Synthesis and characterization of antiperovskite nitrides GaNCr{sub 3−x}Mn{sub x}
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)
The effects of Mn-doping on the crystal structure, magnetic and electrical/thermal transport properties of GaNCr{sub 3−x}Mn{sub x} (0≤x≤1.5) have been investigated systematically. As a result, the lattice constant and the residual resistivity increase, while the residual resistivity ratio, electron thermal conductivity, and room-temperature carrier concentration decrease with increasing Mn-doping level. The ground state of parent compound GaNCr{sub 3} is nonmagnetic, interestingly, the ferrimagnetism and antiferromagnetism are observed in Mn-doped samples GaNCr{sub 3−x}Mn{sub x}. Correspondingly, around the antiferromagnetic transition of GaNCr{sub 3−x}Mn{sub x} the correlation effect is studied. Furthermore, the analysis of thermal conductivity data suggests that the electron thermal conductivity plays a major role in total thermal conductivity of GaNCr{sub 3} at low temperatures, while the phonon thermal conductivity is dominant for Mn-doped GaNCr{sub 3} in the whole temperature of 5–330 K. The positive values of Seebeck coefficient and Hall coefficient indicate that the nature of charge carrier is hole-type in GaNCr{sub 3−x}Mn{sub x}. - Graphical abstract: The Rietveld refinement and structural properties of GaNCr{sub 3−x}Mn{sub x}. Display Omitted - Highlights: • Polycrystalline GaNCr{sub 3−x}Mn{sub x} are synthesized by using the solid state reaction method. • A good quality of samples is verified by Rietveld refinement and RRR values. • Antiferromagnetic and ferromagnetic competitions are induced by Mn-doping. • We present a comprehensive understanding of physical properties of GaNCr{sub 3−x}Mn{sub x}.
- OSTI ID:
- 22274185
- Journal Information:
- Journal of Solid State Chemistry, Vol. 209; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
- Country of Publication:
- United States
- Language:
- English
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