Resistive switching phenomena: A review of statistical physics approaches
Abstract
Here we report that resistive switching (RS) phenomena are reversible changes in the metastable resistance state induced by external electric fields. After discovery ~50 years ago, RS phenomena have attracted great attention due to their potential application in next-generation electrical devices. Considerable research has been performed to understand the physical mechanisms of RS and explore the feasibility and limits of such devices. There have also been several reviews on RS that attempt to explain the microscopic origins of how regions that were originally insulators can change into conductors. However, little attention has been paid to the most important factor in determining resistance: how conducting local regions are interconnected. Here, we provide an overview of the underlying physics behind connectivity changes in highly conductive regions under an electric field. We first classify RS phenomena according to their characteristic current–voltage curves: unipolar, bipolar, and threshold switchings. Second, we outline the microscopic origins of RS in oxides, focusing on the roles of oxygen vacancies: the effect of concentration, the mechanisms of channel formation and rupture, and the driving forces of oxygen vacancies. Third, we review RS studies from the perspective of statistical physics to understand connectivity change in RS phenomena. We discuss percolationmore »
- Authors:
-
- Korea Inst. for Advanced Study, Seoul (South Korea). School of Physics
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
- Center for Correlated Electron Systems, Seoul (South Korea) ; Seoul National Univ. (Korea, Republic of)
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1263835
- Alternate Identifier(s):
- OSTI ID: 1229652
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Reviews
- Additional Journal Information:
- Journal Volume: 2; Journal Issue: 3; Journal ID: ISSN 1931-9401
- Publisher:
- American Institute of Physics
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE
Citation Formats
Lee, Jae Sung, Lee, Shinbuhm, and Noh, Tae Won. Resistive switching phenomena: A review of statistical physics approaches. United States: N. p., 2015.
Web. doi:10.1063/1.4929512.
Lee, Jae Sung, Lee, Shinbuhm, & Noh, Tae Won. Resistive switching phenomena: A review of statistical physics approaches. United States. https://doi.org/10.1063/1.4929512
Lee, Jae Sung, Lee, Shinbuhm, and Noh, Tae Won. Mon .
"Resistive switching phenomena: A review of statistical physics approaches". United States. https://doi.org/10.1063/1.4929512. https://www.osti.gov/servlets/purl/1263835.
@article{osti_1263835,
title = {Resistive switching phenomena: A review of statistical physics approaches},
author = {Lee, Jae Sung and Lee, Shinbuhm and Noh, Tae Won},
abstractNote = {Here we report that resistive switching (RS) phenomena are reversible changes in the metastable resistance state induced by external electric fields. After discovery ~50 years ago, RS phenomena have attracted great attention due to their potential application in next-generation electrical devices. Considerable research has been performed to understand the physical mechanisms of RS and explore the feasibility and limits of such devices. There have also been several reviews on RS that attempt to explain the microscopic origins of how regions that were originally insulators can change into conductors. However, little attention has been paid to the most important factor in determining resistance: how conducting local regions are interconnected. Here, we provide an overview of the underlying physics behind connectivity changes in highly conductive regions under an electric field. We first classify RS phenomena according to their characteristic current–voltage curves: unipolar, bipolar, and threshold switchings. Second, we outline the microscopic origins of RS in oxides, focusing on the roles of oxygen vacancies: the effect of concentration, the mechanisms of channel formation and rupture, and the driving forces of oxygen vacancies. Third, we review RS studies from the perspective of statistical physics to understand connectivity change in RS phenomena. We discuss percolation model approaches and the theory for the scaling behaviors of numerous transport properties observed in RS. Fourth, we review various switching-type conversion phenomena in RS: bipolar-unipolar, memory-threshold, figure-of-eight, and counter-figure-of-eight conversions. Finally, we review several related technological issues, such as improvement in high resistance fluctuations, sneak-path problems, and multilevel switching problems.},
doi = {10.1063/1.4929512},
journal = {Applied Physics Reviews},
number = 3,
volume = 2,
place = {United States},
year = {Mon Aug 31 00:00:00 EDT 2015},
month = {Mon Aug 31 00:00:00 EDT 2015}
}
Web of Science
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- Beilliard, Yann; Paquette, François; Brousseau, Frédéric
- AIP Advances, Vol. 10, Issue 2
Self-adaptive STDP-based learning of a spiking neuron with nanocomposite memristive weights
journal, October 2019
- Emelyanov, A. V.; Nikiruy, K. E.; Serenko, A. V.
- Nanotechnology, Vol. 31, Issue 4
Resistive switching in reactive electrode-based memristor: engineering bulk defects and interface inhomogeneity through bias characteristics
journal, February 2019
- Kumar, Amitesh; Das, Mangal; Sharma, Pankaj
- Semiconductor Science and Technology, Vol. 34, Issue 3
Current-induced magnetization switching using an electrically insulating spin-torque generator
journal, February 2018
- An, Hongyu; Ohno, Takeo; Kanno, Yusuke
- Science Advances, Vol. 4, Issue 2
Transport, Magnetic, and Memristive Properties of a Nanogranular (CoFeB) x (LiNbO y )100–x Composite Material
journal, March 2018
- Rylkov, V. V.; Nikolaev, S. N.; Demin, V. A.
- Journal of Experimental and Theoretical Physics, Vol. 126, Issue 3
A Highly Transparent Artificial Photonic Nociceptor
journal, March 2019
- Kumar, Mohit; Kim, Hong‐Sik; Kim, Joondong
- Advanced Materials, Vol. 31, Issue 19
Detection of bovine serum albumin using hybrid TiO2 + graphene oxide based Bio – resistive random access memory device
journal, November 2019
- Sahu, Dwipak Prasad; Jammalamadaka, S. Narayana
- Scientific Reports, Vol. 9, Issue 1
Controllable digital resistive switching for artificial synapses and pavlovian learning algorithm
journal, January 2019
- Kumar, Mohit; Abbas, Sohail; Lee, Jung-Ho
- Nanoscale, Vol. 11, Issue 33
Hole-alleviated trap transport in dielectrics
journal, March 2018
- Novikov, Yu. N.
- Journal of Applied Physics, Vol. 123, Issue 12
Resistive switching control for conductive Si-nanocrystals embedded in Si/SiO 2 multilayers
journal, July 2018
- González–Flores, K. E.; Palacios-Márquez, B.; Álvarez–Quintana, J.
- Nanotechnology, Vol. 29, Issue 39
Atomic-Force Microscopy of Resistive Nonstationary Signal Switching in ZrO2(Y) Films
journal, November 2019
- Filatov, D. O.; Koryazhkina, M. N.; Antonov, D. A.
- Technical Physics, Vol. 64, Issue 11
Large-area plastic nanogap electronics enabled by adhesion lithography
journal, June 2018
- Semple, James; Georgiadou, Dimitra G.; Wyatt-Moon, Gwenhivir
- npj Flexible Electronics, Vol. 2, Issue 1
Electrically controlled water permeation through graphene oxide membranes
journal, July 2018
- Zhou, K. -G.; Vasu, K. S.; Cherian, C. T.
- Nature, Vol. 559, Issue 7713
Using a mixed ionic electronic conductor to build an analog memristive device with neuromorphic programming capabilities
journal, January 2020
- Maas, Klaasjan; Villepreux, Edouard; Cooper, David
- Journal of Materials Chemistry C, Vol. 8, Issue 2
Memristive Properties of Structures Based on (Co41Fe39B20) x (LiNbO3)100–x Nanocomposites
journal, May 2018
- Levanov, V. A.; Emel’yanov, A. V.; Demin, V. A.
- Journal of Communications Technology and Electronics, Vol. 63, Issue 5
High‐Performance Solution‐Processed Organo‐Metal Halide Perovskite Unipolar Resistive Memory Devices in a Cross‐Bar Array Structure
journal, April 2019
- Kang, Keehoon; Ahn, Heebeom; Song, Younggul
- Advanced Materials, Vol. 31, Issue 21
Interface-type resistive switching in perovskite materials
journal, May 2017
- Bagdzevicius, S.; Maas, K.; Boudard, M.
- Journal of Electroceramics, Vol. 39, Issue 1-4
A Collective Study on Modeling and Simulation of Resistive Random Access Memory
journal, January 2018
- Panda, Debashis; Sahu, Paritosh Piyush; Tseng, Tseung Yuen
- Nanoscale Research Letters, Vol. 13, Issue 1
A Precise Algorithm of Memristor Switching to a State with Preset Resistance
journal, May 2018
- Nikiruy, K. E.; Emelyanov, A. V.; Demin, V. A.
- Technical Physics Letters, Vol. 44, Issue 5
Towards In-Situ Electron Microscopy Studies of Flash Sintering
journal, July 2019
- Schwarzbach, Danny; Gonzalez-Julian, Jesus; Guillon, Olivier
- Ceramics, Vol. 2, Issue 3
An efficient Verilog-A memristor model implementation: simulation and application
journal, June 2019
- Rziga, Faten Ouaja; Mbarek, Khaoula; Ghedira, Sami
- Journal of Computational Electronics, Vol. 18, Issue 3
Remote control of resistive switching in TiO2 based resistive random access memory device
journal, December 2017
- Sahu, Dwipak Prasad; Jammalamadaka, S. Narayana
- Scientific Reports, Vol. 7, Issue 1
Memristor effect in GeO[SiO 2 ] and GeO[SiO] solid alloys films
journal, June 2019
- Volodin, V. A.; Kamaev, G. N.; Gritsenko, V. A.
- Applied Physics Letters, Vol. 114, Issue 23
Characterization of oxygen vacancies in SrTiO 3 by means of anelastic and Raman spectroscopy
journal, October 2019
- Chapron, David; Cordero, Francesco; Fontana, Marc D.
- Journal of Applied Physics, Vol. 126, Issue 15
The nanocoherer: an electrically and mechanically resettable resistive switching device based on gold clusters assembled on paper
journal, March 2018
- Minnai, Chloé; Mirigliano, Matteo; Brown, Simon A.
- Nano Futures, Vol. 2, Issue 1
Electric-field-induced insulator to Coulomb glass transition via oxygen-vacancy migration in Ca-doped
journal, July 2016
- Lim, Ji Soo; Lee, Jin Hong; Ikeda-Ohno, Atsushi
- Physical Review B, Vol. 94, Issue 3
Remote control of resistive switching in TiO2 based resistive random access memory device
journal, December 2017
- Sahu, Dwipak Prasad; Jammalamadaka, S. Narayana
- Scientific Reports, Vol. 7, Issue 1
Detection of bovine serum albumin using hybrid TiO2 + graphene oxide based Bio – resistive random access memory device
journal, November 2019
- Sahu, Dwipak Prasad; Jammalamadaka, S. Narayana
- Scientific Reports, Vol. 9, Issue 1
A Collective Study on Modeling and Simulation of Resistive Random Access Memory
journal, January 2018
- Panda, Debashis; Sahu, Paritosh Piyush; Tseng, Tseung Yuen
- Nanoscale Research Letters, Vol. 13, Issue 1