Koo, Bon Wook
  • Electrochemical and Solid-State Letters, Vol. 9, Issue 12
  • DOI: 10.1149/1.2353899

Effects of Ultraviolet Illumination on Resistive Switching Properties of Cu x O Thin Film
journal, August 2010

  • Liu, Chih-Yi; Hsu, Jing-Ming
  • Japanese Journal of Applied Physics, Vol. 49, Issue 8
  • DOI: 10.1143/JJAP.49.084202

Resistive switching characteristics of MnO x -based ReRAM
journal, February 2009


Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories
journal, July 2013

  • Chen, Jui-Yuan; Hsin, Cheng-Lun; Huang, Chun-Wei
  • Nano Letters, Vol. 13, Issue 8
  • DOI: 10.1021/nl4015638

Collective Motion of Conducting Filaments in Pt/n-Type TiO2/p-Type NiO/Pt Stacked Resistance Switching Memory
journal, March 2011

  • Kim, Kyung Min; Song, Seul Ji; Kim, Gun Hwan
  • Advanced Functional Materials, Vol. 21, Issue 9
  • DOI: 10.1002/adfm.201002282

Fractal Dimension of Conducting Paths in Nickel Oxide (NiO) Thin Films During Resistance Switching
journal, March 2010


Scaling Theory for Unipolar Resistance Switching
journal, November 2010


Resistance switching in the metal deficient-type oxides: NiO and CoO
journal, July 2007

  • Shima, Hisashi; Takano, Fumiyoshi; Akinaga, Hiro
  • Applied Physics Letters, Vol. 91, Issue 1
  • DOI: 10.1063/1.2753101

Relations between the concentrations of imperfections in solids
journal, May 1958


Reversible changes between bipolar and unipolar resistance-switching phenomena in a Pt/SrTiOx/Pt cell
journal, November 2012

  • Lee, Shin Buhm; Chang, Seo Hyoung; Yoo, Hyang Keun
  • Current Applied Physics, Vol. 12, Issue 6
  • DOI: 10.1016/j.cap.2012.04.030

The conical shape filament growth model in unipolar resistance switching of TiO2 thin film
journal, March 2009

  • Kim, Kyung Min; Hwang, Cheol Seong
  • Applied Physics Letters, Vol. 94, Issue 12
  • DOI: 10.1063/1.3108088

Dual Conical Conducting Filament Model in Resistance Switching TiO2 Thin Films
journal, January 2015

  • Kim, Kyung Min; Park, Tae Hyung; Hwang, Cheol Seong
  • Scientific Reports, Vol. 5, Issue 1
  • DOI: 10.1038/srep07844

Isothermal Switching and Detailed Filament Evolution in Memristive Systems
journal, April 2014

  • Mickel, Patrick R.; Lohn, Andrew J.; James, Conrad D.
  • Advanced Materials, Vol. 26, Issue 26, p. 4486-4490
  • DOI: 10.1002/adma.201306182

Phenomenological modeling of memristive devices
journal, January 2015


Low voltage two-state-variable memristor model of vacancy-drift resistive switches
journal, February 2015


A physical model of switching dynamics in tantalum oxide memristive devices
journal, June 2013

  • Mickel, Patrick R.; Lohn, Andrew J.; Joon Choi, Byung
  • Applied Physics Letters, Vol. 102, Issue 22, Article No. 223502
  • DOI: 10.1063/1.4809530

Heat Dissipation in Resistive Switching Devices: Comparison of Thermal Simulations and Experimental Results
journal, April 2014

  • Yalon, Eilam; Riess, Ilan; Ritter, Dan
  • IEEE Transactions on Electron Devices, Vol. 61, Issue 4
  • DOI: 10.1109/TED.2014.2305175

A Control Strategy for Parallel Operation of Single-Phase Voltage Source Inverters: Analysis, Design and Experimental Results
journal, June 2013

  • Lazzarin, Telles B.; Bauer, Guilherme A. T.; Barbi, Ivo
  • IEEE Transactions on Industrial Electronics, Vol. 60, Issue 6
  • DOI: 10.1109/TIE.2012.2193856

O-Ti (Oxygen-Titanium)
journal, August 2001


First-principles modeling of resistance switching in perovskite oxide material
journal, July 2006

  • Jeon, Sang Ho; Park, Bae Ho; Lee, Jaichan
  • Applied Physics Letters, Vol. 89, Issue 4
  • DOI: 10.1063/1.2234840

Mechanism for bipolar switching in a Pt / TiO 2 / Pt resistive switching cell
journal, May 2009


Intrinsic Mechanisms of Memristive Switching
journal, May 2011

  • Nagashima, Kazuki; Yanagida, Takeshi; Oka, Keisuke
  • Nano Letters, Vol. 11, Issue 5
  • DOI: 10.1021/nl200707n

Magnetoelectric Devices for Spintronics
journal, July 2014


Ferroelectric tunnel junctions for information storage and processing
journal, July 2014

  • Garcia, Vincent; Bibes, Manuel
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms5289

Lowering the Temperature of Solid Oxide Fuel Cells
journal, November 2011


Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films
journal, April 2009

  • Yang, C. -H.; Seidel, J.; Kim, S. Y.
  • Nature Materials, Vol. 8, Issue 6
  • DOI: 10.1038/nmat2432

An ionic bottle for high-speed, long-retention memristive devices
journal, February 2011


Atomic-Scale Analysis of the Oxygen Configuration at a SrTiO 3 Dislocation Core
journal, November 2005


Localized Metallic Conductivity and Self-Healing during Thermal Reduction of SrTiO 3
journal, February 2002


Atomic and electronic characterization of the a [ 100 ] dislocation core in SrTiO 3
journal, September 2002


Colossal Ionic Conductivity at Interfaces of Epitaxial ZrO2:Y2O3/SrTiO3 Heterostructures
journal, August 2008

  • Garcia-Barriocanal, J.; Rivera-Calzada, A.; Varela, M.
  • Science, Vol. 321, Issue 5889
  • DOI: 10.1126/science.1156393

Electrical Modulation of the Local Conduction at Oxide Tubular Interfaces
journal, September 2013

  • Hsieh, Ying-Hui; Strelcov, Evgheni; Liou, Jia-Ming
  • ACS Nano, Vol. 7, Issue 10
  • DOI: 10.1021/nn402763w

Novel Electroforming-Free Nanoscaffold Memristor with Very High Uniformity, Tunability, and Density
journal, July 2014


Elastic strain at interfaces and its influence on ionic conductivity in nanoscaled solid electrolyte thin films—theoretical considerations and experimental studies
journal, January 2009

  • Schichtel, N.; Korte, C.; Hesse, D.
  • Physical Chemistry Chemical Physics, Vol. 11, Issue 17
  • DOI: 10.1039/b900148d

Vertically aligned nanocomposite electrolytes with superior out-of-plane ionic conductivity for solid oxide fuel cells
journal, November 2013


“Stretching” the energy landscape of oxides—Effects on electrocatalysis and diffusion
journal, February 2014


A Review on Conduction Mechanisms in Dielectric Films
journal, January 2014

  • Chiu, Fu-Chien
  • Advances in Materials Science and Engineering, Vol. 2014
  • DOI: 10.1155/2014/578168

Bipolar Resistance Switching in Transparent ITO/LaAlO 3 /SrTiO 3 Memristors
journal, May 2014

  • Wu, Shuxiang; Ren, Lizhu; Qing, Jian
  • ACS Applied Materials & Interfaces, Vol. 6, Issue 11
  • DOI: 10.1021/am501387w

Modeling of leakage currents in high-κ dielectrics: Three-dimensional approach via kinetic Monte Carlo
journal, February 2010

  • Jegert, Gunther; Kersch, Alfred; Weinreich, Wenke
  • Applied Physics Letters, Vol. 96, Issue 6
  • DOI: 10.1063/1.3310065

Improvement of Resistive Switching Characteristics by Thermally Assisted Forming Process for $\hbox{SiO}_{2}$-Based Structure
journal, February 2013

  • Chen, Yu-Ting; Chang, Ting-Chang; Yang, Po-Chun
  • IEEE Electron Device Letters, Vol. 34, Issue 2
  • DOI: 10.1109/LED.2012.2232276

Resistive switching characteristics and mechanism of thermally grown WO x thin films
journal, September 2011

  • Biju, Kuyyadi P.; Liu, Xinjun; Siddik, Manzar
  • Journal of Applied Physics, Vol. 110, Issue 6
  • DOI: 10.1063/1.3633227

