skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Direct observation of localized radial oxygen migration in functioning tantalum oxide memristors

Abstract

© 2016 Wiley-VCH Verlag GmbH & Co. KGaA. Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in operando X-ray absorption spectromicroscopy. This approach allows a physical description of the evolution of conduction channel and eventual device failure. The observed ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-driven oxygen migration.

Authors:
 [1];  [2];  [2];  [2]; ;  [3];  [4];  [5];  [2]
  1. Hewlett Packard Labs., Palo Alto, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  2. Hewlett Packard Labs., Palo Alto, CA (United States)
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  4. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  5. Stanford Univ., Stanford, CA (United States)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1256642
Alternate Identifier(s):
OSTI ID: 1393039
Report Number(s):
SLAC-PUB-16544
Journal ID: ISSN 0935-9648; arXiv:1602.01204
Grant/Contract Number:  
AC02-76SF00515; AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 28; Journal Issue: 14; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ENG; MATSCI; SYNCHRAD

Citation Formats

Kumar, Suhas, Graves, Catherine E., Strachan, John Paul, Grafals, Emmanuelle Merced, Arthur L. David Kilcoyne, Tyliszczak, Tolek, Weker, Johanna Nelson, Nishi, Yoshio, and Williams, R. Stanley. Direct observation of localized radial oxygen migration in functioning tantalum oxide memristors. United States: N. p., 2016. Web. https://doi.org/10.1002/adma.201505435.
Kumar, Suhas, Graves, Catherine E., Strachan, John Paul, Grafals, Emmanuelle Merced, Arthur L. David Kilcoyne, Tyliszczak, Tolek, Weker, Johanna Nelson, Nishi, Yoshio, & Williams, R. Stanley. Direct observation of localized radial oxygen migration in functioning tantalum oxide memristors. United States. https://doi.org/10.1002/adma.201505435
Kumar, Suhas, Graves, Catherine E., Strachan, John Paul, Grafals, Emmanuelle Merced, Arthur L. David Kilcoyne, Tyliszczak, Tolek, Weker, Johanna Nelson, Nishi, Yoshio, and Williams, R. Stanley. Tue . "Direct observation of localized radial oxygen migration in functioning tantalum oxide memristors". United States. https://doi.org/10.1002/adma.201505435. https://www.osti.gov/servlets/purl/1256642.
@article{osti_1256642,
title = {Direct observation of localized radial oxygen migration in functioning tantalum oxide memristors},
author = {Kumar, Suhas and Graves, Catherine E. and Strachan, John Paul and Grafals, Emmanuelle Merced and Arthur L. David Kilcoyne and Tyliszczak, Tolek and Weker, Johanna Nelson and Nishi, Yoshio and Williams, R. Stanley},
abstractNote = {© 2016 Wiley-VCH Verlag GmbH & Co. KGaA. Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in operando X-ray absorption spectromicroscopy. This approach allows a physical description of the evolution of conduction channel and eventual device failure. The observed ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-driven oxygen migration.},
doi = {10.1002/adma.201505435},
journal = {Advanced Materials},
number = 14,
volume = 28,
place = {United States},
year = {2016},
month = {2}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 24 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Electronic structure and transport measurements of amorphous transition-metal oxides: observation of Fermi glass behavior
journal, March 2012


A High Resolution, Hard X-ray Bio-imaging Facility at SSRL
journal, June 2008


Influence of carrier injection on resistive switching of TiO2 thin films with Pt electrodes
journal, October 2006

  • Kim, Kyung Min; Choi, Byung Joon; Jeong, Doo Seok
  • Applied Physics Letters, Vol. 89, Issue 16
  • DOI: 10.1063/1.2361268

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
journal, September 2014


High switching endurance in TaOx memristive devices
journal, December 2010

  • Yang, J. Joshua; Zhang, M. -X.; Strachan, John Paul
  • Applied Physics Letters, Vol. 97, Issue 23
  • DOI: 10.1063/1.3524521

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor
journal, November 2011

  • Miao, Feng; Strachan, John Paul; Yang, J. Joshua
  • Advanced Materials, Vol. 23, Issue 47, p. 5633-5640
  • DOI: 10.1002/adma.201103379

Exponential ionic drift: fast switching and low volatility of thin-film memristors
journal, November 2008


Spectromicroscopy of tantalum oxide memristors
journal, June 2011

  • Strachan, John Paul; Medeiros-Ribeiro, Gilberto; Yang, J. Joshua
  • Applied Physics Letters, Vol. 98, Issue 24, Article No. 242114
  • DOI: 10.1063/1.3599589

