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Title: Structure of HfO2 modified with Y, Gd, and Zr at ambient conditions and high pressures

Journal Article · · Journal of Applied Physics
DOI: https://doi.org/10.1063/1.5121024 · OSTI ID:1607279

High-resolution and high-pressure X-ray diffraction measurements were performed to determine the effects of 5% Y, 3% Gd, and 50% Zr substitution on the crystal structure and polymorphism of HfO2. High-resolution experiments at ambient pressure show a mixture of monoclinic and cubic fluorite phases in 5% Y:HfO2 and 3% Gd:HfO2, while 50% Zr:HfO2 formed a monoclinic, single-phase solid solution. Crystallographic refinement using the Rietveld method indicates that Y and Gd substitute for Hf in both the monoclinic and cubic phases. High-pressure X-ray diffraction was performed in situ up to 31 GPa and shows that the pressure-induced phase transitions were reduced with the addition of either Y, Gd, or Zr relative to the transition pressures in undoped HfO2. Finally, the pressure-induced changes in lattice parameter, relative volume, and spontaneous strain are reported.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES); Army Research Office (USARO)
Grant/Contract Number:
AC05-00OR22725; NA0001974; FG02-99ER45775; AC02-06CH11357; W911NF-15-1-0593
OSTI ID:
1607279
Alternate ID(s):
OSTI ID: 1575803
Journal Information:
Journal of Applied Physics, Vol. 126, Issue 20; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 3 works
Citation information provided by
Web of Science

References (37)

Hafnia and hafnia-toughened ceramics journal January 1992
Ferroelectric HfO 2 -based materials for next-generation ferroelectric memories journal June 2016
Phase relationships in the Hafnia-Gadolinia system journal October 1977
Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2 journal October 2013
Pressure-induced phase transitions and volume changes in HfO 2 up to 50 GPa journal July 1993
Crystal Structure of Monoclinic Hafnia and Comparison with Monoclinic Zirconia journal March 1970
Ferroelectricity in Si-Doped HfO 2 Revealed: A Binary Lead-Free Ferroelectric journal October 2014
Hafnium Oxide Based CMOS Compatible Ferroelectric Materials journal January 2013
Impact of different dopants on the switching properties of ferroelectric hafniumoxide journal July 2014
EXPGUI , a graphical user interface for GSAS journal April 2001
Ferroelectric Zr 0.5 Hf 0.5 O 2 thin films for nonvolatile memory applications journal September 2011
On the structural origins of ferroelectricity in HfO 2 thin films journal April 2015
Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties journal August 2012
Relative stability of ZrO 2 and HfO 2 structural phases journal December 1999
Crystal Structure of Orthorhombic Zirconia in Partially Stabilized Zirconia journal September 1989
Cation doping and oxygen diffusion in zirconia: a combined atomistic simulation and molecular dynamics study journal January 1998
Processing and crystallographic structure of non-equilibrium Si-doped HfO 2 journal June 2015
Incipient Ferroelectricity in Al-Doped HfO2 Thin Films journal March 2012
Ferroelectricity in Gd-Doped HfO 2 Thin Films journal January 2012
Flexible Inorganic Ferroelectric Thin Films for Nonvolatile Memory Devices journal April 2017
Crystal structure of Si-doped HfO 2 journal January 2014
Pathways towards ferroelectricity in hafnia journal August 2014
Pressure-induced structures of Si-doped HfO2 journal June 2015
Ferroelectricity and Antiferroelectricity of Doped Thin HfO 2 -Based Films journal February 2015
Antiferroelectricity in thin-film ZrO 2 from first principles journal October 2014
Ferroelectricity in hafnium oxide thin films journal September 2011
First-principles study of the structural phase transformation of hafnia under pressure journal August 2003
A comprehensive study on the structural evolution of HfO 2 thin films doped with various dopants journal January 2017
The origin of ferroelectricity in Hf 1−x Zr x O 2 : A computational investigation and a surface energy model journal April 2015
Ferroelectricity in yttrium-doped hafnium oxide journal December 2011
Neutron Diffraction Studies of Phase Transformations between Tetragonal and Orthorhombic Zirconia in Magnesia-Partially-Stabilized Zirconia journal October 1990
Growth of epitaxial orthorhombic YO 1.5 -substituted HfO 2 thin film journal July 2015
Structure of 3 at.% and 9 at.% Si-doped HfO2 from combined refinement of X-ray and neutron diffraction patterns journal October 2015
Spontaneous strain and the ferroelastic phase transition in As 2 O 5 journal January 1988
Ferroelectricity in Simple Binary ZrO 2 and HfO 2 journal July 2012
Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO 2 conference March 2012
Pathways Towards Ferroelectricity in Hafnia text January 2014