Pressure-induced structures of Si-doped HfO2
Abstract
In this work, the effect of hydrostatic pressure on the structure of Si-doped HfO2 (Si:HfO2) was studied by using a diamond anvil cell in combination with high-energy X-ray diffraction at a synchrotron source. Diffraction data were measured in situ during compression up to pressures of 31 GPa. Si:HfO2 with 3, 5, and 9 at.% Si were found to undergo a monoclinic to orthorhombic transition at pressures between 7 and 15 GPa. Whole pattern analysis was carried out using nonpolar (Pbca) and polar (Pca21) crystallographic models to investigate the symmetry of the observed high-pressure orthorhombic phase. Rietveld refinement results cannot discriminate a reliable difference between the Pbca and Pca21 structures as they nearly equally model the measured diffraction data. The pressure dependent lattice parameters, relative volume, and spontaneous strain are reported.
- Authors:
-
[1];
- North Carolina State Univ., Raleigh, NC (United States)
- North Carolina State Univ., Raleigh, NC (United States); Northwest Univ., Xi’an (China)
- Carnegie Inst. of Washington, Argonne, IL (United States). HPCAT, Geophysical Lab.
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division
- OSTI Identifier:
- 1186933
- Alternate Identifier(s):
- OSTI ID: 1228275
- Grant/Contract Number:
- NA0001974; FG02-99ER45775; AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 117; Journal Issue: 23; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- ENGLISH
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Fancher, Chris M., Zhao, Lili, Nelson, Matthew, Bai, Ligang, Shen, Guoyin, and Jones, Jacob L. Pressure-induced structures of Si-doped HfO2. United States: N. p., 2015.
Web. doi:10.1063/1.4922717.
Fancher, Chris M., Zhao, Lili, Nelson, Matthew, Bai, Ligang, Shen, Guoyin, & Jones, Jacob L. Pressure-induced structures of Si-doped HfO2. United States. https://doi.org/10.1063/1.4922717
Fancher, Chris M., Zhao, Lili, Nelson, Matthew, Bai, Ligang, Shen, Guoyin, and Jones, Jacob L. Thu .
"Pressure-induced structures of Si-doped HfO2". United States. https://doi.org/10.1063/1.4922717. https://www.osti.gov/servlets/purl/1186933.
@article{osti_1186933,
title = {Pressure-induced structures of Si-doped HfO2},
author = {Fancher, Chris M. and Zhao, Lili and Nelson, Matthew and Bai, Ligang and Shen, Guoyin and Jones, Jacob L.},
abstractNote = {In this work, the effect of hydrostatic pressure on the structure of Si-doped HfO2 (Si:HfO2) was studied by using a diamond anvil cell in combination with high-energy X-ray diffraction at a synchrotron source. Diffraction data were measured in situ during compression up to pressures of 31 GPa. Si:HfO2 with 3, 5, and 9 at.% Si were found to undergo a monoclinic to orthorhombic transition at pressures between 7 and 15 GPa. Whole pattern analysis was carried out using nonpolar (Pbca) and polar (Pca21) crystallographic models to investigate the symmetry of the observed high-pressure orthorhombic phase. Rietveld refinement results cannot discriminate a reliable difference between the Pbca and Pca21 structures as they nearly equally model the measured diffraction data. The pressure dependent lattice parameters, relative volume, and spontaneous strain are reported.},
doi = {10.1063/1.4922717},
journal = {Journal of Applied Physics},
number = 23,
volume = 117,
place = {United States},
year = {Thu Jun 18 00:00:00 EDT 2015},
month = {Thu Jun 18 00:00:00 EDT 2015}
}
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Works referencing / citing this record:
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