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Title: New insights gained on mechanisms of low-energy proton-induced SEUs by minimizing energy straggle

In this study, we present low-energy proton single-event upset (SEU) data on a 65 nm SOI SRAM whose substrate has been completely removed. Since the protons only had to penetrate a very thin buried oxide layer, these measurements were affected by far less energy loss, energy straggle, flux attrition, and angular scattering than previous datasets. The minimization of these common sources of experimental interference allows more direct interpretation of the data and deeper insight into SEU mechanisms. The results show a strong angular dependence, demonstrate that energy straggle, flux attrition, and angular scattering affect the measured SEU cross sections, and prove that proton direct ionization is the dominant mechanism for low-energy proton-induced SEUs in these circuits.
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [3] ;  [3] ;  [3] ;  [4] ;  [5] ;  [5]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. NRL consultant, Brookneal, VA (United States)
  3. Vanderbilt Univ., Nashville, TN (United States)
  4. NASA Goddard Space Flight Center, Greenbelt, MD (United States)
  5. IBM, T.J. Watson Research Center, Yorktown Heights, NY (United States)
Publication Date:
Report Number(s):
Journal ID: ISSN 0018-9499; 614052; TRN: US1600397
Grant/Contract Number:
Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 62; Journal Issue: 6; Journal ID: ISSN 0018-9499
Institute of Electrical and Electronics Engineers (IEEE)
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
74 ATOMIC AND MOLECULAR PHYSICS; single-event effects; low-energy proton; proton direct ionization; soft error rate prediction
OSTI Identifier: