Telluride-Based Atomically Thin Layers of Ternary Two-Dimensional Transition Metal Dichalcogenide Alloys

doi:10.1021/acs.chemmater.8b03444

Title: Telluride-Based Atomically Thin Layers of Ternary Two-Dimensional Transition Metal Dichalcogenide Alloys

Abstract

Alloying in two-dimensional (2D) transition metal dichalcogenides (TMDCs) has allowed band gap engineering and phase transformation, as well as modulation of electronic properties. However, most of the efforts have been focused on alloying between transition metal cations. Among those that emphasize alloying between chalcogenide anions, the sulfide–selenide combinations are popular with a few reports on selenide–telluride combinations. In this work, we show a facile chemical vapor deposition method to obtain stable alloying between selenide and telluride anions in monolayer MoSe₂_(1–x)Te_2x alloy. These alloys retain the monolayer 2H symmetry and show good photoluminescence and band gap tunability in the near-infrared region. The nature and percentage of alloying is further confirmed and quantified via AFM, XPS, and HAADF-STEM imaging and polarized Raman spectroscopy. The stability of the two chalcogens in the monolayer 2H lattice is also consistent with thermodynamic phase mixing via DFT simulations. In conclusion, the work demonstrates a straightforward method of synthesizing telluride-based 2D TMDC alloys for further studies and emerging applications.

Authors:

Apte, Amey ^[1];

^[2];

^[3]; Susarla, Sandhya ^[1];

^[3];

^[2]; Kalia, Rajiv K. ^[2];

^[2];

^[4]; Ajayan, Pulickel M. ^[1]

Rice Univ., Houston, TX (United States)
Univ. of Southern California, Los Angeles, CA (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Rice Univ., Houston, TX (United States); Indian Institute of Technology, West Bengal (India)

Publication Date:: 2018-09-19

Research Org.:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1489547

Grant/Contract Number:: AC05-00OR22725

Resource Type:: Accepted Manuscript

Journal Name:: Chemistry of Materials

Additional Journal Information:: Journal Volume: 30; Journal Issue: 20; Journal ID: ISSN 0897-4756

Publisher:: American Chemical Society (ACS)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Apte, Amey, Krishnamoorthy, Aravind, Hachtel, Jordan Adam, Susarla, Sandhya, Idrobo, Juan Carlos, Nakano, Aiichiro, Kalia, Rajiv K., Vashishta, Priya, Tiwary, Chandra Sekhar, and Ajayan, Pulickel M. Telluride-Based Atomically Thin Layers of Ternary Two-Dimensional Transition Metal Dichalcogenide Alloys.  United States: N. p., 2018. 
        Web.  doi:10.1021/acs.chemmater.8b03444.

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                    Apte, Amey, Krishnamoorthy, Aravind, Hachtel, Jordan Adam, Susarla, Sandhya, Idrobo, Juan Carlos, Nakano, Aiichiro, Kalia, Rajiv K., Vashishta, Priya, Tiwary, Chandra Sekhar, & Ajayan, Pulickel M. Telluride-Based Atomically Thin Layers of Ternary Two-Dimensional Transition Metal Dichalcogenide Alloys.  United States.  doi:10.1021/acs.chemmater.8b03444.

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                    Apte, Amey, Krishnamoorthy, Aravind, Hachtel, Jordan Adam, Susarla, Sandhya, Idrobo, Juan Carlos, Nakano, Aiichiro, Kalia, Rajiv K., Vashishta, Priya, Tiwary, Chandra Sekhar, and Ajayan, Pulickel M. Wed .  
        "Telluride-Based Atomically Thin Layers of Ternary Two-Dimensional Transition Metal Dichalcogenide Alloys".  United States.  doi:10.1021/acs.chemmater.8b03444.  https://www.osti.gov/servlets/purl/1489547.

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@article{osti_1489547,

  title        = {Telluride-Based Atomically Thin Layers of Ternary Two-Dimensional Transition Metal Dichalcogenide Alloys},

  author       = {Apte, Amey and Krishnamoorthy, Aravind and Hachtel, Jordan Adam and Susarla, Sandhya and Idrobo, Juan Carlos and Nakano, Aiichiro and Kalia, Rajiv K. and Vashishta, Priya and Tiwary, Chandra Sekhar and Ajayan, Pulickel M.},

  abstractNote = {Alloying in two-dimensional (2D) transition metal dichalcogenides (TMDCs) has allowed band gap engineering and phase transformation, as well as modulation of electronic properties. However, most of the efforts have been focused on alloying between transition metal cations. Among those that emphasize alloying between chalcogenide anions, the sulfide–selenide combinations are popular with a few reports on selenide–telluride combinations. In this work, we show a facile chemical vapor deposition method to obtain stable alloying between selenide and telluride anions in monolayer MoSe2(1–x)Te2x alloy. These alloys retain the monolayer 2H symmetry and show good photoluminescence and band gap tunability in the near-infrared region. The nature and percentage of alloying is further confirmed and quantified via AFM, XPS, and HAADF-STEM imaging and polarized Raman spectroscopy. The stability of the two chalcogens in the monolayer 2H lattice is also consistent with thermodynamic phase mixing via DFT simulations. In conclusion, the work demonstrates a straightforward method of synthesizing telluride-based 2D TMDC alloys for further studies and emerging applications.},

  doi          = {10.1021/acs.chemmater.8b03444},

  journal      = {Chemistry of Materials},

  number       = 20,

  volume       = 30,

  place        = {United States},

  year         = {2018},

  month        = {9}

}

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Journal Article:

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DOI: 10.1021/acs.chemmater.8b03444

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Cited by: 7 works

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Figures / Tables:

Figure 1: Synthesis strategy of MoSe₂_(1‑x)Te_2xmonolayers: (a) Schematic of CVD growth of Te-doped MoSe₂ monolayers. (b) Raman spectra of Pure MoSe₂ and the Te-doped alloy samples. The increasing Te content is depicted alongside with changing morphologies of the monolayer flakes from optical micrographs (scale bars = 50 μm, 10more »

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Works referencing / citing this record:

Large-area synthesis of monolayer MoTe _x Se _2- _x alloys by chemical vapor deposition
journal, August 2019

Zhao, Shudong; Lu, Meilin; Xue, Shasha
Applied Physics Letters, Vol. 115, Issue 6
DOI: 10.1063/1.5102085

Direct/indirect band gap tunability in van der Waals heterojunctions based on ternary 2D materials Mo _{1− x} W _x Y ₂
journal, September 2019

Zhang, Mengjuan; Pan, Jiangling; Zhou, Wenzhe
Journal of Physics: Condensed Matter, Vol. 31, Issue 50
DOI: 10.1088/1361-648x/ab3f77

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Similar Records

Title: Telluride-Based Atomically Thin Layers of Ternary Two-Dimensional Transition Metal Dichalcogenide Alloys

Abstract

Citation Formats

Figures / Tables:

Large-area synthesis of monolayer MoTe x Se 2- x alloys by chemical vapor deposition journal, August 2019

Direct/indirect band gap tunability in van der Waals heterojunctions based on ternary 2D materials Mo 1− x W x Y 2 journal, September 2019

Large-area synthesis of monolayer MoTe _x Se _2- _x alloys by chemical vapor deposition
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Direct/indirect band gap tunability in van der Waals heterojunctions based on ternary 2D materials Mo _{1− x} W _x Y ₂
journal, September 2019