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Title: Anisotropic Fermi surface and quantum limit transport in high mobility three-dimensional Dirac semimetal Cd3As2

Three-dimensional topological Dirac semimetals have a linear dispersion in 3D momentum space and are viewed as the 3D analogues of graphene. Here, we report angle-dependent magnetotransport on the newly revealed Cd3As2 single crystals and clearly show how the Fermi surface evolves with crystallographic orientations. Remarkably, when the magnetic field lies in the [112] or [441¯] axis, magnetoresistance oscillations with only single period are present. However, the oscillation shows double periods when the field is applied along the [11¯0] direction. Moreover, aligning the magnetic field at certain directions also gives rise to double period oscillations. We attribute the observed anomalous oscillation behavior to the sophisticated geometry of Fermi surface and illustrate a complete 3D Fermi surface with two nested anisotropic ellipsoids around the Dirac points. Additionally, a submillimeter mean-free path at 6 K is found in Cd3As2 crystals, indicating ballistic transport in this material. By measuring the magnetoresistance up to 60 T, we reach the quantum limit (n = 1 Landau level) at about 43 T. These results improve the knowledge of the Dirac semimetal material Cd3As2 also pave the way for proposing new electronic applications based on 3D Dirac materials.
 [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [2] ;  [1] ;  [1] ;  [3] ;  [3] ;  [4] ;  [5] ;  [1] ;  [1] ;  [1]
  1. Peking Univ., Beijing (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)
  2. Huazhong Univ. of Science and Technology, Wuhan (China)
  3. Zhejiang Univ., Hangzhou (China)
  4. Argonne National Lab. (ANL), Argonne, IL (United States)
  5. Argonne National Lab. (ANL), Argonne, IL (United States); Northern Illinois Univ., Dekalb, IL (United States)
Publication Date:
Grant/Contract Number:
AC02-06CH11357; 11222434; 11534001; 11174007; 2013CB934600; 2015CB921102; 2012CB921300
Published Article
Journal Name:
Physical Review. X
Additional Journal Information:
Journal Volume: 5; Journal Issue: 3; Journal ID: ISSN 2160-3308
American Physical Society
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
36 MATERIALS SCIENCE; condensed matter physics; electronics; materials science
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1221641