GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy
Abstract
In this study, ammonia-based molecular beam epitaxy (NH3-MBE) was used to grow catalyst-assisted GaN nanowires on (11¯02) r-plane sapphire substrates. Dislocation free [112¯0] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar {101¯0} side facets, which appear due to a decrease in relative growth rate of the {101¯0} facets to the {101¯1} and {101¯1} facets under the growth regime in NH3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal–organic chemical vapor deposition, the NH3-MBE grown GaN nanowires show more than an order of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.
- Authors:
-
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1236245
- Alternate Identifier(s):
- OSTI ID: 1249626
- Report Number(s):
- SAND-2015-5926J
Journal ID: ISSN 0022-0248; 598527
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Crystal Growth
- Additional Journal Information:
- Journal Volume: 427; Journal Issue: C; Journal ID: ISSN 0022-0248
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; nanostructures; molecular beam epitaxy; nanomaterials; semiconducting III-V materials; light emitting diodes
Citation Formats
Lin, Yong, Leung, Benjamin, Li, Qiming, Figiel, Jeffrey J., and Wang, George T. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy. United States: N. p., 2015.
Web. doi:10.1016/j.jcrysgro.2015.07.006.
Lin, Yong, Leung, Benjamin, Li, Qiming, Figiel, Jeffrey J., & Wang, George T. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy. United States. https://doi.org/10.1016/j.jcrysgro.2015.07.006
Lin, Yong, Leung, Benjamin, Li, Qiming, Figiel, Jeffrey J., and Wang, George T. Tue .
"GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy". United States. https://doi.org/10.1016/j.jcrysgro.2015.07.006. https://www.osti.gov/servlets/purl/1236245.
@article{osti_1236245,
title = {GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy},
author = {Lin, Yong and Leung, Benjamin and Li, Qiming and Figiel, Jeffrey J. and Wang, George T.},
abstractNote = {In this study, ammonia-based molecular beam epitaxy (NH3-MBE) was used to grow catalyst-assisted GaN nanowires on (11¯02) r-plane sapphire substrates. Dislocation free [112¯0] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar {101¯0} side facets, which appear due to a decrease in relative growth rate of the {101¯0} facets to the {101¯1} and {101¯1} facets under the growth regime in NH3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal–organic chemical vapor deposition, the NH3-MBE grown GaN nanowires show more than an order of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.},
doi = {10.1016/j.jcrysgro.2015.07.006},
journal = {Journal of Crystal Growth},
number = C,
volume = 427,
place = {United States},
year = {Tue Jul 14 00:00:00 EDT 2015},
month = {Tue Jul 14 00:00:00 EDT 2015}
}
Web of Science