Detection and characterization of multi-filament evolution during resistive switching
Abstract
We present resistive switching data in TaOx memristors displaying signatures of multi-filament switching modes, and develop a geometrically defined equivalent circuit to separate the individual resistances and powers dissipated in each filament. Using these resolved values, we compare the individual switching curves of each filament and demonstrate that the switching data of each filament collapse onto a single switching curve determined by the analytical steady-state resistive switching solution for filamentary switching. Analyzing our results in terms of this solution, we determine the switching temperature, heat flow, conductivity, and time evolving areas of each filament during resistive switching. Finally, we discuss operational modes which may limit the formation of additional conducting filaments, potentially leading to increased device endurance.
- Authors:
-
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1145719
- Report Number(s):
- SAND2014-4055J
Journal ID: ISSN 0003-6951; APPLAB; 518013
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 105; Journal Issue: 5; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY
Citation Formats
Mickel, Patrick R., Lohn, Andrew J., and Marinella, Matthew J. Detection and characterization of multi-filament evolution during resistive switching. United States: N. p., 2014.
Web. doi:10.1063/1.4892471.
Mickel, Patrick R., Lohn, Andrew J., & Marinella, Matthew J. Detection and characterization of multi-filament evolution during resistive switching. United States. https://doi.org/10.1063/1.4892471
Mickel, Patrick R., Lohn, Andrew J., and Marinella, Matthew J. Tue .
"Detection and characterization of multi-filament evolution during resistive switching". United States. https://doi.org/10.1063/1.4892471. https://www.osti.gov/servlets/purl/1145719.
@article{osti_1145719,
title = {Detection and characterization of multi-filament evolution during resistive switching},
author = {Mickel, Patrick R. and Lohn, Andrew J. and Marinella, Matthew J.},
abstractNote = {We present resistive switching data in TaOx memristors displaying signatures of multi-filament switching modes, and develop a geometrically defined equivalent circuit to separate the individual resistances and powers dissipated in each filament. Using these resolved values, we compare the individual switching curves of each filament and demonstrate that the switching data of each filament collapse onto a single switching curve determined by the analytical steady-state resistive switching solution for filamentary switching. Analyzing our results in terms of this solution, we determine the switching temperature, heat flow, conductivity, and time evolving areas of each filament during resistive switching. Finally, we discuss operational modes which may limit the formation of additional conducting filaments, potentially leading to increased device endurance.},
doi = {10.1063/1.4892471},
journal = {Applied Physics Letters},
number = 5,
volume = 105,
place = {United States},
year = {Tue Aug 05 00:00:00 EDT 2014},
month = {Tue Aug 05 00:00:00 EDT 2014}
}
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Works referencing / citing this record:
Electroforming-Free TaOx Memristors using Focused Ion Beam Irradiations
text, January 2017
- Pacheco, J. L.; Perry, D. L.; Hughart, D. R.
- arXiv