Trap-controlled space-charge-limited current mechanism in resistance switching at Al∕Pr0.7Ca0.3MnO3 interface
journal, June 2008

  • Harada, T.; Ohkubo, I.; Tsubouchi, K.
  • Applied Physics Letters, Vol. 92, Issue 22
  • DOI: 10.1063/1.2938049

Field-induced resistive switching based on space-charge-limited current
journal, January 2007

  • Xia, Yidong; He, Weiye; Chen, Liang
  • Applied Physics Letters, Vol. 90, Issue 2
  • DOI: 10.1063/1.2430912

Conduction Mechanism and Low Frequency Noise Analysis in Al/Pr 0.7 Ca 0.3 MnO 3 for Bipolar Resistive Switching
journal, January 2011

  • Lee, Myoung-Sun; Lee, Jung-Kyu; Hwang, Hyun-Sang
  • Japanese Journal of Applied Physics, Vol. 50, Issue 1R
  • DOI: 10.7567/JJAP.50.011501

Trap-assisted tunneling resistance switching effect in CeO 2 /La 0.7 (Sr 0.1 Ca 0.9 ) 0.3 MnO 3 heterostructure
journal, October 2012

  • Chen, X. G.; Fu, J. B.; Liu, S. Q.
  • Applied Physics Letters, Vol. 101, Issue 15
  • DOI: 10.1063/1.4760221

Conduction mechanism of TiN/HfO x /Pt resistive switching memory: A trap-assisted-tunneling model
journal, August 2011

  • Yu, Shimeng; Guan, Ximeng; Wong, H. -S. Philip
  • Applied Physics Letters, Vol. 99, Issue 6
  • DOI: 10.1063/1.3624472

Bipolar resistive switching based on SrTiO 3 /YBa 2 Cu 3 O 7 epi-layers
journal, December 2012


Carrier Transport and Multilevel Switching Mechanism for Chromium Oxide Resistive Random-Access Memory
journal, January 2011

  • Chen, Shih-Cheng; Chang, Ting-Chang; Chen, Shih-Yang
  • Electrochemical and Solid-State Letters, Vol. 14, Issue 2
  • DOI: 10.1149/1.3518710

Colossal electroresistance of a Pr 0.7 Ca 0.3 Mn O 3 thin film at room temperature
journal, December 2004


Temperature dependence of current-voltage characteristics of Ag–La0.7Ca0.3MnO3–Pt heterostructures
journal, October 2006

  • Shang, D. S.; Chen, L. D.; Wang, Q.
  • Applied Physics Letters, Vol. 89, Issue 17
  • DOI: 10.1063/1.2364055

Bipolar resistive switching behavior of La 0.5 Sr 0.5 CoO 3−σ films for nonvolatile memory applications
journal, June 2014

  • Fu, Y. J.; Xia, F. J.; Jia, Y. L.
  • Applied Physics Letters, Vol. 104, Issue 22
  • DOI: 10.1063/1.4881720

Electrically configurable electroforming and bipolar resistive switching in Pt/TiO 2 /Pt structures
journal, July 2010


Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device
journal, August 2010

  • Chen, C.; Yang, Y. C.; Zeng, F.
  • Applied Physics Letters, Vol. 97, Issue 8
  • DOI: 10.1063/1.3483158

Scaling limits of resistive memories
journal, May 2011


Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere
journal, December 2008

  • Jeong, Doo Seok; Schroeder, Herbert; Breuer, Uwe
  • Journal of Applied Physics, Vol. 104, Issue 12
  • DOI: 10.1063/1.3043879

Nanostructured resistive memory cells based on 8-nm-thin TiO2 films deposited by atomic layer deposition
journal, January 2011

  • Kügeler, C.; Zhang, J.; Hoffmann-Eifert, S.
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 29, Issue 1
  • DOI: 10.1116/1.3536487

Resistive Switching in Single Epitaxial ZnO Nanoislands
journal, January 2012

  • Qi, Jing; Olmedo, Mario; Ren, Jingjian
  • ACS Nano, Vol. 6, Issue 2
  • DOI: 10.1021/nn204809a

