Influence of Mn concentration on magnetic topological insulator MnxBi2−xTe3 thin-film Hall-effect sensor

Ni, Y.; Zhang, Z.; Nlebedim, I. C.; Hadimani, R. L.; Jiles, D. C.

doi:10.1109/TMAG.2015.2444378

Title: Influence of Mn concentration on magnetic topological insulator Mn_xBi_2−xTe₃ thin-film Hall-effect sensor

Abstract

Hall-effect (HE) sensors based on high-quality Mn-doped Bi₂Te₃ topological insulator (TI) thin films have been systematically studied in this paper. Improvement of Hall sensitivity is found after doping the magnetic element Mn into Bi₂Te₃. The sensors with low Mn concentrations, Mn_xBi_2-xTe₃, x = 0.01 and 0.08 show the linear behavior of Hall resistance with sensitivity about 5 Ω/T. And their Hall sensitivity shows weak dependence on temperature. For sensors with high Mn concentration (x = 0.23), the Hall resistance with respect to magnetic field shows a hysteretic behavior. Moreover, its sensitivity shows almost eight times as high as that of the HE sensors with low Mn concentration. The highest sensitivity can reach 43 Ω/T at very low magnetic field. This increase of Hall sensitivity is caused by the occurrence of anomalous HE (AHE) after ferromagnetic phase transition. Our work indicates that the magnetic-element-doped TIs with AHE are good candidates for HE sensors.

Authors:

Ni, Y. ^[1]; Zhang, Z. ^[1]; Nlebedim, I. C. ^[2]; Hadimani, R. L. ^[1]; Jiles, D. C. ^[1]

Iowa State Univ., Ames, IA (United States)
Iowa State Univ., Ames, IA (United States); Ames Lab. (AMES), Ames, IA (United States)

Publication Date:: Thu Jun 11 00:00:00 EDT 2015

Research Org.:: Ames Lab., Ames, IA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1234460

Report Number(s):: IS-J-8870
Journal ID: ISSN 0018-9464

Grant/Contract Number:: AC02-07CH11358

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Transactions on Magnetics

Additional Journal Information:: Journal Volume: 51; Journal Issue: 11; Journal ID: ISSN 0018-9464

Publisher:: Institute of Electrical and Electronics Engineers. Magnetics Group

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Hall effect devices; topological insulators; thin films; sensitivity

Citation Formats


                    Ni, Y., Zhang, Z., Nlebedim, I. C., Hadimani, R. L., and Jiles, D. C. Influence of Mn concentration on magnetic topological insulator MnxBi2−xTe3 thin-film Hall-effect sensor.  United States: N. p., 2015. 
Web.  doi:10.1109/TMAG.2015.2444378.

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                    Ni, Y., Zhang, Z., Nlebedim, I. C., Hadimani, R. L., & Jiles, D. C. Influence of Mn concentration on magnetic topological insulator MnxBi2−xTe3 thin-film Hall-effect sensor.  United States.  https://doi.org/10.1109/TMAG.2015.2444378

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                    Ni, Y., Zhang, Z., Nlebedim, I. C., Hadimani, R. L., and Jiles, D. C. Thu .  
"Influence of Mn concentration on magnetic topological insulator MnxBi2−xTe3 thin-film Hall-effect sensor".  United States.  https://doi.org/10.1109/TMAG.2015.2444378.  https://www.osti.gov/servlets/purl/1234460.

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@article{osti_1234460,

  title        = {Influence of Mn concentration on magnetic topological insulator MnxBi2−xTe3 thin-film Hall-effect sensor},

  author       = {Ni, Y. and Zhang, Z. and Nlebedim, I. C. and Hadimani, R. L. and Jiles, D. C.},

  abstractNote = {Hall-effect (HE) sensors based on high-quality Mn-doped Bi2Te3 topological insulator (TI) thin films have been systematically studied in this paper. Improvement of Hall sensitivity is found after doping the magnetic element Mn into Bi2Te3. The sensors with low Mn concentrations, MnxBi2-xTe3, x = 0.01 and 0.08 show the linear behavior of Hall resistance with sensitivity about 5 Ω/T. And their Hall sensitivity shows weak dependence on temperature. For sensors with high Mn concentration (x = 0.23), the Hall resistance with respect to magnetic field shows a hysteretic behavior. Moreover, its sensitivity shows almost eight times as high as that of the HE sensors with low Mn concentration. The highest sensitivity can reach 43 Ω/T at very low magnetic field. This increase of Hall sensitivity is caused by the occurrence of anomalous HE (AHE) after ferromagnetic phase transition. Our work indicates that the magnetic-element-doped TIs with AHE are good candidates for HE sensors.},

  doi          = {10.1109/TMAG.2015.2444378},

  journal      = {IEEE Transactions on Magnetics},

  number       = 11,

  volume       = 51,

  place        = {United States},

  year         = {Thu Jun 11 00:00:00 EDT 2015},

  month        = {Thu Jun 11 00:00:00 EDT 2015}

}

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Title: Influence of Mn concentration on magnetic topological insulator MnxBi2−xTe3 thin-film Hall-effect sensor

Abstract

Citation Formats

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