Search Menu
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information
Search Scholarly Publications

Title: High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface

Authors:
 [1]; ORCiD logo [1];  [1];  [1];  [1]
+ Show Author Affiliations
  1. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1253928
Grant/Contract Number:  
EE0005403
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 108 Journal Issue: 20; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Bedair, S. M., Harmon, Jeffrey L., Carlin, C. Zachary, Hashem Sayed, Islam E., and Colter, P. C. High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface. United States: N. p., 2016. Web. doi:10.1063/1.4951690.
Copy to clipboard
Bedair, S. M., Harmon, Jeffrey L., Carlin, C. Zachary, Hashem Sayed, Islam E., & Colter, P. C. High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface. United States. https://doi.org/10.1063/1.4951690
Copy to clipboard
Bedair, S. M., Harmon, Jeffrey L., Carlin, C. Zachary, Hashem Sayed, Islam E., and Colter, P. C. Thu . "High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface". United States. https://doi.org/10.1063/1.4951690.
Copy to clipboard
@article{osti_1253928,
title = {High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface},
author = {Bedair, S. M. and Harmon, Jeffrey L. and Carlin, C. Zachary and Hashem Sayed, Islam E. and Colter, P. C.},
abstractNote = {},
doi = {10.1063/1.4951690},
journal = {Applied Physics Letters},
number = 20,
volume = 108,
place = {United States},
year = {Thu May 19 00:00:00 EDT 2016},
month = {Thu May 19 00:00:00 EDT 2016}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Accepted Manuscript (Publisher)
Publisher's Version of Record
https://doi.org/10.1063/1.4951690
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal
Citation Metrics:
Cited by: 13 works
Citation information provided by
Web of Science
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

Tellurium delta-doped InGaP layers grown by metalorganic vapour phase epitaxy
journal, April 2013

  • Kúdela, Róbert; Šoltýs, Ján; Vincze, Andrej
  • physica status solidi (RRL) - Rapid Research Letters, Vol. 7, Issue 6
  • DOI: 10.1002/pssr.201307116

Effect of GaAs interfacial layer on the performance of high bandgap tunnel junctions for multijunction solar cells
journal, September 2013

  • Samberg, Joshua P.; Zachary Carlin, C.; Bradshaw, Geoff K.
  • Applied Physics Letters, Vol. 103, Issue 10
  • DOI: 10.1063/1.4819917

Modeling of tunnel junctions for high efficiency solar cells
journal, July 2010

  • Hauser, John R.; Carlin, Zach; Bedair, S. M.
  • Applied Physics Letters, Vol. 97, Issue 4
  • DOI: 10.1063/1.3469942

AlGaAs/GaInP heterojunction tunnel diode for cascade solar cell application
journal, August 1993

  • Jung, D.; Parker, C. A.; Ramdani, J.
  • Journal of Applied Physics, Vol. 74, Issue 3, p. 2090-2093
  • DOI: 10.1063/1.354753

Band parameters for III–V compound semiconductors and their alloys
journal, June 2001

  • Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R.
  • Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875
  • DOI: 10.1063/1.1368156

A validated SPICE network simulation study on improving tunnel diodes by introducing lateral conduction layers: SPICE network simulation study on improving tunnel diodes
journal, July 2011

  • Steiner, Marc; Guter, Wolfgang; Peharz, Gerhard
  • Progress in Photovoltaics: Research and Applications, Vol. 20, Issue 3
  • DOI: 10.1002/pip.1133

A two‐junction cascade solar‐cell structure
journal, January 1979

  • Bedair, S. M.; Lamorte, M. F.; Hauser, J. R.
  • Applied Physics Letters, Vol. 34, Issue 1
  • DOI: 10.1063/1.90576

Highly conductive p  + +  -AlGaAs/n  + +  -GaInP tunnel junctions for ultra-high concentrator solar cells : Highly conductive p
journal, February 2014

  • Barrigón, Enrique; García, Ivan; Barrutia, Laura
  • Progress in Photovoltaics: Research and Applications, Vol. 22, Issue 4
  • DOI: 10.1002/pip.2476

Te doping of GaInP: Ordering and step structure
journal, April 1999

  • Lee, S. H.; Fetzer, C. Y.; Stringfellow, G. B.
  • Journal of Applied Physics, Vol. 85, Issue 7
  • DOI: 10.1063/1.369719

Analysis of tellurium as n-type dopant in GaInP: Doping, diffusion, memory effect and surfactant properties
journal, January 2007

Theory of Tunneling
journal, January 1961

Tellurium doping of InGaP for tunnel junction applications in triple junction solar cells
journal, January 2011

Resonant electron tunneling through defects in GaAs tunnel diodes
journal, November 2008

  • Jandieri, K.; Baranovskii, S. D.; Rubel, O.
  • Journal of Applied Physics, Vol. 104, Issue 9
  • DOI: 10.1063/1.3013886

III–V compound multi-junction solar cells: present and future
journal, January 2003

Mechanism of Zn and Si diffusion from a highly doped tunnel junction for InGaP/GaAs tandem solar cells
journal, February 1999

  • Takamoto, Tatsuya; Yumaguchi, Masafumi; Ikeda, Eiji
  • Journal of Applied Physics, Vol. 85, Issue 3
  • DOI: 10.1063/1.369278

Calculated natural band offsets of all II–VI and III–V semiconductors: Chemical trends and the role of cation d orbitals
journal, April 1998

  • Wei, Su-Huai; Zunger, Alex
  • Applied Physics Letters, Vol. 72, Issue 16
  • DOI: 10.1063/1.121249
    Sort by:
    [ × clear filter / sort ]

    Similar Records in DOE PAGES and OSTI.GOV collections: