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Title: Evidence for a shallow Cu acceptor in Si from infrared spectroscopy and photoconductivity

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1180123
Grant/Contract Number:  
FG02–07ER46386; AC02–05CH11231
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 90 Journal Issue: 16; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Teklemichael, S. T., McCluskey, M. D., Buchowicz, G., Dubon, O. D., and Haller, E. E. Evidence for a shallow Cu acceptor in Si from infrared spectroscopy and photoconductivity. United States: N. p., 2014. Web. doi:10.1103/PhysRevB.90.165204.
Teklemichael, S. T., McCluskey, M. D., Buchowicz, G., Dubon, O. D., & Haller, E. E. Evidence for a shallow Cu acceptor in Si from infrared spectroscopy and photoconductivity. United States. doi:10.1103/PhysRevB.90.165204.
Teklemichael, S. T., McCluskey, M. D., Buchowicz, G., Dubon, O. D., and Haller, E. E. Fri . "Evidence for a shallow Cu acceptor in Si from infrared spectroscopy and photoconductivity". United States. doi:10.1103/PhysRevB.90.165204.
@article{osti_1180123,
title = {Evidence for a shallow Cu acceptor in Si from infrared spectroscopy and photoconductivity},
author = {Teklemichael, S. T. and McCluskey, M. D. and Buchowicz, G. and Dubon, O. D. and Haller, E. E.},
abstractNote = {},
doi = {10.1103/PhysRevB.90.165204},
journal = {Physical Review B},
number = 16,
volume = 90,
place = {United States},
year = {2014},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.90.165204

Citation Metrics:
Cited by: 1 work
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Works referenced in this record:

Impurities in silicon solar cells
journal, April 1980

  • Davis, J.R.; Rohatgi, A.; Hopkins, R.H.
  • IEEE Transactions on Electron Devices, Vol. 27, Issue 4, p. 677-687
  • DOI: 10.1109/T-ED.1980.19922