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Title: High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface

Authors:
 [1]; ORCiD logo [1];  [1];  [1];  [1]
  1. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1253928
Grant/Contract Number:  
EE0005403
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 108 Journal Issue: 20; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Bedair, S. M., Harmon, Jeffrey L., Carlin, C. Zachary, Hashem Sayed, Islam E., and Colter, P. C. High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface. United States: N. p., 2016. Web. doi:10.1063/1.4951690.
Bedair, S. M., Harmon, Jeffrey L., Carlin, C. Zachary, Hashem Sayed, Islam E., & Colter, P. C. High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface. United States. doi:10.1063/1.4951690.
Bedair, S. M., Harmon, Jeffrey L., Carlin, C. Zachary, Hashem Sayed, Islam E., and Colter, P. C. Thu . "High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface". United States. doi:10.1063/1.4951690.
@article{osti_1253928,
title = {High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface},
author = {Bedair, S. M. and Harmon, Jeffrey L. and Carlin, C. Zachary and Hashem Sayed, Islam E. and Colter, P. C.},
abstractNote = {},
doi = {10.1063/1.4951690},
journal = {Applied Physics Letters},
number = 20,
volume = 108,
place = {United States},
year = {2016},
month = {5}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.4951690

Citation Metrics:
Cited by: 3 works
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