Direct observation of localized radial oxygen migration in functioning tantalum oxide memristors
Abstract
© 2016 Wiley-VCH Verlag GmbH & Co. KGaA. Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in operando X-ray absorption spectromicroscopy. This approach allows a physical description of the evolution of conduction channel and eventual device failure. The observed ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-driven oxygen migration.
- Authors:
-
- Hewlett Packard Labs., Palo Alto, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
- Hewlett Packard Labs., Palo Alto, CA (United States)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Stanford Univ., Stanford, CA (United States)
- Publication Date:
- Research Org.:
- SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1256642
- Alternate Identifier(s):
- OSTI ID: 1393039
- Report Number(s):
- SLAC-PUB-16544
Journal ID: ISSN 0935-9648; arXiv:1602.01204
- Grant/Contract Number:
- AC02-76SF00515; AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Materials
- Additional Journal Information:
- Journal Volume: 28; Journal Issue: 14; Journal ID: ISSN 0935-9648
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ENG; MATSCI; SYNCHRAD
Citation Formats
Kumar, Suhas, Graves, Catherine E., Strachan, John Paul, Grafals, Emmanuelle Merced, Arthur L. David Kilcoyne, Tyliszczak, Tolek, Weker, Johanna Nelson, Nishi, Yoshio, and Williams, R. Stanley. Direct observation of localized radial oxygen migration in functioning tantalum oxide memristors. United States: N. p., 2016.
Web. doi:10.1002/adma.201505435.
Kumar, Suhas, Graves, Catherine E., Strachan, John Paul, Grafals, Emmanuelle Merced, Arthur L. David Kilcoyne, Tyliszczak, Tolek, Weker, Johanna Nelson, Nishi, Yoshio, & Williams, R. Stanley. Direct observation of localized radial oxygen migration in functioning tantalum oxide memristors. United States. https://doi.org/10.1002/adma.201505435
Kumar, Suhas, Graves, Catherine E., Strachan, John Paul, Grafals, Emmanuelle Merced, Arthur L. David Kilcoyne, Tyliszczak, Tolek, Weker, Johanna Nelson, Nishi, Yoshio, and Williams, R. Stanley. Tue .
"Direct observation of localized radial oxygen migration in functioning tantalum oxide memristors". United States. https://doi.org/10.1002/adma.201505435. https://www.osti.gov/servlets/purl/1256642.
@article{osti_1256642,
title = {Direct observation of localized radial oxygen migration in functioning tantalum oxide memristors},
author = {Kumar, Suhas and Graves, Catherine E. and Strachan, John Paul and Grafals, Emmanuelle Merced and Arthur L. David Kilcoyne and Tyliszczak, Tolek and Weker, Johanna Nelson and Nishi, Yoshio and Williams, R. Stanley},
abstractNote = {© 2016 Wiley-VCH Verlag GmbH & Co. KGaA. Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in operando X-ray absorption spectromicroscopy. This approach allows a physical description of the evolution of conduction channel and eventual device failure. The observed ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-driven oxygen migration.},
doi = {10.1002/adma.201505435},
journal = {Advanced Materials},
number = 14,
volume = 28,
place = {United States},
year = {Tue Feb 02 00:00:00 EST 2016},
month = {Tue Feb 02 00:00:00 EST 2016}
}
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