A Family of Electronically Reconfigurable Nanodevices
journal, October 2009

  • Yang, J. Joshua; Borghetti, Julien; Murphy, David
  • Advanced Materials, Vol. 21, Issue 37
  • DOI: 10.1002/adma.200900822

Interpretation of set and reset switching in nickel oxide thin films
journal, June 2014

  • Yoo, In Kyeong; Lee, Myoung-Jae; Seo, David H.
  • Applied Physics Letters, Vol. 104, Issue 22
  • DOI: 10.1063/1.4880796

Percolation processes: I. Crystals and mazes
journal, July 1957

  • Broadbent, S. R.; Hammersley, J. M.
  • Mathematical Proceedings of the Cambridge Philosophical Society, Vol. 53, Issue 3
  • DOI: 10.1017/S0305004100032680

Classical Transport in Disordered Media: Scaling and Effective-Medium Theories
journal, December 1971


Breakdown properties of quenched random systems: The random-fuse network
journal, July 1987


A physics/circuit-based switching model for carbon-based resistive memory with sp2/sp3 cluster conversion
journal, January 2012


Abnormal resistance switching behaviours of NiO thin films: possible occurrence of both formation and rupturing of conducting channels
journal, December 2008


Statistical properties of the electrically induced contact resistance between two stainless steel balls
journal, June 2013

  • Kim, Sang-Kuk; Sung Lee, Jae; Kwak, Han
  • Applied Physics Letters, Vol. 102, Issue 24
  • DOI: 10.1063/1.4811354

Dual random circuit breaker network model with equivalent thermal circuit network
journal, January 2014

  • Kim, Kwanyong; Yoon, Seong Jun; Choi, Woo Young
  • Applied Physics Express, Vol. 7, Issue 2
  • DOI: 10.7567/APEX.7.024203

A unified model for unipolar resistive random access memory
journal, February 2012

  • Lee, Kwangseok; Jang, Jung-Shik; Kwon, Yongwoo
  • Applied Physics Letters, Vol. 100, Issue 8
  • DOI: 10.1063/1.3688944


journal, January 2014


Statistical Model and Rapid Prediction of RRAM SET Speed–Disturb Dilemma
journal, November 2013

  • Luo, Wun-Cheng; Liu, Jen-Chieh; Lin, Yen-Chuan
  • IEEE Transactions on Electron Devices, Vol. 60, Issue 11
  • DOI: 10.1109/TED.2013.2281991

Analysis and modeling of resistive switching statistics
journal, April 2012

  • Long, Shibing; Cagli, Carlo; Ielmini, Daniele
  • Journal of Applied Physics, Vol. 111, Issue 7
  • DOI: 10.1063/1.3699369

Evaluation of the lifetime and failure probability for inter-poly oxides from RVS measurements
journal, October 1994


Low-frequency fluctuations in solids: 1 f noise
journal, July 1981


1 f noise and other slow, nonexponential kinetics in condensed matter
journal, April 1988


Nonlinear behavior and 1/ f noise near a conductivity threshold: Effects of local microgeometry
journal, March 1989


Flicker ( 1 f ) Noise in Percolation Networks: A New Hierarchy of Exponents
journal, April 1985


Resistance noise in nonlinear resistor networks
journal, January 1987


Effects of compliance currents on the formation and rupture of conducting filaments in unipolar resistive switching of CoO film
journal, September 2010


Third-harmonic generation in semicontinuous metal films
journal, December 1992


Scaling behaviors for resistive memory switching in NiO nanowire devices
journal, January 2014

  • In Kim, Sung; Ho Sa, Young; Kim, Joo-Hyung
  • Applied Physics Letters, Vol. 104, Issue 2
  • DOI: 10.1063/1.4862751

Structure and growth mechanism of mineral dendrites
journal, October 1991

  • Chopard, B.; Herrmann, H. J.; Vicsek, T.
  • Nature, Vol. 353, Issue 6343
  • DOI: 10.1038/353409a0

Fractal Dimension of Dielectric Breakdown
journal, March 1984


Fractal growth processes
journal, August 1986


Mass transport in chalcogenide electrolyte films – materials and applications
journal, May 2006


Theory of Fractal Growth
journal, August 1988


Simulation of Electric Breakdown and Resulting Variant of Percolation Fractals
journal, March 1985


