Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory

Journal Article · Mon May 05 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4875748· OSTI ID:22269192

Fang, Runchen; Yu, Shimeng ^[1]; Gonzalez Velo, Yago; Chen, Wenhao; Holbert, Keith E.; Kozicki, Michael N.; Barnaby, Hugh ^[2]

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1. School of Computing, Informatics, and Decision Systems Engineering, Arizona State University, Tempe, Arizona 85281 (United States)
2. School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States)

The total ionizing dose (TID) effect of gamma-ray (γ-ray) irradiation on HfOx based resistive random access memory was investigated by electrical and material characterizations. The memory states can sustain TID level ∼5.2 Mrad (HfO{sub 2}) without significant change in the functionality or the switching characteristics under pulse cycling. However, the stability of the filament is weakened after irradiation as memory states are more vulnerable to flipping under the electrical stress. X-ray photoelectron spectroscopy was performed to ascertain the physical mechanism of the stability degradation, which is attributed to the Hf-O bond breaking by the high-energy γ-ray exposure.

• OSTI ID: 22269192
• Journal Information: Applied Physics Letters, Vol. 104, Issue 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GAMMA RADIATION
HAFNIUM OXIDES
IRRADIATION
TITANIUM HYDRIDES
X-RAY PHOTOELECTRON SPECTROSCOPY