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Title: Resistive switching phenomena: A review of statistical physics approaches

Abstract

Here we report that resistive switching (RS) phenomena are reversible changes in the metastable resistance state induced by external electric fields. After discovery ~50 years ago, RS phenomena have attracted great attention due to their potential application in next-generation electrical devices. Considerable research has been performed to understand the physical mechanisms of RS and explore the feasibility and limits of such devices. There have also been several reviews on RS that attempt to explain the microscopic origins of how regions that were originally insulators can change into conductors. However, little attention has been paid to the most important factor in determining resistance: how conducting local regions are interconnected. Here, we provide an overview of the underlying physics behind connectivity changes in highly conductive regions under an electric field. We first classify RS phenomena according to their characteristic current–voltage curves: unipolar, bipolar, and threshold switchings. Second, we outline the microscopic origins of RS in oxides, focusing on the roles of oxygen vacancies: the effect of concentration, the mechanisms of channel formation and rupture, and the driving forces of oxygen vacancies. Third, we review RS studies from the perspective of statistical physics to understand connectivity change in RS phenomena. We discuss percolationmore » model approaches and the theory for the scaling behaviors of numerous transport properties observed in RS. Fourth, we review various switching-type conversion phenomena in RS: bipolar-unipolar, memory-threshold, figure-of-eight, and counter-figure-of-eight conversions. Finally, we review several related technological issues, such as improvement in high resistance fluctuations, sneak-path problems, and multilevel switching problems.« less

Authors:
 [1];  [2];  [3]
  1. Korea Inst. for Advanced Study, Seoul (South Korea). School of Physics
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
  3. Center for Correlated Electron Systems, Seoul (South Korea) ; Seoul National Univ. (Korea, Republic of)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1263835
Alternate Identifier(s):
OSTI ID: 1229652
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Reviews
Additional Journal Information:
Journal Volume: 2; Journal Issue: 3; Journal ID: ISSN 1931-9401
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE

Citation Formats

Lee, Jae Sung, Lee, Shinbuhm, and Noh, Tae Won. Resistive switching phenomena: A review of statistical physics approaches. United States: N. p., 2015. Web. doi:10.1063/1.4929512.
Lee, Jae Sung, Lee, Shinbuhm, & Noh, Tae Won. Resistive switching phenomena: A review of statistical physics approaches. United States. https://doi.org/10.1063/1.4929512
Lee, Jae Sung, Lee, Shinbuhm, and Noh, Tae Won. Mon . "Resistive switching phenomena: A review of statistical physics approaches". United States. https://doi.org/10.1063/1.4929512. https://www.osti.gov/servlets/purl/1263835.
@article{osti_1263835,
title = {Resistive switching phenomena: A review of statistical physics approaches},
author = {Lee, Jae Sung and Lee, Shinbuhm and Noh, Tae Won},
abstractNote = {Here we report that resistive switching (RS) phenomena are reversible changes in the metastable resistance state induced by external electric fields. After discovery ~50 years ago, RS phenomena have attracted great attention due to their potential application in next-generation electrical devices. Considerable research has been performed to understand the physical mechanisms of RS and explore the feasibility and limits of such devices. There have also been several reviews on RS that attempt to explain the microscopic origins of how regions that were originally insulators can change into conductors. However, little attention has been paid to the most important factor in determining resistance: how conducting local regions are interconnected. Here, we provide an overview of the underlying physics behind connectivity changes in highly conductive regions under an electric field. We first classify RS phenomena according to their characteristic current–voltage curves: unipolar, bipolar, and threshold switchings. Second, we outline the microscopic origins of RS in oxides, focusing on the roles of oxygen vacancies: the effect of concentration, the mechanisms of channel formation and rupture, and the driving forces of oxygen vacancies. Third, we review RS studies from the perspective of statistical physics to understand connectivity change in RS phenomena. We discuss percolation model approaches and the theory for the scaling behaviors of numerous transport properties observed in RS. Fourth, we review various switching-type conversion phenomena in RS: bipolar-unipolar, memory-threshold, figure-of-eight, and counter-figure-of-eight conversions. Finally, we review several related technological issues, such as improvement in high resistance fluctuations, sneak-path problems, and multilevel switching problems.},
doi = {10.1063/1.4929512},
journal = {Applied Physics Reviews},
number = 3,
volume = 2,
place = {United States},
year = {Mon Aug 31 00:00:00 EDT 2015},
month = {Mon Aug 31 00:00:00 EDT 2015}
}

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journal, June 2018

  • Semple, James; Georgiadou, Dimitra G.; Wyatt-Moon, Gwenhivir
  • npj Flexible Electronics, Vol. 2, Issue 1
  • DOI: 10.1038/s41528-018-0031-3

Electrically controlled water permeation through graphene oxide membranes
journal, July 2018


Using a mixed ionic electronic conductor to build an analog memristive device with neuromorphic programming capabilities
journal, January 2020

  • Maas, Klaasjan; Villepreux, Edouard; Cooper, David
  • Journal of Materials Chemistry C, Vol. 8, Issue 2
  • DOI: 10.1039/c9tc03972d

Memristive Properties of Structures Based on (Co41Fe39B20) x (LiNbO3)100–x Nanocomposites
journal, May 2018

  • Levanov, V. A.; Emel’yanov, A. V.; Demin, V. A.
  • Journal of Communications Technology and Electronics, Vol. 63, Issue 5
  • DOI: 10.1134/s1064226918050078

High‐Performance Solution‐Processed Organo‐Metal Halide Perovskite Unipolar Resistive Memory Devices in a Cross‐Bar Array Structure
journal, April 2019

  • Kang, Keehoon; Ahn, Heebeom; Song, Younggul
  • Advanced Materials, Vol. 31, Issue 21
  • DOI: 10.1002/adma.201804841

Interface-type resistive switching in perovskite materials
journal, May 2017


A Collective Study on Modeling and Simulation of Resistive Random Access Memory
journal, January 2018

  • Panda, Debashis; Sahu, Paritosh Piyush; Tseng, Tseung Yuen
  • Nanoscale Research Letters, Vol. 13, Issue 1
  • DOI: 10.1186/s11671-017-2419-8

A Precise Algorithm of Memristor Switching to a State with Preset Resistance
journal, May 2018


Towards In-Situ Electron Microscopy Studies of Flash Sintering
journal, July 2019

  • Schwarzbach, Danny; Gonzalez-Julian, Jesus; Guillon, Olivier
  • Ceramics, Vol. 2, Issue 3
  • DOI: 10.3390/ceramics2030036

An efficient Verilog-A memristor model implementation: simulation and application
journal, June 2019

  • Rziga, Faten Ouaja; Mbarek, Khaoula; Ghedira, Sami
  • Journal of Computational Electronics, Vol. 18, Issue 3
  • DOI: 10.1007/s10825-019-01357-9

Remote control of resistive switching in TiO2 based resistive random access memory device
journal, December 2017


Memristor effect in GeO[SiO 2 ] and GeO[SiO] solid alloys films
journal, June 2019

  • Volodin, V. A.; Kamaev, G. N.; Gritsenko, V. A.
  • Applied Physics Letters, Vol. 114, Issue 23
  • DOI: 10.1063/1.5079690

Characterization of oxygen vacancies in SrTiO 3 by means of anelastic and Raman spectroscopy
journal, October 2019

  • Chapron, David; Cordero, Francesco; Fontana, Marc D.
  • Journal of Applied Physics, Vol. 126, Issue 15
  • DOI: 10.1063/1.5115106

The nanocoherer: an electrically and mechanically resettable resistive switching device based on gold clusters assembled on paper
journal, March 2018


Electric-field-induced insulator to Coulomb glass transition via oxygen-vacancy migration in Ca-doped BiFe O 3
journal, July 2016


Remote control of resistive switching in TiO2 based resistive random access memory device
journal, December 2017


Detection of bovine serum albumin using hybrid TiO2 + graphene oxide based Bio – resistive random access memory device
journal, November 2019


A Collective Study on Modeling and Simulation of Resistive Random Access Memory
journal, January 2018

  • Panda, Debashis; Sahu, Paritosh Piyush; Tseng, Tseung Yuen
  • Nanoscale Research Letters, Vol. 13, Issue 1
  • DOI: 10.1186/s11671-017-2419-8