Atomic Resolution in Situ Imaging of a Double-Bilayer Multistep Growth Mode in Gallium Nitride Nanowires

Gamalski, A. D.; Tersoff, J.; Stach, E. A.

doi:10.1021/acs.nanolett.5b04650

Title: Atomic Resolution in Situ Imaging of a Double-Bilayer Multistep Growth Mode in Gallium Nitride Nanowires

Abstract

We study the growth of GaN nanowires from liquid Au–Ga catalysts using environmental transmission electron microscopy. GaN wires grow in either (11¯20) or (11¯00) directions, by the addition of {11¯00} double bilayers via step flow with multiple steps. Step-train growth is not typically seen with liquid catalysts, and we suggest that it results from low step mobility related to the unusual double-height step structure. Finally, the results here illustrate the surprising dynamics of catalytic GaN wire growth at the nanoscale and highlight striking differences between the growth of GaN and other III–V semiconductor nanowires.

Authors:: Gamalski, A. D.; Tersoff, J.; Stach, E. A.

Publication Date:: Wed Apr 13 00:00:00 EDT 2016

Research Org.:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1246803

Report Number(s):: BNL-111981-2016-JA
Journal ID: ISSN 1530-6984; R&D Project: 16060; KC0403020

Grant/Contract Number:: SC00112704

Resource Type:: Accepted Manuscript

Journal Name:: Nano Letters

Additional Journal Information:: Journal Volume: 16; Journal Issue: 4; Journal ID: ISSN 1530-6984

Publisher:: American Chemical Society

Country of Publication:: United States

Language:: English

Subject:: 77 NANOSCIENCE AND NANOTECHNOLOGY; gallium nitride; nanowire; environmental transmission electron microscopy; step flow

Citation Formats


                    Gamalski, A. D., Tersoff, J., and Stach, E. A. Atomic Resolution in Situ Imaging of a Double-Bilayer Multistep Growth Mode in Gallium Nitride Nanowires.  United States: N. p., 2016. 
Web.  doi:10.1021/acs.nanolett.5b04650.

Copy to clipboard


                    Gamalski, A. D., Tersoff, J., & Stach, E. A. Atomic Resolution in Situ Imaging of a Double-Bilayer Multistep Growth Mode in Gallium Nitride Nanowires.  United States.  https://doi.org/10.1021/acs.nanolett.5b04650

Copy to clipboard


                    Gamalski, A. D., Tersoff, J., and Stach, E. A. Wed .  
"Atomic Resolution in Situ Imaging of a Double-Bilayer Multistep Growth Mode in Gallium Nitride Nanowires".  United States.  https://doi.org/10.1021/acs.nanolett.5b04650.  https://www.osti.gov/servlets/purl/1246803.

Copy to clipboard


                    
@article{osti_1246803,

  title        = {Atomic Resolution in Situ Imaging of a Double-Bilayer Multistep Growth Mode in Gallium Nitride Nanowires},

  author       = {Gamalski, A. D. and Tersoff, J. and Stach, E. A.},

  abstractNote = {We study the growth of GaN nanowires from liquid Au–Ga catalysts using environmental transmission electron microscopy. GaN wires grow in either (11¯20) or (11¯00) directions, by the addition of {11¯00} double bilayers via step flow with multiple steps. Step-train growth is not typically seen with liquid catalysts, and we suggest that it results from low step mobility related to the unusual double-height step structure. Finally, the results here illustrate the surprising dynamics of catalytic GaN wire growth at the nanoscale and highlight striking differences between the growth of GaN and other III–V semiconductor nanowires.},

  doi          = {10.1021/acs.nanolett.5b04650},

  journal      = {Nano Letters},

  number       = 4,

  volume       = 16,

  place        = {United States},

  year         = {Wed Apr 13 00:00:00 EDT 2016},

  month        = {Wed Apr 13 00:00:00 EDT 2016}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1021/acs.nanolett.5b04650

