skip to main content

DOE PAGESDOE PAGES

Title: Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs

Our paper presents a comprehensive short-circuit ruggedness evaluation and numerical investigation of up-to-date commercial silicon carbide (SiC) MOSFETs. The short-circuit capability of three types of commercial 1200-V SiC MOSFETs is tested under various conditions, with case temperatures from 25 to 200 degrees C and dc bus voltages from 400 to 750 V. It is found that the commercial SiC MOSFETs can withstand short-circuit current for only several microseconds with a dc bus voltage of 750 V and case temperature of 200 degrees C. Moreover, the experimental short-circuit behaviors are compared, and analyzed through numerical thermal dynamic simulation. Specifically, an electrothermal model is built to estimate the device internal temperature distribution, considering the temperature-dependent thermal properties of SiC material. Based on the temperature information, a leakage current model is derived to calculate the main leakage current components (i.e., thermal, diffusion, and avalanche generation currents). Finally, numerical results show that the short-circuit failure mechanisms of SiC MOSFETs can be thermal generation current induced thermal runaway or high-temperature-related gate oxide damage.
Authors:
 [1] ;  [1] ;  [2] ;  [2] ;  [2] ;  [2] ;  [1]
  1. Univ. of Tennessee, Knoxville, TN (United States)
  2. Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Grant/Contract Number:
AC05-00OR22725
Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Power Electronics
Additional Journal Information:
Journal Volume: 31; Journal Issue: 2; Journal ID: ISSN 0885-8993
Publisher:
IEEE
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Power Electronics and Electric Machinery Research Facility
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Electrothermal model; leakage current; silicon carbide (SiC) MOSFETs; short-circuit capability; thermal runaway; PROTECTION SCHEMES; CAPACITANCE; BEHAVIOR; DEVICES; MODULE; 4H
OSTI Identifier:
1261470

Wang, Zhiqiang, Shi, Xiaojie, Tolbert, Leon M., Wang, Fred, Liang, Zhenxian, Costinett, Daniel, and Blalock, Benjamin J.. Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs. United States: N. p., Web. doi:10.1109/TPEL.2015.2416358.
Wang, Zhiqiang, Shi, Xiaojie, Tolbert, Leon M., Wang, Fred, Liang, Zhenxian, Costinett, Daniel, & Blalock, Benjamin J.. Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs. United States. doi:10.1109/TPEL.2015.2416358.
Wang, Zhiqiang, Shi, Xiaojie, Tolbert, Leon M., Wang, Fred, Liang, Zhenxian, Costinett, Daniel, and Blalock, Benjamin J.. 2016. "Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs". United States. doi:10.1109/TPEL.2015.2416358. https://www.osti.gov/servlets/purl/1261470.
@article{osti_1261470,
title = {Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs},
author = {Wang, Zhiqiang and Shi, Xiaojie and Tolbert, Leon M. and Wang, Fred and Liang, Zhenxian and Costinett, Daniel and Blalock, Benjamin J.},
abstractNote = {Our paper presents a comprehensive short-circuit ruggedness evaluation and numerical investigation of up-to-date commercial silicon carbide (SiC) MOSFETs. The short-circuit capability of three types of commercial 1200-V SiC MOSFETs is tested under various conditions, with case temperatures from 25 to 200 degrees C and dc bus voltages from 400 to 750 V. It is found that the commercial SiC MOSFETs can withstand short-circuit current for only several microseconds with a dc bus voltage of 750 V and case temperature of 200 degrees C. Moreover, the experimental short-circuit behaviors are compared, and analyzed through numerical thermal dynamic simulation. Specifically, an electrothermal model is built to estimate the device internal temperature distribution, considering the temperature-dependent thermal properties of SiC material. Based on the temperature information, a leakage current model is derived to calculate the main leakage current components (i.e., thermal, diffusion, and avalanche generation currents). Finally, numerical results show that the short-circuit failure mechanisms of SiC MOSFETs can be thermal generation current induced thermal runaway or high-temperature-related gate oxide damage.},
doi = {10.1109/TPEL.2015.2416358},
journal = {IEEE Transactions on Power Electronics},
number = 2,
volume = 31,
place = {United States},
year = {2016},
month = {2}
}