Diffusion-limited aggregation as branched growth
journal, February 1994


Application of experimental and numerical models to the physics of multiparticle systems
journal, February 1993


Diffusion-Limited Aggregation, a Kinetic Critical Phenomenon
journal, November 1981


Logarithmic voltage anomalies in random resistor networks
journal, September 1987

  • Kahng, B.; Batrouni, G. G.; Redner, S.
  • Journal of Physics A: Mathematical and General, Vol. 20, Issue 13
  • DOI: 10.1088/0305-4470/20/13/004

Threshold Switching and Conductance Quantization in Al/HfO 2 /Si(p) Structures
journal, April 2013

  • Saura, Xavier; Miranda, Enrique; Jiménez, David
  • Japanese Journal of Applied Physics, Vol. 52, Issue 4S
  • DOI: 10.7567/JJAP.52.04CD06

Coexistence of the bipolar and unipolar resistive switching behaviors in vanadium doped ZnO films
journal, January 2014


Coexistence of unipolar and bipolar resistive switching in Pt/NiO/Pt
journal, May 2014

  • Choi, Dooho; Soo Kim, Chang
  • Applied Physics Letters, Vol. 104, Issue 19
  • DOI: 10.1063/1.4875918

Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model
journal, January 2007

  • Sato, Yoshihiro; Kinoshita, Kentaro; Aoki, Masaki
  • Applied Physics Letters, Vol. 90, Issue 3
  • DOI: 10.1063/1.2431792

Resistive Switching Properties of Sol–Gel-Derived V-Doped SrTiO3 Thin Films
journal, April 2013


Coexistence of the bipolar and unipolar resistive switching behaviours in Au/SrTiO 3 /Pt cells
journal, March 2011


Bipolar and unipolar resistive switching in Zn 0.98 Cu 0.02 O films
journal, August 2011


Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices
journal, December 2009

  • Lee, Seunghyup; Kim, Heejin; Yun, Dong-Jin
  • Applied Physics Letters, Vol. 95, Issue 26
  • DOI: 10.1063/1.3280864

Bipolar and unipolar resistive switching modes in Pt/Zn 0.99 Zr 0.01 O/Pt structure for multi-bit resistance random access memory
journal, May 2014

  • Xu, D. L.; Xiong, Y.; Tang, M. H.
  • Applied Physics Letters, Vol. 104, Issue 18
  • DOI: 10.1063/1.4875383

Polarity dependence of forming step on improved performance in Ti/HfOx/W with dual resistive switching mode
journal, December 2013


Self-Selection Unipolar $\hbox{HfO}_{x}$ -Based RRAM
journal, January 2013

  • Tran, X. A.; Zhu, W.; Liu, W. J.
  • IEEE Transactions on Electron Devices, Vol. 60, Issue 1
  • DOI: 10.1109/TED.2012.2223821

Coexistence of Bipolar and Unipolar Switching of Cu and Oxygen Vacancy Nanofilaments in Cu/TaOx/Pt Resistive Devices
journal, January 2012

  • Liu, T.; Verma, M.; Kang, Y.
  • ECS Solid State Letters, Vol. 1, Issue 1
  • DOI: 10.1149/2.012201ssl

Coexistence of unipolar and bipolar resistive switching in BiFeO 3 and Bi 0.8 Ca 0.2 FeO 3 films
journal, May 2012

  • Liu, Lu; Zhang, Shantao; Luo, Ying
  • Journal of Applied Physics, Vol. 111, Issue 10
  • DOI: 10.1063/1.4716867

Nonvolatile Memory with Multilevel Switching: A Basic Model
journal, April 2004


Conversion from unipolar to bipolar resistance switching by inserting Ta2O5 layer in Pt/TaOx/Pt cells
journal, May 2011

  • Yoo, H. K.; Lee, S. B.; Lee, J. S.
  • Applied Physics Letters, Vol. 98, Issue 18
  • DOI: 10.1063/1.3587809

Origin of the OFF state variability in ReRAM cells
journal, March 2014


Understanding of the Switching Mechanism of a Pt/Ni-Doped SrTiO 3 Junction via Current–Voltage and Capacitance–Voltage Measurements
journal, December 2008

  • Seong, Dong-jun; Lee, Dongsoo; Pyun, Myungbum
  • Japanese Journal of Applied Physics, Vol. 47, Issue 12
  • DOI: 10.1143/JJAP.47.8749

Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behaviour
journal, March 2014

  • Aoki, Yoshitaka; Wiemann, Carsten; Feyer, Vitaliy
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms4473

Impact of Defect Distribution on Resistive Switching Characteristics of Sr2TiO4 Thin Films
journal, January 2010

  • Shibuya, Keisuke; Dittmann, Regina; Mi, Shaobo
  • Advanced Materials, Vol. 22, Issue 3, p. 411-414
  • DOI: 10.1002/adma.200901493

Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells
journal, January 2011


Observation of two resistance switching modes in TiO 2 memristive devices electroformed at low current
journal, May 2011


Device scaling limits of Si MOSFETs and their application dependencies
journal, March 2001

  • Frank, D. J.; Dennard, R. H.; Nowak, E.
  • Proceedings of the IEEE, Vol. 89, Issue 3
  • DOI: 10.1109/5.915374

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
journal, September 2014


Complementary resistive switches for passive nanocrossbar memories
journal, April 2010

  • Linn, Eike; Rosezin, Roland; Kügeler, Carsten
  • Nature Materials, Vol. 9, Issue 5
  • DOI: 10.1038/nmat2748

Bottom Electrode Modification of ZrO 2 Resistive Switching Memory Device with Au Nanodots
journal, February 2012

  • Lee, Dai-Ying; Yao, I-Chuan; Tseng, Tseung-Yuen
  • Japanese Journal of Applied Physics, Vol. 51, Issue 2S
  • DOI: 10.7567/JJAP.51.02BJ04

Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications
journal, October 2010

  • Lee, Joonmyoung; Bourim, El Mostafa; Lee, Wootae
  • Applied Physics Letters, Vol. 97, Issue 17
  • DOI: 10.1063/1.3491803

Highly uniform and reliable resistance switching properties in bilayer WOx/NbOx RRAM devices
journal, March 2012

  • Sadaf, Sharif Md.; Liu, Xinjun; Son, Myungwoo
  • physica status solidi (a), Vol. 209, Issue 6
  • DOI: 10.1002/pssa.201127659

Resistive switching and data reliability of epitaxial (Ba,Sr)TiO3 thin films
journal, January 2006

  • Oligschlaeger, R.; Waser, R.; Meyer, R.
  • Applied Physics Letters, Vol. 88, Issue 4
  • DOI: 10.1063/1.2162860

High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm
journal, January 2012


Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory
journal, July 2014

  • Bai, Yue; Wu, Huaqiang; Wu, Riga
  • Scientific Reports, Vol. 4, Issue 1
  • DOI: 10.1038/srep05780

Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament
journal, January 2013

  • Balatti, S.; Larentis, S.; Gilmer, D. C.
  • Advanced Materials, Vol. 25, Issue 10, p. 1474-1478
  • DOI: 10.1002/adma.201204097

Multilevel Resistive Switching in Planar Graphene/SiO 2 Nanogap Structures
journal, April 2012

  • He, Congli; Shi, Zhiwen; Zhang, Lianchang
  • ACS Nano, Vol. 6, Issue 5
  • DOI: 10.1021/nn300735s

Using binary resistors to achieve multilevel resistive switching in multilayer NiO/Pt nanowire arrays
journal, February 2014

  • Huang, Yen-Chun; Chen, Po-Yuan; Huang, Kuo-Feng
  • NPG Asia Materials, Vol. 6, Issue 2
  • DOI: 10.1038/am.2013.81

Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory
journal, March 2011

  • Yu, Shimeng; Wu, Yi; Wong, H. -S. Philip
  • Applied Physics Letters, Vol. 98, Issue 10
  • DOI: 10.1063/1.3564883

Investigation for Resistive Switching by Controlling Overflow Current in Resistance Change Nonvolatile Memory
journal, November 2012

  • Ahn, Seung-Eon; Lee, Myoung-Jae; Kang, Bo Soo
  • IEEE Transactions on Nanotechnology, Vol. 11, Issue 6
  • DOI: 10.1109/TNANO.2012.2214788

A Defect-Tolerant Computer Architecture: Opportunities for Nanotechnology
journal, June 1998


The crossbar latch: Logic value storage, restoration, and inversion in crossbar circuits
journal, February 2005

  • Kuekes, Philip J.; Stewart, Duncan R.; Williams, R. Stanley
  • Journal of Applied Physics, Vol. 97, Issue 3
  • DOI: 10.1063/1.1823026

Nanoelectronics from the bottom up
journal, November 2007

  • Lu, Wei; Lieber, Charles M.
  • Nature Materials, Vol. 6, Issue 11
  • DOI: 10.1038/nmat2028

Behavior Characteristics of Nano-Stage According to Hinge Structure
journal, November 2007

  • Oh, Hyun-Seong; Lee, Sung-Jun; Kim, Yong-Woo
  • Journal of Nanoscience and Nanotechnology, Vol. 7, Issue 11
  • DOI: 10.1166/jnn.2007.013

Engineering nonlinearity into memristors for passive crossbar applications
journal, March 2012

  • Joshua Yang, J.; Zhang, M.-X.; Pickett, Matthew D.
  • Applied Physics Letters, Vol. 100, Issue 11, Article No. 113501
  • DOI: 10.1063/1.3693392

High-Density Crossbar Arrays Based on a Si Memristive System
journal, February 2009

  • Jo, Sung Hyun; Kim, Kuk-Hwan; Lu, Wei
  • Nano Letters, Vol. 9, Issue 2
  • DOI: 10.1021/nl8037689

A Pt/TiO 2 /Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays
journal, April 2010


RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study
journal, February 2013

  • Deng, Yexin; Huang, Peng; Chen, Bing
  • IEEE Transactions on Electron Devices, Vol. 60, Issue 2
  • DOI: 10.1109/TED.2012.2231683

Crossbar RRAM Arrays: Selector Device Requirements During Read Operation
journal, May 2014


Diode-less bilayer oxide (WO x –NbO x ) device for cross-point resistive memory applications
journal, November 2011


Self-Selective Characteristics of Nanoscale $ \hbox{VO}_{x}$ Devices for High-Density ReRAM Applications
journal, May 2012

  • Son, Myungwoo; Liu, Xinjun; Sadaf, Sharif Md.
  • IEEE Electron Device Letters, Vol. 33, Issue 5
  • DOI: 10.1109/LED.2012.2188989

Resistive Switches and Memories from Silicon Oxide
journal, October 2010

  • Yao, Jun; Sun, Zhengzong; Zhong, Lin
  • Nano Letters, Vol. 10, Issue 10
  • DOI: 10.1021/nl102255r

Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$
journal, May 2008


Spatial Redistribution of Oxygen Ions in Oxide Resistance Switching Device after Forming Process
journal, June 2010

  • Yajima, Takeshi; Fujiwara, Kohei; Nakao, Aiko
  • Japanese Journal of Applied Physics, Vol. 49, Issue 6
  • DOI: 10.1143/JJAP.49.060215

Resistance Switching in Electroformed Pt/FeO x/Pt Structures
journal, October 2007

  • Lee, S. B.; Chae, S. C.; Chang, S. H.
  • Journal of the Korean Physical Society, Vol. 51, Issue 12
  • DOI: 10.3938/jkps.51.96

32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory
journal, October 2012

  • Kim, Gun Hwan; Lee, Jong Ho; Ahn, Youngbae
  • Advanced Functional Materials, Vol. 23, Issue 11
  • DOI: 10.1002/adfm.201202170

The resistive switching characteristics of a Ti/Gd2O3/Pt RRAM device
journal, May 2010


Synthesis and Characterization of Pt/Co–O/Pt Trilayer Exhibiting Large Reproducible Resistance Switching
journal, January 2007

  • Shima, Hisashi; Takano, Fumiyoshi; Tamai, Yukio
  • Japanese Journal of Applied Physics, Vol. 46, Issue No. 3
  • DOI: 10.1143/JJAP.46.L57

Bipolar and Unipolar Resistive Switching in Cu-Doped $ \hbox{SiO}_{2}$
journal, October 2007

  • Schindler, Christina; Thermadam, Sarath Chandran Puthen; Waser, Rainer
  • IEEE Transactions on Electron Devices, Vol. 54, Issue 10
  • DOI: 10.1109/TED.2007.904402

    Works referencing / citing this record:

    A Precise Algorithm of Memristor Switching to a State with Preset Resistance
    journal, May 2018