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 24 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
journal, April 1998

Nakamura, Shuji; Senoh, Masayuki; Nagahama, Shin-ichi
Applied Physics Letters, Vol. 72, Issue 16
DOI: 10.1063/1.121250

Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
journal, March 1994

Nakamura, Shuji; Mukai, Takashi; Senoh, Masayuki
Applied Physics Letters, Vol. 64, Issue 13, p. 1687-1689
DOI: 10.1063/1.111832

GaN-Based RF Power Devices and Amplifiers
journal, February 2008

Mishra, U. K.; Kazior, T. E.
Proceedings of the IEEE, Vol. 96, Issue 2
DOI: 10.1109/JPROC.2007.911060

Gallium Nitride Nanowire Nanodevices
journal, February 2002

Huang, Yu; Duan, Xiangfeng; Cui, Yi
Nano Letters, Vol. 2, Issue 2
DOI: 10.1021/nl015667d

Crystallographic alignment of high-density gallium nitride nanowire arrays
journal, July 2004

Kuykendall, Tevye; Pauzauskie, Peter J.; Zhang, Yanfeng
Nature Materials, Vol. 3, Issue 8, p. 524-528
DOI: 10.1038/nmat1177

Core/Multishell Nanowire Heterostructures as Multicolor, High-Efficiency Light-Emitting Diodes
journal, November 2005

Qian, Fang; Gradečak, Silvija; Li, Yat
Nano Letters, Vol. 5, Issue 11
DOI: 10.1021/nl051689e

Equilibrium limits of coherency in strained nanowire heterostructures
journal, June 2005

Ertekin, Elif; Greaney, P. A.; Chrzan, D. C.
Journal of Applied Physics, Vol. 97, Issue 11
DOI: 10.1063/1.1903106

Dislocation Filtering in GaN Nanostructures
journal, May 2010

Colby, Robert; Liang, Zhiwen; Wildeson, Isaac H.
Nano Letters, Vol. 10, Issue 5
DOI: 10.1021/nl9037455

Diameter-Dependent Electromechanical Properties of GaN Nanowires
journal, February 2006

Nam, Chang-Yong; Jaroenapibal, Papot; Tham, Douglas
Nano Letters, Vol. 6, Issue 2
DOI: 10.1021/nl051860m

GaN nanowire lasers with low lasing thresholds
journal, October 2005

Gradečak, Silvija; Qian, Fang; Li, Yat
Applied Physics Letters, Vol. 87, Issue 17
DOI: 10.1063/1.2115087

Single gallium nitride nanowire lasers
journal, September 2002

Johnson, Justin C.; Choi, Heon-Jin; Knutsen, Kelly P.
Nature Materials, Vol. 1, Issue 2
DOI: 10.1038/nmat728

GaN Nanowire Arrays for High-Output Nanogenerators
journal, April 2010

Huang, Chi-Te; Song, Jinhui; Lee, Wei-Fan
Journal of the American Chemical Society, Vol. 132, Issue 13
DOI: 10.1021/ja909863a

Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections
journal, August 2003

Kuykendall, Tevye; Pauzauskie, Peter; Lee, Sangkwon
Nano Letters, Vol. 3, Issue 8
DOI: 10.1021/nl034422t

Axial and radial growth of Ni-induced GaN nanowires
journal, August 2007

Geelhaar, L.; Chèze, C.; Weber, W. M.
Applied Physics Letters, Vol. 91, Issue 9
DOI: 10.1063/1.2776979

Different growth rates for catalyst-induced and self-induced GaN nanowires
journal, October 2010

Chèze, C.; Geelhaar, L.; Jenichen, B.
Applied Physics Letters, Vol. 97, Issue 15
DOI: 10.1063/1.3488010

Collector Phase Transitions during Vapor−Solid−Solid Nucleation of GaN Nanowires
journal, August 2010

Chèze, Caroline; Geelhaar, Lutz; Trampert, Achim
Nano Letters, Vol. 10, Issue 9
DOI: 10.1021/nl101465b

Controlled Modulation of Diameter and Composition along Individual III–V Nitride Nanowires
journal, February 2012

Lim, Sung Keun; Crawford, Sam; Haberfehlner, Georg
Nano Letters, Vol. 13, Issue 2
DOI: 10.1021/nl300121p

Catalyst-Directed Crystallographic Orientation Control of GaN Nanowire Growth
journal, November 2014

Kuykendall, Tevye R.; Altoe, M. Virginia P.; Ogletree, D. Frank
Nano Letters, Vol. 14, Issue 12
DOI: 10.1021/nl502079v

Controlling nanowire structures through real time growth studies
journal, October 2010

Ross, Frances M.
Reports on Progress in Physics, Vol. 73, Issue 11
DOI: 10.1088/0034-4885/73/11/114501

Ledge-flow-controlled catalyst interface dynamics during Si nanowire growth
journal, March 2008

Hofmann, Stephan; Sharma, Renu; Wirth, Christoph T.
Nature Materials, Vol. 7, Issue 5
DOI: 10.1038/nmat2140

Atomic-Scale Variability and Control of III-V Nanowire Growth Kinetics
journal, January 2014

Chou, Y. - C.; Hillerich, K.; Tersoff, J.
Science, Vol. 343, Issue 6168
DOI: 10.1126/science.1244623

Straight and kinked InAs nanowire growth observed in situ by transmission electron microscopy
journal, July 2014

Lenrick, Filip; Ek, Martin; Deppert, Knut
Nano Research, Vol. 7, Issue 8
DOI: 10.1007/s12274-014-0481-4

Watching GaN Nanowires Grow
journal, June 2003

Stach, Eric A.; Pauzauskie, Peter J.; Kuykendall, Tevye
Nano Letters, Vol. 3, Issue 6
DOI: 10.1021/nl034222h

Step-Flow Kinetics in Nanowire Growth
journal, November 2010

Wen, C. -Y.; Tersoff, J.; Reuter, M. C.
Physical Review Letters, Vol. 105, Issue 19
DOI: 10.1103/PhysRevLett.105.195502

The Au−Ga (Gold-Gallium) system
journal, December 1981

Elliott, Rodney P.; Shunk, Francis A.
Bulletin of Alloy Phase Diagrams, Vol. 2, Issue 3
DOI: 10.1007/BF02868293

Direct observation of nucleation and early stages of growth of GaN nanowires
journal, February 2012

Diaz, Rosa E.; Sharma, Renu; Jarvis, Karalee
Journal of Crystal Growth, Vol. 341, Issue 1
DOI: 10.1016/j.jcrysgro.2011.09.028

Kinetics of Individual Nucleation Events Observed in Nanoscale Vapor-Liquid-Solid Growth
journal, November 2008

Kim, B. J.; Tersoff, J.; Kodambaka, S.
Science, Vol. 322, Issue 5904
DOI: 10.1126/science.1163494

Formation of Metastable Liquid Catalyst during Subeutectic Growth of Germanium Nanowires
journal, August 2010

Gamalski, A. D.; Tersoff, J.; Sharma, R.
Nano Letters, Vol. 10, Issue 8
DOI: 10.1021/nl101349e

Spatial Distribution of Defect Luminescence in GaN Nanowires
journal, May 2010

Li, Qiming; Wang, George T.
Nano Letters, Vol. 10, Issue 5
DOI: 10.1021/nl903517t

In Situ TEM Electromechanical Testing of Nanowires and Nanotubes
journal, August 2012

Espinosa, Horacio D.; Bernal, Rodrigo A.; Filleter, Tobin
Small, Vol. 8, Issue 21
DOI: 10.1002/smll.201200342

Vibrational and optical spectroscopies integrated with environmental transmission electron microscopy
journal, March 2015

Picher, Matthieu; Mazzucco, Stefano; Blankenship, Steve
Ultramicroscopy, Vol. 150
DOI: 10.1016/j.ultramic.2014.11.023

In Situ Nanomechanics of GaN Nanowires
journal, April 2011

Huang, Jian Yu; Zheng, He; Mao, S. X.
Nano Letters, Vol. 11, Issue 4
DOI: 10.1021/nl200002x

Theory of $GaN (10 \bar{1} 0)$ and ( $11 \bar{2} 0$ ) surfaces
journal, April 1996

Northrup, John E.; Neugebauer, J.
Physical Review B, Vol. 53, Issue 16
DOI: 10.1103/PhysRevB.53.R10477

Control of Si Nanowire Growth by Oxygen
journal, June 2006

Kodambaka, Suneel; Hannon, James B.; Tromp, Rudolf M.
Nano Letters, Vol. 6, Issue 6, p. 1292-1296
DOI: 10.1021/nl060059p

Cyclic Supersaturation and Triple Phase Boundary Dynamics in Germanium Nanowire Growth
journal, February 2011

Gamalski, A. D.; Ducati, C.; Hofmann, S.
The Journal of Physical Chemistry C, Vol. 115, Issue 11
DOI: 10.1021/jp1095882

Nucleation Antibunching in Catalyst-Assisted Nanowire Growth
journal, March 2010

Glas, Frank; Harmand, Jean-Christophe; Patriarche, Gilles
Physical Review Letters, Vol. 104, Issue 13
DOI: 10.1103/PhysRevLett.104.135501

Deep level optical spectroscopy of GaN nanorods
journal, September 2009

Armstrong, A.; Li, Q.; Bogart, K. H. A.
Journal of Applied Physics, Vol. 106, Issue 5
DOI: 10.1063/1.3211317

Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal–organic chemical vapour deposition
journal, November 2006

Wang, George T.; Talin, A. Alec; Werder, Donald J.
Nanotechnology, Vol. 17, Issue 23
DOI: 10.1088/0957-4484/17/23/011

Works referencing / citing this record:

Ultrafast growth of horizontal GaN nanowires by HVPE through flipping the substrate
journal, January 2018

Wu, Shaoteng; Wang, Liancheng; Liu, Zhiqiang
Nanoscale, Vol. 10, Issue 13
DOI: 10.1039/c8nr00175h

Crystal phase evolution in kinked GaN nanowires
journal, January 2020

Wu, Shaoteng; Wu, Shaofei; Song, Wenqing
Nanotechnology, Vol. 31, Issue 14
DOI: 10.1088/1361-6528/ab6479

In Situ Environmental TEM in Imaging Gas and Liquid Phase Chemical Reactions for Materials Research
journal, September 2016

Wu, Jianbo; Shan, Hao; Chen, Wenlong
Advanced Materials, Vol. 28, Issue 44
DOI: 10.1002/adma.201602519

In Situ Transmission Electron Microscopy
book, January 2019

Ross, Frances M.; Minor, Andrew M.
Springer Handbook of Microscopy
DOI: 10.1007/978-3-030-00069-1_3

In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth
journal, October 2019

Maliakkal, Carina B.; Jacobsson, Daniel; Tornberg, Marcus
Nature Communications, Vol. 10, Issue 1
DOI: 10.1038/s41467-019-12437-6

In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth
text, January 2019

Maliakkal, Carina B.; Jacobsson, Daniel; Tornberg, Marcus
arXiv
DOI: 10.48550/arxiv.1902.08275

Controlling bottom-up rapid growth of single crystalline gallium nitride nanowires on silicon
journal, December 2017

Wu, Ko-Li; Chou, Yi; Su, Chang-Chou
Scientific Reports, Vol. 7, Issue 1
DOI: 10.1038/s41598-017-17980-0

Similar Records in DOE PAGES and OSTI.GOV collections:

Desorption Induced Formation of Negative Nanowires in GaN

Journal Article Stach, E A ; Kim, B -J - Journal of Crystal Growth

We report in-situ transmission electron microscopy studies of the formation of negative nanowires created by thermal decomposition of single crystal GaN. During annealing, vertical negative nanowires are formed in [0 0 0 1] by preferential dissociation of GaN along the 1 0 {bar 1} 0 prism planes, while lateral negative nanowires grow in close-packed 1 0 {bar 1} 0 by the self-catalytic solid-liquid-vapor (SLV) mechanism. Our quantitative measurements show that the growth rates of the laterally grown negative nanowires are independent of the wire diameter, indicating that the rate-limiting step is the decomposition of GaN on the surface of themore »« less
In Situ Laser Synthesis of Si Nanowires in the Dynamic TEM

Journal Article Taheri, M ; Reed, B ; LaGrange, T ; ... - Small, vol. 4, N/A, April 1, 2008, pp. 2187 - 2190

Nanowires (NWs) are a crucial component in today's nanoscale devices and are vital to the further development of nanotechnology. To achieve reliable growth of NWs and uniform electronic properties, the specific mechanisms that control the structural development of NWs and the correlation between NWs and their nucleation and growth processes must be examined. Because imaging is not possible in Chemical Vapor Deposition (CVD) chambers, in situ transmission electron microscope (TEM) based growth methods provide a method for characterizing NW evolution. In this paper, we describe a new method of in situ synthesis and imaging of NWs using laser-assisted growth insidemore »« less
Full Text Available
Investigation of phonon modes in gallium nitride nanowires deposited by thermal CVD

Journal Article Rizal, Umesh ; Swain, Bibhu P., E-mail: bibhu.s@smit.smu.edu.in ; Swain, Bhabani S., E-mail: bsswain@kookmin.ac.kr - AIP Conference Proceedings

Gallium nitride nanowires (GaN-NWs) of diameters ranging from 20 to 80 nm were grown on the p-type Si substrate by Thermal Chemical Vapor Deposition (TCVD) using Iron (Fe) catalyst via VLS mechanism. Raman and FTIR spectra reveal the presence of broad transverse optic (TO) and longitudinal optic (LO) phonon peak spreads over 500-600 cm{sup −1} and 720 cm{sup −1} respectively. The detail deconvolution of integrated transverse and longitudinal phonon analysis reveals phonon confinement brought out by incorporation of hydrogen atom. The red shifts of TO and LO phonon peak position indicates nanosized effect. I{sub A1(LO)}/I{sub A1(TO)} increases from 0.073 to 1.0 and theirmore »« less
https://doi.org/10.1063/1.4945178
III-Nitride Nanowire Lasers

Thesis/Dissertation Wright, Jeremy Benjamin

In recent years there has been a tremendous interest in nanoscale optoelectronic devices. Among these devices are semiconductor nanowires whose diameters range from 10-100 nm. To date, nanowires have been grown using many semiconducting material systems and have been utilized as light emitting diodes, photodetectors, and solar cells. Nanowires possess a relatively large index contrast relative to their dielectric environment and can be used as lasers. A key gure of merit that allows for nanowire lasing is the relatively high optical con nement factor. In this work, I discuss the optical characterization of 3 types of III-nitride nanowire laser devices.more »« less
Surface photovoltage spectroscopy observes junctions and carrier separation in gallium nitride nanowire arrays for overall water-splitting

Journal Article Doughty, Rachel M. ; Chowdhury, Faqrul A. ; Mi, Zetian ; ... - Journal of Chemical Physics

Gallium nitride (GaN) nanowire arrays on silicon are able to drive the overall water-splitting reaction with up to 3.3% solar-to-hydrogen efficiency. Photochemical charge separation is key to the operation of these devices, but details are difficult to observe experimentally because of the number of components and interfaces. Here, we use surface photovoltage spectroscopy to study charge transfer in i-, n-, and p-GaN nanowire arrays on n+ -Si wafers in the presence and absence of Rh/Cr₂O₃ co-catalysts. The effect of the space charge layer and sub-bandgap defects on majority and minority carrier transport can be clearly observed, and estimates of themore »« less
https://doi.org/10.1063/5.0021273

