High band gap II-VI and III-V tunneling junctions for silicon multijunction solar cells
Abstract
This patent describes a multijunction silicon solar cell comprising p/n junction solar cells epitaxially grown in layers to receive solar energy in series through the n-type layer of each solar cell. The p-type layer of one is connected to the n-type layer of the next in series by a p+/n+ tunnel junction of III-V or II-VI semiconductor material of higher band-gap than silicon, and has a near perfect lattice match with silicon.
- Inventors:
- Publication Date:
- OSTI Identifier:
- 6928036
- Patent Number(s):
- US 4631352
- Assignee:
- NASA, Washington, DC
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: Filed date 17 Dec 1985
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; SILICON SOLAR CELLS; P-N JUNCTIONS; CRYSTAL GROWTH; CRYSTAL LATTICES; EPITAXY; GRADED BAND GAPS; LAYERS; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; SILICON; TUNNEL EFFECT; CRYSTAL STRUCTURE; DIRECT ENERGY CONVERTERS; ELEMENTS; EQUIPMENT; JUNCTIONS; MATERIALS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SOLAR CELLS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion
Citation Formats
Daud, T, and Kachare, A H. High band gap II-VI and III-V tunneling junctions for silicon multijunction solar cells. United States: N. p., 1986.
Web.
Daud, T, & Kachare, A H. High band gap II-VI and III-V tunneling junctions for silicon multijunction solar cells. United States.
Daud, T, and Kachare, A H. 1986.
"High band gap II-VI and III-V tunneling junctions for silicon multijunction solar cells". United States.
@article{osti_6928036,
title = {High band gap II-VI and III-V tunneling junctions for silicon multijunction solar cells},
author = {Daud, T and Kachare, A H},
abstractNote = {This patent describes a multijunction silicon solar cell comprising p/n junction solar cells epitaxially grown in layers to receive solar energy in series through the n-type layer of each solar cell. The p-type layer of one is connected to the n-type layer of the next in series by a p+/n+ tunnel junction of III-V or II-VI semiconductor material of higher band-gap than silicon, and has a near perfect lattice match with silicon.},
doi = {},
url = {https://www.osti.gov/biblio/6928036},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 23 00:00:00 EST 1986},
month = {Tue Dec 23 00:00:00 EST 1986}
}
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