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Title: Design of Semiconducting Tetrahedral Mn 1 x Zn x O Alloys and Their Application to Solar Water Splitting

Abstract

Transition metal oxides play important roles as contact and electrode materials, but their use as active layers in solar energy conversion requires achieving semiconducting properties akin to those of conventional semiconductors like Si or GaAs. In particular, efficient bipolar carrier transport is a challenge in these materials. Based on the prediction that a tetrahedral polymorph of MnO should have such desirable semiconducting properties, and the possibility to overcome thermodynamic solubility limits by nonequilibrium thin-film growth, we exploit both structure-property and composition-structure relationships to design and realize novel wurtzite-structure Mn1₋xZnxO alloys. At Zn compositions above x≈0.3, thin films of these alloys assume the tetrahedral wurtzite structure instead of the octahedral rocksalt structure of MnO, thereby enabling semiconductor properties that are unique among transition metal oxides, i.e., a band gap within the visible spectrum, a band-transport mechanism for both electron and hole carriers, electron doping, and a band lineup suitable for solar hydrogen generation. In conclusion, a proof of principle is provided by initial photo-electrocatalytic device measurements, corroborating, in particular, the predicted favorable hole-transport properties of these alloys.

Authors:
; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Laboratory (NREL), Golden, CO (United States); Energy Frontier Research Centers (EFRC) (United States). Center for Next Generation of Materials by Design: Incorporating Metastability (CNGMD)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1182803
Alternate Identifier(s):
OSTI ID: 1220582
Report Number(s):
NREL/JA-5K00-60832
Journal ID: ISSN 2160-3308; PRXHAE; 021016
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Published Article
Journal Name:
Physical Review. X
Additional Journal Information:
Journal Name: Physical Review. X Journal Volume: 5 Journal Issue: 2; Journal ID: ISSN 2160-3308
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; materials design; semiconductor oxides; ab initio computation; non-equilibrium materials

Citation Formats

Peng, Haowei, Ndione, Paul F., Ginley, David S., Zakutayev, Andriy, and Lany, Stephan. Design of Semiconducting Tetrahedral Mn 1 ₋ x Zn x O Alloys and Their Application to Solar Water Splitting. United States: N. p., 2015. Web. doi:10.1103/PhysRevX.5.021016.
Peng, Haowei, Ndione, Paul F., Ginley, David S., Zakutayev, Andriy, & Lany, Stephan. Design of Semiconducting Tetrahedral Mn 1 ₋ x Zn x O Alloys and Their Application to Solar Water Splitting. United States. https://doi.org/10.1103/PhysRevX.5.021016
Peng, Haowei, Ndione, Paul F., Ginley, David S., Zakutayev, Andriy, and Lany, Stephan. Mon . "Design of Semiconducting Tetrahedral Mn 1 ₋ x Zn x O Alloys and Their Application to Solar Water Splitting". United States. https://doi.org/10.1103/PhysRevX.5.021016.
@article{osti_1182803,
title = {Design of Semiconducting Tetrahedral Mn 1 ₋ x Zn x O Alloys and Their Application to Solar Water Splitting},
author = {Peng, Haowei and Ndione, Paul F. and Ginley, David S. and Zakutayev, Andriy and Lany, Stephan},
abstractNote = {Transition metal oxides play important roles as contact and electrode materials, but their use as active layers in solar energy conversion requires achieving semiconducting properties akin to those of conventional semiconductors like Si or GaAs. In particular, efficient bipolar carrier transport is a challenge in these materials. Based on the prediction that a tetrahedral polymorph of MnO should have such desirable semiconducting properties, and the possibility to overcome thermodynamic solubility limits by nonequilibrium thin-film growth, we exploit both structure-property and composition-structure relationships to design and realize novel wurtzite-structure Mn1₋xZnxO alloys. At Zn compositions above x≈0.3, thin films of these alloys assume the tetrahedral wurtzite structure instead of the octahedral rocksalt structure of MnO, thereby enabling semiconductor properties that are unique among transition metal oxides, i.e., a band gap within the visible spectrum, a band-transport mechanism for both electron and hole carriers, electron doping, and a band lineup suitable for solar hydrogen generation. In conclusion, a proof of principle is provided by initial photo-electrocatalytic device measurements, corroborating, in particular, the predicted favorable hole-transport properties of these alloys.},
doi = {10.1103/PhysRevX.5.021016},
journal = {Physical Review. X},
number = 2,
volume = 5,
place = {United States},
year = {Mon May 18 00:00:00 EDT 2015},
month = {Mon May 18 00:00:00 EDT 2015}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/PhysRevX.5.021016

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Works referenced in this record:

Dielectric properties and excitons for extended systems from hybrid functionals
journal, September 2008


Electrons in lattice fields
journal, July 1954


Achieving high free electron mobility in ZnO:Al thin films grown by reactive pulsed magnetron sputtering
journal, January 2009

  • Cornelius, S.; Vinnichenko, M.; Shevchenko, N.
  • Applied Physics Letters, Vol. 94, Issue 4
  • DOI: 10.1063/1.3074373

Generalized Gradient Approximation Made Simple
journal, October 1996

  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
  • Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
  • DOI: 10.1103/PhysRevLett.77.3865

Photoelectrochemical cells
journal, November 2001


Non-equilibrium origin of high electrical conductivity in gallium zinc oxide thin films
journal, December 2013

  • Zakutayev, Andriy; Perry, Nicola H.; Mason, Thomas O.
  • Applied Physics Letters, Vol. 103, Issue 23
  • DOI: 10.1063/1.4841355

An ab initio model of electron transport in hematite (α-Fe2O3) basal planes
journal, April 2003

  • Rosso, Kevin M.; Smith, Dayle M. A.; Dupuis, Michel
  • The Journal of Chemical Physics, Vol. 118, Issue 14, p. 6455-6466
  • DOI: 10.1063/1.1558534

Holes bound as small polarons to acceptor defects in oxide materials: why are their thermal ionization energies so high?
journal, August 2011


Cation off-stoichiometry leads to high p -type conductivity and enhanced transparency in Co 2 ZnO 4 and Co 2 NiO 4 thin films
journal, February 2012


Polymorphic energy ordering of MgO, ZnO, GaN, and MnO within the random phase approximation
journal, May 2013


Electronic properties of random alloys: Special quasirandom structures
journal, November 1990


Grand challenges in basic energy sciences
journal, July 2008

  • Fleming, Graham R.; Ratner, Mark A.
  • Physics Today, Vol. 61, Issue 7
  • DOI: 10.1063/1.2963009

Recent advances in ZnO materials and devices
journal, March 2001


Angle-resolved photoemission and quasiparticle calculation of ZnO: The need for d band shift in oxide semiconductors
journal, December 2012


New Crystal Structure: Synthesis and Characterization of Hexagonal Wurtzite MnO
journal, May 2012

  • Nam, Ki Min; Kim, Yong-Il; Jo, Younghun
  • Journal of the American Chemical Society, Vol. 134, Issue 20
  • DOI: 10.1021/ja302440y

Using design principles to systematically plan the synthesis of hole-conducting transparent oxides: Cu 3 VO 4 and Ag 3 VO 4 as a case study
journal, October 2011


From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999


Electronic Correlation in Anion p Orbitals Impedes Ferromagnetism due to Cation Vacancies in Zn Chalcogenides
journal, July 2009


Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study
journal, January 1998

  • Dudarev, S. L.; Botton, G. A.; Savrasov, S. Y.
  • Physical Review B, Vol. 57, Issue 3, p. 1505-1509
  • DOI: 10.1103/PhysRevB.57.1505

The electrical properties of polycrystalline silicon films
journal, December 1975

  • Seto, John Y. W.
  • Journal of Applied Physics, Vol. 46, Issue 12
  • DOI: 10.1063/1.321593

Experimental Characterization of a Theoretically Designed Candidate p-Type Transparent Conducting Oxide: Li-Doped Cr 2 MnO 4
journal, July 2014

  • Nagaraja, Arpun R.; Stone, Kevin H.; Toney, Michael F.
  • Chemistry of Materials, Vol. 26, Issue 15
  • DOI: 10.1021/cm501974t

Physical Chemistry of Semiconductor−Liquid Interfaces
journal, January 1996

  • Nozik, Arthur J.; Memming, Rüdiger
  • The Journal of Physical Chemistry, Vol. 100, Issue 31
  • DOI: 10.1021/jp953720e

Self-Compensation Limited Conductivity in Binary Semiconductors. I. Theory
journal, May 1964


Polaronic hole localization and multiple hole binding of acceptors in oxide wide-gap semiconductors
journal, August 2009


Studies of polaron motion
journal, November 1959


Semiconducting transition-metal oxides based on d 5 cations: Theory for MnO and Fe 2 O 3
journal, May 2012


Density-functional study of the structure and stability of ZnO surfaces
journal, January 2003


Li-Doped Cr 2 MnO 4 : A New p-Type Transparent Conducting Oxide by Computational Materials Design
journal, May 2013

  • Peng, Haowei; Zakutayev, Andriy; Lany, Stephan
  • Advanced Functional Materials, Vol. 23, Issue 42
  • DOI: 10.1002/adfm.201300807

Zinc oxide-based diluted magnetic semiconductors
journal, February 2005


On the Absorption Spectra of Complex Ions II
journal, September 1954

  • Tanabe, Yukito; Sugano, Satoru
  • Journal of the Physical Society of Japan, Vol. 9, Issue 5
  • DOI: 10.1143/JPSJ.9.766

Dynamics of photogenerated holes in nanocrystalline α-Fe 2 O 3 electrodes for water oxidation probed by transient absorption spectroscopy
journal, January 2011

  • Pendlebury, Stephanie R.; Barroso, Monica; Cowan, Alexander J.
  • Chem. Commun., Vol. 47, Issue 2
  • DOI: 10.1039/C0CC03627G

Solar Water Splitting: Progress Using Hematite (α-Fe2O3) Photoelectrodes
journal, March 2011

  • Sivula, Kevin; Le Formal, Florian; Grätzel, Michael
  • ChemSusChem, Vol. 4, Issue 4
  • DOI: 10.1002/cssc.201000416

Ab initio study of electron and hole transport in pure and doped MnO and MnO:ZnO alloy
journal, January 2013

  • Kanan, Dalal K.; Carter, Emily A.
  • Journal of Materials Chemistry A, Vol. 1, Issue 32
  • DOI: 10.1039/c3ta11265a

Localization and Delocalization Errors in Density Functional Theory and Implications for Band-Gap Prediction
journal, April 2008


Metallic conductivity and metal-semiconductor transition in Ga-doped ZnO
journal, January 2006

  • Bhosle, V.; Tiwari, A.; Narayan, J.
  • Applied Physics Letters, Vol. 88, Issue 3
  • DOI: 10.1063/1.2165281

STM study of the geometric and electronic structure of ZnO()-Zn, ()-O, (), and () surfaces
journal, November 2002


Local Antiferromagnetic Order in Single-Crystal MnO above the Néel Temperature
journal, July 1966


Non-equilibrium deposition of phase pure Cu 2 O thin films at reduced growth temperature
journal, February 2014

  • Subramaniyan, Archana; Perkins, John D.; O’Hayre, Ryan P.
  • APL Materials, Vol. 2, Issue 2
  • DOI: 10.1063/1.4865457

Linear optical properties in the projector-augmented wave methodology
journal, January 2006


Predicting polaronic defect states by means of generalized Koopmans density functional calculations
journal, September 2010


Optical and structural properties of epitaxial MgxZn1−xO alloys
journal, November 1999

  • Sharma, A. K.; Narayan, J.; Muth, J. F.
  • Applied Physics Letters, Vol. 75, Issue 21
  • DOI: 10.1063/1.125340

Band Gap Engineering of MnO via ZnO Alloying: A Potential New Visible-Light Photocatalyst
journal, April 2012

  • Kanan, Dalal K.; Carter, Emily A.
  • The Journal of Physical Chemistry C, Vol. 116, Issue 18, p. 9876-9887
  • DOI: 10.1021/jp300590d

Zn–Ni–Co–O wide-band-gap p-type conductive oxides with high work functions
journal, August 2011

  • Zakutayev, A.; Perkins, J. D.; Parilla, P. A.
  • MRS Communications, Vol. 1, Issue 1
  • DOI: 10.1557/mrc.2011.9

Enhanced Electron Mobility Due to Dopant-Defect Pairing in Conductive ZnMgO
journal, January 2014

  • Ke, Yi; Lany, Stephan; Berry, Joseph J.
  • Advanced Functional Materials, Vol. 24, Issue 19
  • DOI: 10.1002/adfm.201303204

Small-polaron versus band conduction in some transition-metal oxides
journal, January 1970


Assessing capability of semiconductors to split water using ionization potentials and electron affinities only
journal, January 2014

  • Stevanović, Vladan; Lany, Stephan; Ginley, David S.
  • Physical Chemistry Chemical Physics, Vol. 16, Issue 8
  • DOI: 10.1039/c3cp54589j

Berry-phase treatment of the homogeneous electric field perturbation in insulators
journal, March 2001


The effect of lattice vibrations on substitutional alloy thermodynamics
journal, January 2002


Development and application of an instrument for spatially resolved Seebeck coefficient measurements
journal, May 2013

  • Zakutayev, Andriy; Luciano, Frank J.; Bollinger, Vincent P.
  • Review of Scientific Instruments, Vol. 84, Issue 5
  • DOI: 10.1063/1.4804634

The solubility of transition metal oxides in zinc oxide and the reflectance spectra of Mn2+ and Fe2+ in tetrahedral fields
journal, February 1966


How Does Chemistry Influence Electron Effective Mass in Oxides? A High-Throughput Computational Analysis
journal, September 2014

  • Hautier, Geoffroy; Miglio, Anna; Waroquiers, David
  • Chemistry of Materials, Vol. 26, Issue 19
  • DOI: 10.1021/cm404079a

Quasiparticle band structures of the antiferromagnetic transition-metal oxides MnO, FeO, CoO, and NiO
journal, June 2009


VMD: Visual molecular dynamics
journal, February 1996


Implementation and performance of the frequency-dependent G W method within the PAW framework
journal, July 2006


Highly Improved Quantum Efficiencies for Thin Film BiVO 4 Photoanodes
journal, August 2011

  • Liang, Yongqi; Tsubota, Toshiki; Mooij, Lennard P. A.
  • The Journal of Physical Chemistry C, Vol. 115, Issue 35
  • DOI: 10.1021/jp203004v