H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells
- Authors:
-
- Imec, Kapeldreef 75, B-3001 Leuven, Belgium
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1228568
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Name: Journal of Applied Physics Journal Volume: 117 Journal Issue: 12; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Goux, L., Kim, J. Y., Magyari-Kope, B., Nishi, Y., Redolfi, A., and Jurczak, M. H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells. United States: N. p., 2015.
Web. doi:10.1063/1.4915946.
Goux, L., Kim, J. Y., Magyari-Kope, B., Nishi, Y., Redolfi, A., & Jurczak, M. H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells. United States. https://doi.org/10.1063/1.4915946
Goux, L., Kim, J. Y., Magyari-Kope, B., Nishi, Y., Redolfi, A., and Jurczak, M. Mon .
"H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells". United States. https://doi.org/10.1063/1.4915946.
@article{osti_1228568,
title = {H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells},
author = {Goux, L. and Kim, J. Y. and Magyari-Kope, B. and Nishi, Y. and Redolfi, A. and Jurczak, M.},
abstractNote = {},
doi = {10.1063/1.4915946},
journal = {Journal of Applied Physics},
number = 12,
volume = 117,
place = {United States},
year = {Mon Mar 23 00:00:00 EDT 2015},
month = {Mon Mar 23 00:00:00 EDT 2015}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1063/1.4915946
https://doi.org/10.1063/1.4915946
Other availability
Cited by: 17 works
Citation information provided by
Web of Science
Web of Science
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO 2 , NiO and Pr 0.7 Ca 0.3 MnO 3
journal, May 2011
- Magyari-Köpe, Blanka; Tendulkar, Mihir; Park, Seong-Geon
- Nanotechnology, Vol. 22, Issue 25
Projector augmented-wave method
journal, December 1994
- Blöchl, P. E.
- Physical Review B, Vol. 50, Issue 24, p. 17953-17979
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996
- Kresse, G.; Furthmüller, J.
- Computational Materials Science, Vol. 6, Issue 1, p. 15-50
Asymmetry and Switching Phenomenology in TiN\(Al2O3)\HfO2\Hf Systems
journal, January 2012
- Goux, L.; Fantini, A.; Govoreanu, B.
- ECS Solid State Letters, Vol. 1, Issue 4
Role of the anode material in the unipolar switching of TiN\NiO\Ni cells
journal, February 2013
- Goux, L.; Degraeve, R.; Meersschaut, J.
- Journal of Applied Physics, Vol. 113, Issue 5
Study of the atomic models of three donorlike defects in silicon metal‐oxide‐semiconductor structures from their gate material and process dependencies
journal, March 1984
- Sah, Chih‐Tang; Sun, Jack Yuan‐Chen; Tzou, Joseph Jeng‐Tao
- Journal of Applied Physics, Vol. 55, Issue 6
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996
- Kresse, G.; Furthmüller, J.
- Physical Review B, Vol. 54, Issue 16, p. 11169-11186
From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999
- Kresse, G.; Joubert, D.
- Physical Review B, Vol. 59, Issue 3, p. 1758-1775
On the Gradual Unipolar and Bipolar Resistive Switching of TiN\HfO[sub 2]\Pt Memory Systems
journal, January 2010
- Goux, L.; Chen, Y. -Y; Pantisano, L.
- Electrochemical and Solid-State Letters, Vol. 13, Issue 6
Three-dimensional 4F2 ReRAM cell with CMOS logic compatible process
conference, December 2010
- Ching-Hua Wang,
- 2010 IEEE International Electron Devices Meeting (IEDM), 2010 International Electron Devices Meeting
An inelastic neutron scattering study of the proton dynamics in γ-MnO2
journal, January 1991
- Fillaux, F.; Ouboumour, H.; Tomkinson, J.
- Chemical Physics, Vol. 149, Issue 3
10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
conference, December 2011
- Govoreanu, B.; Kar, G. S.; Chen, Y-Y.
- 2011 IEEE International Electron Devices Meeting (IEDM), 2011 International Electron Devices Meeting
Hydrogen as a Cause of Doping in Zinc Oxide
journal, July 2000
- Van de Walle, Chris G.
- Physical Review Letters, Vol. 85, Issue 5
Defects and transport properties of metal oxides
journal, August 1995
- Kofstad, Per
- Oxidation of Metals, Vol. 44, Issue 1-2
Impact of hydrogen on the electroforming of Pr0.7 Ca0.3 MnO3 resistance-change memory devices
conference, October 2009
- Tendulkara, M. P.; Jameson, J. R.; Griffin, P. B.
- 2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS 2009), 2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS)
Evidences of Electrode-Controlled Retention Properties in Ta2O5-Based Resistive-Switching Memory Cells
journal, January 2014
- Goux, L.; Fantini, A.; Chen, Y. Y.
- ECS Solid State Letters, Vol. 3, Issue 11
Oxide-based protonic conductors: point defects and transport properties
journal, December 2001
- Bonanos, N.
- Solid State Ionics, Vol. 145, Issue 1-4
Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF hydrogen and deuterium plasma treatment
journal, November 2008
- Efthymiou, E.; Bernardini, S.; Zhang, J. F.
- Thin Solid Films, Vol. 517, Issue 1
Hydrogen-Induced Resistive Switching in TiN/ALD $ \hbox{HfO}_{2}$/PEALD TiN RRAM Device
journal, April 2012
- Chen, Yang Yin; Goux, L.; Swerts, J.
- IEEE Electron Device Letters, Vol. 33, Issue 4
Distribution of hydrogen in the NPL standard ta2O5 films
journal, July 1986
- Bishop, H. E.
- Surface and Interface Analysis, Vol. 9, Issue 2
Conductive filament scaling of TaOx bipolar ReRAM for long retention with low current operation
conference, June 2012
- Ninomiya, T.; Takagi, T.; Wei, Z.
- 2012 IEEE Symposium on VLSI Technology, 2012 Symposium on VLSI Technology (VLSIT)
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
journal, July 2011
- Lee, Myoung-Jae; Lee, Chang Bum; Lee, Dongsoo
- Nature Materials, Vol. 10, Issue 8, p. 625-630
Proton Conductivity: Materials and Applications
journal, January 1996
- Kreuer, Klaus-Dieter
- Chemistry of Materials, Vol. 8, Issue 3
Electronic correlation effects in reduced rutile within the method
journal, September 2010
- Park, Seong-Geon; Magyari-Köpe, Blanka; Nishi, Yoshio
- Physical Review B, Vol. 82, Issue 11
Electronic structure and stability of low symmetry Ta 2 O 5 polymorphs : Electronic structure and stability of low symmetry Ta
journal, May 2014
- Kim, Ja-Yong; Magyari-Köpe, Blanka; Lee, Kee-Jeung
- physica status solidi (RRL) - Rapid Research Letters, Vol. 8, Issue 6
Concentration and transport of protons in oxides
journal, October 1997
- Norby, Truls; Larring, Yngve
- Current Opinion in Solid State and Materials Science, Vol. 2, Issue 5