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Title: GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

In this study, ammonia-based molecular beam epitaxy (NH 3-MBE) was used to grow catalyst-assisted GaN nanowires on (11¯02) r-plane sapphire substrates. Dislocation free [112¯0] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar {101¯0} side facets, which appear due to a decrease in relative growth rate of the {101¯0} facets to the {101¯1} and {101¯1} facets under the growth regime in NH 3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal–organic chemical vapor deposition, the NH 3-MBE grown GaN nanowires show more than an order of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Report Number(s):
SAND-2015-5926J
Journal ID: ISSN 0022-0248; 598527
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 427; Journal Issue: C; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; nanostructures; molecular beam epitaxy; nanomaterials; semiconducting III-V materials; light emitting diodes
OSTI Identifier:
1236245
Alternate Identifier(s):
OSTI ID: 1249626

Lin, Yong, Leung, Benjamin, Li, Qiming, Figiel, Jeffrey J., and Wang, George T.. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy. United States: N. p., Web. doi:10.1016/j.jcrysgro.2015.07.006.
Lin, Yong, Leung, Benjamin, Li, Qiming, Figiel, Jeffrey J., & Wang, George T.. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy. United States. doi:10.1016/j.jcrysgro.2015.07.006.
Lin, Yong, Leung, Benjamin, Li, Qiming, Figiel, Jeffrey J., and Wang, George T.. 2015. "GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy". United States. doi:10.1016/j.jcrysgro.2015.07.006. https://www.osti.gov/servlets/purl/1236245.
@article{osti_1236245,
title = {GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy},
author = {Lin, Yong and Leung, Benjamin and Li, Qiming and Figiel, Jeffrey J. and Wang, George T.},
abstractNote = {In this study, ammonia-based molecular beam epitaxy (NH3-MBE) was used to grow catalyst-assisted GaN nanowires on (11¯02) r-plane sapphire substrates. Dislocation free [112¯0] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar {101¯0} side facets, which appear due to a decrease in relative growth rate of the {101¯0} facets to the {101¯1} and {101¯1} facets under the growth regime in NH3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal–organic chemical vapor deposition, the NH3-MBE grown GaN nanowires show more than an order of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.},
doi = {10.1016/j.jcrysgro.2015.07.006},
journal = {Journal of Crystal Growth},
number = C,
volume = 427,
place = {United States},
year = {2015},
month = {7}
}