Interferometer-controlled scanning transmission X-ray microscopes at the Advanced Light Source
journal, February 2003

  • Kilcoyne, A. L. D.; Tyliszczak, T.; Steele, W. F.
  • Journal of Synchrotron Radiation, Vol. 10, Issue 2
  • DOI: 10.1107/S0909049502017739

Sub-nanosecond switching of a tantalum oxide memristor
journal, November 2011


Ionic bipolar resistive switching modes determined by the preceding unipolar resistive switching reset behavior in Pt/TiO 2 /Pt
journal, March 2013


ON-OFF switching mechanism of resistive–random–access–memories based on the formation and disruption of oxygen vacancy conducting channels
journal, February 2012

  • Kamiya, Katsumasa; Young Yang, Moon; Park, Seong-Geon
  • Applied Physics Letters, Vol. 100, Issue 7
  • DOI: 10.1063/1.3685222

The formation of metal–oxygen species at low temperatures
journal, May 1990

  • Qiu, S. L.; Lin, C. L.; Chen, Jie
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 8, Issue 3
  • DOI: 10.1116/1.576677

Three-Dimensional Fully-Coupled Electrical and Thermal Transport Model of Dynamic Switching in Oxide Memristors
journal, September 2015


Intrinsic constrains on thermally-assisted memristive switching
journal, January 2011


Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor
journal, February 2014

  • Kim, Sungho; Choi, ShinHyun; Lu, Wei
  • ACS Nano, Vol. 8, Issue 3
  • DOI: 10.1021/nn405827t

Interpreting the near edges of O 2 and O 2 in alkali-metal superoxides
journal, October 1991


Mechanism of localized electrical conduction at the onset of electroforming in TiO 2 based resistive switching devices
journal, March 2014

  • Noman, Mohammad; Sharma, Abhishek A.; Meng Lu, Yi
  • Applied Physics Letters, Vol. 104, Issue 11
  • DOI: 10.1063/1.4869230

In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors
journal, July 2015

  • Kumar, Suhas; Graves, Catherine E.; Strachan, John Paul
  • Journal of Applied Physics, Vol. 118, Issue 3
  • DOI: 10.1063/1.4926477

Thermal Separation: Interplay between the Soret Effect and Entropic Force Gradient
journal, July 2011


Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches
journal, September 2011

  • Menzel, Stephan; Waters, Matthias; Marchewka, Astrid
  • Advanced Functional Materials, Vol. 21, Issue 23
  • DOI: 10.1002/adfm.201101117

Local Temperature Redistribution and Structural Transition During Joule-Heating-Driven Conductance Switching in VO 2
journal, July 2013

  • Kumar, Suhas; Pickett, Matthew D.; Strachan, John Paul
  • Advanced Materials, Vol. 25, Issue 42
  • DOI: 10.1002/adma.201302046

Modeling for multilevel switching in oxide-based bipolar resistive memory
journal, May 2012


Effects of oxygen content on the optical properties of tantalum oxide films deposited by ion-beam sputtering
journal, January 1985

  • Demiryont, H.; Sites, James R.; Geib, Kent
  • Applied Optics, Vol. 24, Issue 4
  • DOI: 10.1364/AO.24.000490

Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems
journal, September 2015

  • Wedig, Anja; Luebben, Michael; Cho, Deok-Yong
  • Nature Nanotechnology, Vol. 11, Issue 1
  • DOI: 10.1038/nnano.2015.221

The switching location of a bipolar memristor: chemical, thermal and structural mapping
journal, May 2011


First principles calculations of oxygen vacancy-ordering effects in resistance change memory materials incorporating binary transition metal oxides
journal, June 2012

  • Magyari-Köpe, Blanka; Park, Seong Geon; Lee, Hyung-Dong
  • Journal of Materials Science, Vol. 47, Issue 21
  • DOI: 10.1007/s10853-012-6638-1

Near‐edge x‐ray absorption fine structure characterization of compositions and reactivities of transition metal oxides
journal, May 1996

  • Chen, J. G.; Frühberger, B.; Colaianni, M. L.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 14, Issue 3
  • DOI: 10.1116/1.580316

First principles modeling of charged oxygen vacancy filaments in reduced TiO 2 –implications to the operation of non-volatile memory devices
journal, July 2013

  • Zhao, Liang; Park, Seong-Geon; Magyari-Köpe, Blanka
  • Mathematical and Computer Modelling, Vol. 58, Issue 1-2
  • DOI: 10.1016/j.mcm.2012.11.009

Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories
journal, April 2013


Photoemission studies of the low-temperature reaction of metals and oxygen
journal, April 1990


Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors
journal, March 2012

  • Strukov, Dmitri B.; Alibart, Fabien; Stanley Williams, R.
  • Applied Physics A, Vol. 107, Issue 3
  • DOI: 10.1007/s00339-012-6902-x

Dual Conical Conducting Filament Model in Resistance Switching TiO2 Thin Films
journal, January 2015

  • Kim, Kyung Min; Park, Tae Hyung; Hwang, Cheol Seong
  • Scientific Reports, Vol. 5, Issue 1
  • DOI: 10.1038/srep07844

Memristive devices for computing
journal, January 2013

  • Yang, J. Joshua; Strukov, Dmitri B.; Stewart, Duncan R.
  • Nature Nanotechnology, Vol. 8, Issue 1, p. 13-24
  • DOI: 10.1038/nnano.2012.240

Physical electro-thermal model of resistive switching in bi-layered resistance-change memory
journal, April 2013

  • Kim, Sungho; Kim, Sae-Jin; Kim, Kyung Min
  • Scientific Reports, Vol. 3, Issue 1
  • DOI: 10.1038/srep01680

Microscopic model for the kinetics of the reset process in HfO2 RRAM
conference, April 2013

  • Kalantarian, A.; Bersuker, G.; Butcher, B.
  • 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)
  • DOI: 10.1109/VLSI-TSA.2013.6545582

Engineering nonlinearity into memristors for passive crossbar applications
journal, March 2012

  • Joshua Yang, J.; Zhang, M.-X.; Pickett, Matthew D.
  • Applied Physics Letters, Vol. 100, Issue 11, Article No. 113501
  • DOI: 10.1063/1.3693392

Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism
conference, December 2008


In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure
journal, September 2013

  • Park, Gyeong-Su; Kim, Young Bae; Park, Seong Yong
  • Nature Communications, Vol. 4, Issue 1
  • DOI: 10.1038/ncomms3382

    Works referencing / citing this record:

    Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfO x based Memristive Devices
    journal, July 2017

    • Sharath, Sankaramangalam Ulhas; Vogel, Stefan; Molina-Luna, Leopoldo
    • Advanced Functional Materials, Vol. 27, Issue 32
    • DOI: 10.1002/adfm.201700432

    On-Demand Reconfiguration of Nanomaterials: When Electronics Meets Ionics
    journal, October 2017


    Low‐Conductance and Multilevel CMOS‐Integrated Nanoscale Oxide Memristors
    journal, November 2018

    • Sheng, Xia; Graves, Catherine E.; Kumar, Suhas
    • Advanced Electronic Materials, Vol. 5, Issue 9
    • DOI: 10.1002/aelm.201800876

    Stable Metallic Enrichment in Conductive Filaments in TaO x ‐Based Resistive Switches Arising from Competing Diffusive Fluxes
    journal, April 2019

    • Ma, Yuanzhi; Goodwill, Jonathan M.; Li, Dasheng
    • Advanced Electronic Materials, Vol. 5, Issue 7
    • DOI: 10.1002/aelm.201800954

    Nanoionic Resistive‐Switching Devices
    journal, November 2018

    • Zhu, Xiaojian; Lee, Seung Hwan; Lu, Wei D.
    • Advanced Electronic Materials, Vol. 5, Issue 9
    • DOI: 10.1002/aelm.201900184

    Memristive Synapses and Neurons for Bioinspired Computing
    journal, November 2018

    • Yang, Rui; Huang, He‐Ming; Guo, Xin
    • Advanced Electronic Materials, Vol. 5, Issue 9
    • DOI: 10.1002/aelm.201900287

    Dual‐Functional Nonvolatile and Volatile Memory in Resistively Switching Indium Tin Oxide/HfO x Devices
    journal, October 2019

    • Li, Wenxi; Wang, Fang; Zhang, Jingwei
    • physica status solidi (a), Vol. 216, Issue 23
    • DOI: 10.1002/pssa.201900555

    A new approach to modeling TiO2−x-based memristors using molecular dynamics simulation
    journal, April 2019


    Single crystalline SrTiO3 as memristive model system: From materials science to neurological and psychological functions
    journal, April 2017


    Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes
    journal, August 2016

    • Baeumer, Christoph; Schmitz, Christoph; Marchewka, Astrid
    • Nature Communications, Vol. 7, Issue 1
    • DOI: 10.1038/ncomms12398

    Physical origins of current and temperature controlled negative differential resistances in NbO2
    journal, September 2017


    Separation of current density and electric field domains caused by nonlinear electronic instabilities
    journal, May 2018


    Resistive switching materials for information processing
    journal, January 2020


    Probing memristive switching in nanoionic devices
    journal, May 2018


    Spatially uniform resistance switching of low current, high endurance titanium–niobium-oxide memristors
    journal, January 2017

    • Kumar, Suhas; Davila, Noraica; Wang, Ziwen
    • Nanoscale, Vol. 9, Issue 5
    • DOI: 10.1039/c6nr07671h

    Highly active Ta 2 O 5 microcubic single crystals: facet energy calculation, facile fabrication and enhanced photocatalytic activity of hydrogen production
    journal, January 2016

    • Tu, Hao; Xu, Leilei; Mou, Fangzhi
    • Journal of Materials Chemistry A, Vol. 4, Issue 42
    • DOI: 10.1039/c6ta06648h

    Tuning conductivity and magnetism of CuFe 2 O 4 via cation redistribution
    journal, January 2017

    • Zhang, Ruyi; Yuan, Qibin; Ma, Rong
    • RSC Advances, Vol. 7, Issue 35
    • DOI: 10.1039/c7ra01765k

    Interfacial redox processes in memristive devices based on valence change and electrochemical metallization
    journal, January 2019

    • Liu, Keqin; Qin, Liang; Zhang, Xiaoxian
    • Faraday Discussions, Vol. 213
    • DOI: 10.1039/c8fd00113h

    Chemically addressed switching measurements in graphene electrode memristive devices using in situ XPS
    journal, January 2019

    • Köymen, Itır; Aydoğan Göktürk, Pınar; Kocabaş, Coşkun
    • Faraday Discussions, Vol. 213
    • DOI: 10.1039/c8fd00129d

    Programmable, electroforming-free TiO x /TaO x heterojunction-based non-volatile memory devices
    journal, January 2019

    • Srivastava, Saurabh; Thomas, Joseph Palathinkal; Leung, Kam Tong
    • Nanoscale, Vol. 11, Issue 39
    • DOI: 10.1039/c9nr06403f

    Oxygen migration during resistance switching and failure of hafnium oxide memristors
    journal, March 2017

    • Kumar, Suhas; Wang, Ziwen; Huang, Xiaopeng
    • Applied Physics Letters, Vol. 110, Issue 10
    • DOI: 10.1063/1.4974535

    Combination of conductive filaments and Schottky behavior in multifunctional Sn 1−x Cu x O 2−δ memristor
    journal, October 2017

    • Mei, Fang; Shen, Hui; Li, Yang
    • Applied Physics Letters, Vol. 111, Issue 14
    • DOI: 10.1063/1.5005803

    Valence change detection in memristive oxide based heterostructure cells by hard X-ray photoelectron emission spectroscopy
    journal, April 2018

    • Kindsmüller, A.; Schmitz, C.; Wiemann, C.
    • APL Materials, Vol. 6, Issue 4
    • DOI: 10.1063/1.5026063

    Bipolar to unipolar mode transition and imitation of metaplasticity in oxide based memristors with enhanced ionic conductivity
    journal, October 2018

    • Cheng, Caidie; Li, Yiqing; Zhang, Teng
    • Journal of Applied Physics, Vol. 124, Issue 15
    • DOI: 10.1063/1.5037962

    Intensity-modulated LED achieved through integrating p-GaN/n-ZnO heterojunction with multilevel RRAM
    journal, November 2018

    • Qi, Meng; Zhang, Xue; Yang, Liu
    • Applied Physics Letters, Vol. 113, Issue 22
    • DOI: 10.1063/1.5058173

    Analysis and simulation of the multiple resistive switching modes occurring in HfO x -based resistive random access memories using memdiodes
    journal, June 2019

    • Petzold, S.; Miranda, E.; Sharath, S. U.
    • Journal of Applied Physics, Vol. 125, Issue 23
    • DOI: 10.1063/1.5094864

    Current-controlled negative differential resistance in small-polaron hopping system
    journal, May 2019

    • Wu, Jing; Hu, Tao; Yin, Yiming
    • AIP Advances, Vol. 9, Issue 5
    • DOI: 10.1063/1.5097616

    Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes
    text, January 2016


    Valence change detection in memristive oxide based heterostructure cells by hard X-ray photoelectron emission spectroscopy
    text, January 2018