Full Text Available

Similar Records

Title: Atomic Resolution in Situ Imaging of a Double-Bilayer Multistep Growth Mode in Gallium Nitride Nanowires

Abstract

Citation Formats

Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates journal, April 1998

Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes journal, March 1994

GaN-Based RF Power Devices and Amplifiers journal, February 2008

Gallium Nitride Nanowire Nanodevices journal, February 2002

Crystallographic alignment of high-density gallium nitride nanowire arrays journal, July 2004

Core/Multishell Nanowire Heterostructures as Multicolor, High-Efficiency Light-Emitting Diodes journal, November 2005

Equilibrium limits of coherency in strained nanowire heterostructures journal, June 2005

Dislocation Filtering in GaN Nanostructures journal, May 2010

Diameter-Dependent Electromechanical Properties of GaN Nanowires journal, February 2006

GaN nanowire lasers with low lasing thresholds journal, October 2005

Single gallium nitride nanowire lasers journal, September 2002

GaN Nanowire Arrays for High-Output Nanogenerators journal, April 2010

Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections journal, August 2003

Axial and radial growth of Ni-induced GaN nanowires journal, August 2007

Different growth rates for catalyst-induced and self-induced GaN nanowires journal, October 2010

Collector Phase Transitions during Vapor−Solid−Solid Nucleation of GaN Nanowires journal, August 2010

Controlled Modulation of Diameter and Composition along Individual III–V Nitride Nanowires journal, February 2012

Catalyst-Directed Crystallographic Orientation Control of GaN Nanowire Growth journal, November 2014

Controlling nanowire structures through real time growth studies journal, October 2010

Ledge-flow-controlled catalyst interface dynamics during Si nanowire growth journal, March 2008

Atomic-Scale Variability and Control of III-V Nanowire Growth Kinetics journal, January 2014

Straight and kinked InAs nanowire growth observed in situ by transmission electron microscopy journal, July 2014

Watching GaN Nanowires Grow journal, June 2003

Step-Flow Kinetics in Nanowire Growth journal, November 2010

The Au−Ga (Gold-Gallium) system journal, December 1981

Direct observation of nucleation and early stages of growth of GaN nanowires journal, February 2012

Kinetics of Individual Nucleation Events Observed in Nanoscale Vapor-Liquid-Solid Growth journal, November 2008

Formation of Metastable Liquid Catalyst during Subeutectic Growth of Germanium Nanowires journal, August 2010

Spatial Distribution of Defect Luminescence in GaN Nanowires journal, May 2010

In Situ TEM Electromechanical Testing of Nanowires and Nanotubes journal, August 2012

Vibrational and optical spectroscopies integrated with environmental transmission electron microscopy journal, March 2015

In Situ Nanomechanics of GaN Nanowires journal, April 2011

Theory of GaN ( 10 1 ¯ 0 ) and ( 11 2 ¯ 0 ) surfaces journal, April 1996

Control of Si Nanowire Growth by Oxygen journal, June 2006

Cyclic Supersaturation and Triple Phase Boundary Dynamics in Germanium Nanowire Growth journal, February 2011

Nucleation Antibunching in Catalyst-Assisted Nanowire Growth journal, March 2010

Deep level optical spectroscopy of GaN nanorods journal, September 2009

Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal–organic chemical vapour deposition journal, November 2006

Ultrafast growth of horizontal GaN nanowires by HVPE through flipping the substrate journal, January 2018

Crystal phase evolution in kinked GaN nanowires journal, January 2020

In Situ Environmental TEM in Imaging Gas and Liquid Phase Chemical Reactions for Materials Research journal, September 2016

