Infrared photoconductivity via deep copper acceptors in silicon-doped, copper-compensated gallium arsenide photoconductive switches
- Naval Surface Warfare Center, Dahlgren, VA (United States)
Silicon-doped, copper-compensated, semi-insulated gallium arsenide of various doping parameters has been studied with respect to infrared photoconductivity. This material is used as a photoconductive switch known as the Bistable Optically controlled Semiconductor Switch (BOSS). This device is a candidate for use in high-power, frequency agile pulse power applications. One limitation has been the relatively low conductivity of the device during the 'on-state'. Typically, silicon-doped gallium arsenide is converted to semi-insulating gallium arsenide by the thermal diffusion of copper into the GaAs:Si. The authors have shown that variation of the diffusion parameters can improve the on-state conductivity by the enhancement of the concentration of a copper center known as Cu[sub B]. The conductivity of the device 150 ns after irradiation from a 20-ns FWHM laser pulse ([lambda] = 1.1 [mu]m) is recorded for various incident energies. This on-state conductivity saturates at a value that is predicted by the densities of the copper levels and the mobility. Also, the samples were irradiated with a 140-ps FWHM laser pulse ([mu] = 2 [mu]m) in order to excite holes from the copper levels into the valence band which demonstrates the nature of the hole recapture into the various copper acceptors.
- OSTI ID:
- 6338892
- Journal Information:
- IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States), Vol. 40:6; ISSN 0018-9383
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GALLIUM ARSENIDES
PHOTOCONDUCTIVITY
SEMICONDUCTOR SWITCHES
DESIGN
COPPER
DIFFUSION
DOPED MATERIALS
ELECTRICAL INSULATION
HOLES
INFRARED RADIATION
LASER RADIATION
PULSE GENERATORS
SEMICONDUCTOR DEVICES
SILICON
ARSENIC COMPOUNDS
ARSENIDES
ELECTRIC CONDUCTIVITY
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELECTRONIC EQUIPMENT
ELEMENTS
EQUIPMENT
FUNCTION GENERATORS
GALLIUM COMPOUNDS
MATERIALS
METALS
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
SEMIMETALS
SWITCHES
TRANSITION ELEMENTS
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)