Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K.; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J.; Kalinin, Sergei V.; Lai, Keji; Demkov, Alexander A.

doi:10.1038/ncomms7067

Title: Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

Abstract

The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.

Authors:

Ponath, Patrick ^[1]; Fredrickson, Kurt ^[1]; Posadas, Agham B. ^[1]; Ren, Yuan ^[1]; Vasudevan, Rama K. ^[2]; Okatan, Mahmut Baris ^[2]; Jesse, Stephen ^[2]; Aoki, Toshihiro ^[3]; McCartney, Martha ^[3]; Smith, David J. ^[3]; Kalinin, Sergei V. ^[2]; Lai, Keji ^[1]; Demkov, Alexander A. ^[1]

Univ. of Texas, Austin, TX (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Arizona State Univ., Mesa, AZ (United States)

Publication Date:: Wed Jan 14 00:00:00 EST 2015

Research Org.:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Org.:: USDOE Office of Science (SC)

OSTI Identifier:: 1185502

Grant/Contract Number:: AC05-00OR22725

Resource Type:: Accepted Manuscript

Journal Name:: Nature Communications

Additional Journal Information:: Journal Volume: 6; Journal ID: ISSN 2041-1723

Publisher:: Nature Publishing Group

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; Ferroelectric; PFM; Barium Titanate; Field-Effect

Citation Formats


                    Ponath, Patrick, Fredrickson, Kurt, Posadas, Agham B., Ren, Yuan, Vasudevan, Rama K., Okatan, Mahmut Baris, Jesse, Stephen, Aoki, Toshihiro, McCartney, Martha, Smith, David J., Kalinin, Sergei V., Lai, Keji, and Demkov, Alexander A. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching.  United States: N. p., 2015. 
Web.  doi:10.1038/ncomms7067.

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                    Ponath, Patrick, Fredrickson, Kurt, Posadas, Agham B., Ren, Yuan, Vasudevan, Rama K., Okatan, Mahmut Baris, Jesse, Stephen, Aoki, Toshihiro, McCartney, Martha, Smith, David J., Kalinin, Sergei V., Lai, Keji, & Demkov, Alexander A. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching.  United States.  https://doi.org/10.1038/ncomms7067

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                    Ponath, Patrick, Fredrickson, Kurt, Posadas, Agham B., Ren, Yuan, Vasudevan, Rama K., Okatan, Mahmut Baris, Jesse, Stephen, Aoki, Toshihiro, McCartney, Martha, Smith, David J., Kalinin, Sergei V., Lai, Keji, and Demkov, Alexander A. Wed .  
"Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching".  United States.  https://doi.org/10.1038/ncomms7067.  https://www.osti.gov/servlets/purl/1185502.

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@article{osti_1185502,

  title        = {Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching},

  author       = {Ponath, Patrick and Fredrickson, Kurt and Posadas, Agham B. and Ren, Yuan and Vasudevan, Rama K. and Okatan, Mahmut Baris and Jesse, Stephen and Aoki, Toshihiro and McCartney, Martha and Smith, David J. and Kalinin, Sergei V. and Lai, Keji and Demkov, Alexander A.},

  abstractNote = {The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.},

  doi          = {10.1038/ncomms7067},

  journal      = {Nature Communications},

  number       = ,

  volume       = 6,

  place        = {United States},

  year         = {Wed Jan 14 00:00:00 EST 2015},

  month        = {Wed Jan 14 00:00:00 EST 2015}

}

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Title: Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

Abstract

Citation Formats

Epitaxy of BaTiO3 thin film on Si(001) using a SrTiO3 buffer layer for non-volatile memory application journal, July 2011

Molecular beam epitaxy growth of epitaxial barium silicide, barium oxide, and barium titanate on silicon journal, August 1991

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Academic and industry research progress in germanium nanodevices journal, November 2011

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A Ferroelectric Oxide Made Directly on Silicon journal, April 2009

Ferroelectric Field Effect Transistors for Memory Applications journal, April 2010

Molecular beam epitaxial growth of BaTiO3 single crystal on Ge-on-Si(001) substrates journal, February 2011

Special points for Brillouin-zone integrations journal, June 1976

Theory of polarization enhancement in epitaxial BaTiO3/SrTiO3 superlattices journal, March 2003

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal, October 1996

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Epitaxial oxide thin films on Si(001) journal, January 2000

Batch-fabricated cantilever probes with electrical shielding for nanoscale dielectric and conductivity imaging journal, October 2012

Epitaxial growth and strain relaxation of BaTiO[sub 3] thin films on SrTiO[sub 3] buffered (001) Si by molecular beam epitaxy journal, January 2007

Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide journal, July 2001

A Chemical Route to Monolithic Integration of Crystalline Oxides on Semiconductors journal, May 2014

Atomic and electronic structure of the ferroelectric BaTiO 3 /Ge(001) interface journal, June 2014

Heteroepitaxial growth of BaTiO 3 films on Si by pulsed laser deposition journal, March 1995

Evidence of Trigonal Dangling Bonds at the Ge(111)/Oxide Interface by Electrically Detected Magnetic Resonance journal, May 2013

Nanoscale microwave microscopy using shielded cantilever probes journal, April 2011

c-axis oriented epitaxial BaTiO3 films on (001) Si journal, July 2006

n -Type Doping of Germanium from Phosphine: Early Stages Resolved at the Atomic Level journal, August 2012

Hysteretic electrical transport in BaTiO 3 /Ba 1− x Sr x TiO 3 /Ge heterostructures journal, February 2014

Self-interaction correction to density-functional approximations for many-electron systems journal, May 1981

The surface science of titanium dioxide journal, January 2003

Properties of epitaxial BaTiO 3 deposited on GaAs journal, January 2013

Modeling and characterization of a cantilever-based near-field scanning microwave impedance microscope journal, June 2008

Epitaxial growth of Pb(Zr0.2Ti0.8)O3 on Si and its nanoscale piezoelectric properties journal, April 2001

Ge based high performance nanoscale MOSFETs journal, June 2005

Scanning Near-Field Microwave Microscopy of VO 2 and Chemical Vapor Deposition Graphene journal, April 2013

Electrical properties of ferroelectric BaTiO3 thin film on SrTiO3 buffered GaAs by laser molecular beam epitaxy journal, January 2009

Preparation of a clean Ge(001) surface using oxygen plasma cleaning journal, May 2013

Ferroelectric properties of YMnO3 epitaxial films for ferroelectric-gate field-effect transistors journal, May 2003

Wetting at the BaTiO 3 /Pt interface journal, May 2013

Switching spectroscopy piezoresponse force microscopy of ferroelectric materials journal, February 2006

Quantitative complex electrical impedance microscopy by scanning evanescent microwave microscope journal, April 2002

Ab initiomolecular dynamics for liquid metals journal, January 1993

Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets journal, May 2021

High-resolution X-ray luminescence extension imaging journal, February 2021

Electronic structure of AlFeN films exhibiting crystallographic orientation change from c- to a-axis with Fe concentrations and annealing effect journal, February 2020

Epitaxial growth of Pb(Zr(0.2)Ti(0.8))O3 on Si and its nanoscale piezoelectric properties conference, January 2001

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices journal, July 2019

van der Waals epitaxy of highly (111)-oriented BaTiO 3 on MXene journal, January 2019

Integration of BaTiO 3 /CoFe 2 O 4 multiferroic heterostructure on GaN semiconductor journal, January 2019

Heteroepitaxy of perovskite (111) SrTiO 3 on wurtzite (0002) GaN using an artificial interface lattice design journal, January 2019

Polarization retention in ultra-thin barium titanate films on Ge(001) journal, April 2018

Crystalline SrZrO 3 deposition on Ge (001) by atomic layer deposition for high- k dielectric applications journal, July 2018

Effect of SrTiO 3 oxygen vacancies on the conductivity of LaTiO 3 /SrTiO 3 heterostructures journal, November 2018

Strain-dependence of χ(2) in thin film barium strontium titanate journal, February 2019

Atomic layer deposition of epitaxial ferroelectric barium titanate on Si(001) for electronic and photonic applications journal, August 2019

A review of molecular beam epitaxy of ferroelectric BaTiO 3 films on Si, Ge and GaAs substrates and their applications journal, June 2015

Local characterization of mobile charge carriers by two electrical AFM modes: multi-harmonic EFM versus sMIM journal, February 2018

Contradictory nature of Co doping in ferroelectric BaTi O 3 journal, November 2016

Epitaxial, electro‐optically active barium titanate thin films on silicon by chemical solution deposition journal, September 2019

Domain control of carrier density at a semiconductor-ferroelectric interface journal, October 2015

A review of molecular beam epitaxy of ferroelectric BaTiO 3 films on Si, Ge and GaAs substrates and their applications journal, June 2015

Epitaxy of BaTiO3 thin film on Si(001) using a SrTiO3 buffer layer for non-volatile memory application
journal, July 2011

Molecular beam epitaxy growth of epitaxial barium silicide, barium oxide, and barium titanate on silicon
journal, August 1991

Band Excitation Scanning Probe Microscopies
journal, November 2010

Academic and industry research progress in germanium nanodevices
journal, November 2011

Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode
journal, September 2013

The band excitation method in scanning probe microscopy for rapid mapping of energy dissipation on the nanoscale
journal, September 2007

Projector augmented-wave method
journal, December 1994

Crystalline Oxides on Silicon: The First Five Monolayers
journal, October 1998

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996

A Ferroelectric Oxide Made Directly on Silicon
journal, April 2009

Ferroelectric Field Effect Transistors for Memory Applications
journal, April 2010

Molecular beam epitaxial growth of BaTiO3 single crystal on Ge-on-Si(001) substrates
journal, February 2011

Special points for Brillouin-zone integrations
journal, June 1976

Theory of polarization enhancement in epitaxial BaTiO3/SrTiO3 superlattices
journal, March 2003

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996

From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999

High-frequency near-field microscopy
journal, July 2002

Ab initio molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium
journal, May 1994

Epitaxial oxide thin films on Si(001)
journal, January 2000

Batch-fabricated cantilever probes with electrical shielding for nanoscale dielectric and conductivity imaging
journal, October 2012

Epitaxial growth and strain relaxation of BaTiO[sub 3] thin films on SrTiO[sub 3] buffered (001) Si by molecular beam epitaxy
journal, January 2007

Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide
journal, July 2001

A Chemical Route to Monolithic Integration of Crystalline Oxides on Semiconductors
journal, May 2014

Atomic and electronic structure of the ferroelectric BaTiO ₃ /Ge(001) interface
journal, June 2014

Heteroepitaxial growth of BaTiO ₃ films on Si by pulsed laser deposition
journal, March 1995

Evidence of Trigonal Dangling Bonds at the Ge(111)/Oxide Interface by Electrically Detected Magnetic Resonance
journal, May 2013

Nanoscale microwave microscopy using shielded cantilever probes
journal, April 2011

c-axis oriented epitaxial BaTiO3 films on (001) Si
journal, July 2006

$n$ -Type Doping of Germanium from Phosphine: Early Stages Resolved at the Atomic Level
journal, August 2012

Hysteretic electrical transport in BaTiO ₃ /Ba ₁₋ _x Sr _x TiO ₃ /Ge heterostructures
journal, February 2014

Self-interaction correction to density-functional approximations for many-electron systems
journal, May 1981

The surface science of titanium dioxide
journal, January 2003

Properties of epitaxial BaTiO ₃ deposited on GaAs
journal, January 2013

Modeling and characterization of a cantilever-based near-field scanning microwave impedance microscope
journal, June 2008

Epitaxial growth of Pb(Zr0.2Ti0.8)O3 on Si and its nanoscale piezoelectric properties
journal, April 2001

Ge based high performance nanoscale MOSFETs
journal, June 2005

Scanning Near-Field Microwave Microscopy of VO ₂ and Chemical Vapor Deposition Graphene
journal, April 2013

Electrical properties of ferroelectric BaTiO3 thin film on SrTiO3 buffered GaAs by laser molecular beam epitaxy
journal, January 2009

Preparation of a clean Ge(001) surface using oxygen plasma cleaning
journal, May 2013

Ferroelectric properties of YMnO3 epitaxial films for ferroelectric-gate field-effect transistors
journal, May 2003

Wetting at the BaTiO ₃ /Pt interface
journal, May 2013

Switching spectroscopy piezoresponse force microscopy of ferroelectric materials
journal, February 2006

Quantitative complex electrical impedance microscopy by scanning evanescent microwave microscope
journal, April 2002

Ab initiomolecular dynamics for liquid metals
journal, January 1993

Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets
journal, May 2021

High-resolution X-ray luminescence extension imaging
journal, February 2021

Electronic structure of AlFeN films exhibiting crystallographic orientation change from c- to a-axis with Fe concentrations and annealing effect
journal, February 2020

Epitaxial growth of Pb(Zr(0.2)Ti(0.8))O3 on Si and its nanoscale piezoelectric properties
conference, January 2001

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices
journal, July 2019

van der Waals epitaxy of highly (111)-oriented BaTiO ₃ on MXene
journal, January 2019

Integration of BaTiO ₃ /CoFe ₂ O ₄ multiferroic heterostructure on GaN semiconductor
journal, January 2019

Heteroepitaxy of perovskite (111) SrTiO ₃ on wurtzite (0002) GaN using an artificial interface lattice design
journal, January 2019

Polarization retention in ultra-thin barium titanate films on Ge(001)
journal, April 2018

Crystalline SrZrO ₃ deposition on Ge (001) by atomic layer deposition for high- k dielectric applications
journal, July 2018

Effect of SrTiO ₃ oxygen vacancies on the conductivity of LaTiO ₃ /SrTiO ₃ heterostructures
journal, November 2018

Strain-dependence of χ(2) in thin film barium strontium titanate
journal, February 2019

Atomic layer deposition of epitaxial ferroelectric barium titanate on Si(001) for electronic and photonic applications
journal, August 2019

A review of molecular beam epitaxy of ferroelectric BaTiO ₃ films on Si, Ge and GaAs substrates and their applications
journal, June 2015

Local characterization of mobile charge carriers by two electrical AFM modes: multi-harmonic EFM versus sMIM
journal, February 2018

Contradictory nature of Co doping in ferroelectric $BaTi O_{3}$
journal, November 2016

Epitaxial, electro‐optically active barium titanate thin films on silicon by chemical solution deposition
journal, September 2019

Domain control of carrier density at a semiconductor-ferroelectric interface
journal, October 2015

A review of molecular beam epitaxy of ferroelectric BaTiO ₃ films on Si, Ge and GaAs substrates and their applications
journal, June 2015