In Situ Transmission Electron Microscopy book, January 2019

In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth journal, October 2019

In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth text, January 2019

Controlling bottom-up rapid growth of single crystalline gallium nitride nanowires on silicon journal, December 2017

Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
journal, April 1998

Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
journal, March 1994

GaN-Based RF Power Devices and Amplifiers
journal, February 2008

Gallium Nitride Nanowire Nanodevices
journal, February 2002

Crystallographic alignment of high-density gallium nitride nanowire arrays
journal, July 2004

Core/Multishell Nanowire Heterostructures as Multicolor, High-Efficiency Light-Emitting Diodes
journal, November 2005

Equilibrium limits of coherency in strained nanowire heterostructures
journal, June 2005

Dislocation Filtering in GaN Nanostructures
journal, May 2010

Diameter-Dependent Electromechanical Properties of GaN Nanowires
journal, February 2006

GaN nanowire lasers with low lasing thresholds
journal, October 2005

Single gallium nitride nanowire lasers
journal, September 2002

GaN Nanowire Arrays for High-Output Nanogenerators
journal, April 2010

Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections
journal, August 2003

Axial and radial growth of Ni-induced GaN nanowires
journal, August 2007

Different growth rates for catalyst-induced and self-induced GaN nanowires
journal, October 2010

Collector Phase Transitions during Vapor−Solid−Solid Nucleation of GaN Nanowires
journal, August 2010

Controlled Modulation of Diameter and Composition along Individual III–V Nitride Nanowires
journal, February 2012

Catalyst-Directed Crystallographic Orientation Control of GaN Nanowire Growth
journal, November 2014

Controlling nanowire structures through real time growth studies
journal, October 2010

Ledge-flow-controlled catalyst interface dynamics during Si nanowire growth
journal, March 2008

Atomic-Scale Variability and Control of III-V Nanowire Growth Kinetics
journal, January 2014

Straight and kinked InAs nanowire growth observed in situ by transmission electron microscopy
journal, July 2014

Watching GaN Nanowires Grow
journal, June 2003

Step-Flow Kinetics in Nanowire Growth
journal, November 2010

The Au−Ga (Gold-Gallium) system
journal, December 1981

Direct observation of nucleation and early stages of growth of GaN nanowires
journal, February 2012

Kinetics of Individual Nucleation Events Observed in Nanoscale Vapor-Liquid-Solid Growth
journal, November 2008

Formation of Metastable Liquid Catalyst during Subeutectic Growth of Germanium Nanowires
journal, August 2010

Spatial Distribution of Defect Luminescence in GaN Nanowires
journal, May 2010

In Situ TEM Electromechanical Testing of Nanowires and Nanotubes
journal, August 2012

Vibrational and optical spectroscopies integrated with environmental transmission electron microscopy
journal, March 2015

In Situ Nanomechanics of GaN Nanowires
journal, April 2011

Theory of $GaN (10 \bar{1} 0)$ and ( $11 \bar{2} 0$ ) surfaces
journal, April 1996

Control of Si Nanowire Growth by Oxygen
journal, June 2006

Cyclic Supersaturation and Triple Phase Boundary Dynamics in Germanium Nanowire Growth
journal, February 2011

Nucleation Antibunching in Catalyst-Assisted Nanowire Growth
journal, March 2010

Deep level optical spectroscopy of GaN nanorods
journal, September 2009

Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal–organic chemical vapour deposition
journal, November 2006

Ultrafast growth of horizontal GaN nanowires by HVPE through flipping the substrate
journal, January 2018

Crystal phase evolution in kinked GaN nanowires
journal, January 2020

In Situ Environmental TEM in Imaging Gas and Liquid Phase Chemical Reactions for Materials Research
journal, September 2016

In Situ Transmission Electron Microscopy
book, January 2019

In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth
journal, October 2019

In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth
text, January 2019

Controlling bottom-up rapid growth of single crystalline gallium nitride nanowires on silicon
journal, December 2017