Structural Flexibility and Alloying in Ultrathin Transition-Metal Chalcogenide Nanowires
Abstract
Metallic transition-metal chalcogenide (TMC) nanowires are an important building block for 2D electronics that may be fabricated within semiconducting transition-metal dichalcogenide (TMDC) monolayers. Tuning the geometric structure and electronic properties of such nanowires is a promising way to pattern diverse functional channels for wiring multiple units inside a 2D electronic circuit. However, few experimental investigations have been reported exploring the structural and compositional tunability of these nanowires, due to difficulties in manipulating the structure and chemical composition of an individual nanowire. Here, using a combination of scanning transmission electron microscopy (STEM) and density functional theory (DFT), we report that TMC nanowires have substantial intrinsic structural flexibility and their chemical composition can be manipulated. Rotational twisting, axial kinking, and branching of an individual nanowire is consistently observed and junctions with well-ordered atomic structures can be fabricated. We also show that the density of states of these nanowires can be finely tuned via alloying either the chalcogen or the transition-metal elements, where the chalcogen alloying can be further controlled by the acceleration voltage of the electron beam during the fabrication. The results open up the possibility of tailoring the properties of TMC nanowires, paving the way for robust ultrasmall interconnects in TMDC-basedmore »
- Authors:
-
- Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; National Inst. of Advanced Industrial Science and Technology (AIST), Tsukuba (Japan)
- Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS); Vanderbilt Univ., Nashville, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1240570
- Alternate Identifier(s):
- OSTI ID: 1597738
- Grant/Contract Number:
- AC05-00OR22725; FG02- 09ER46554; AC02-05CH11231; FG02-09ER46554
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ACS Nano
- Additional Journal Information:
- Journal Volume: 10; Journal Issue: 2; Journal ID: ISSN 1936-0851
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; metallic nanowire; alloying; transition metal dichalcogenide; structural flexibility; junctions; chemical constituent manipulation
Citation Formats
Lin, Junhao, Zhang, Yuyang, Zhou, Wu, and Pantelides, Sokrates T. Structural Flexibility and Alloying in Ultrathin Transition-Metal Chalcogenide Nanowires. United States: N. p., 2016.
Web. doi:10.1021/acsnano.5b07888.
Lin, Junhao, Zhang, Yuyang, Zhou, Wu, & Pantelides, Sokrates T. Structural Flexibility and Alloying in Ultrathin Transition-Metal Chalcogenide Nanowires. United States. https://doi.org/10.1021/acsnano.5b07888
Lin, Junhao, Zhang, Yuyang, Zhou, Wu, and Pantelides, Sokrates T. Mon .
"Structural Flexibility and Alloying in Ultrathin Transition-Metal Chalcogenide Nanowires". United States. https://doi.org/10.1021/acsnano.5b07888. https://www.osti.gov/servlets/purl/1240570.
@article{osti_1240570,
title = {Structural Flexibility and Alloying in Ultrathin Transition-Metal Chalcogenide Nanowires},
author = {Lin, Junhao and Zhang, Yuyang and Zhou, Wu and Pantelides, Sokrates T.},
abstractNote = {Metallic transition-metal chalcogenide (TMC) nanowires are an important building block for 2D electronics that may be fabricated within semiconducting transition-metal dichalcogenide (TMDC) monolayers. Tuning the geometric structure and electronic properties of such nanowires is a promising way to pattern diverse functional channels for wiring multiple units inside a 2D electronic circuit. However, few experimental investigations have been reported exploring the structural and compositional tunability of these nanowires, due to difficulties in manipulating the structure and chemical composition of an individual nanowire. Here, using a combination of scanning transmission electron microscopy (STEM) and density functional theory (DFT), we report that TMC nanowires have substantial intrinsic structural flexibility and their chemical composition can be manipulated. Rotational twisting, axial kinking, and branching of an individual nanowire is consistently observed and junctions with well-ordered atomic structures can be fabricated. We also show that the density of states of these nanowires can be finely tuned via alloying either the chalcogen or the transition-metal elements, where the chalcogen alloying can be further controlled by the acceleration voltage of the electron beam during the fabrication. The results open up the possibility of tailoring the properties of TMC nanowires, paving the way for robust ultrasmall interconnects in TMDC-based 2D flexible nanoelectronics.},
doi = {10.1021/acsnano.5b07888},
journal = {ACS Nano},
number = 2,
volume = 10,
place = {United States},
year = {Mon Jan 18 00:00:00 EST 2016},
month = {Mon Jan 18 00:00:00 EST 2016}
}
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