Structural defects in GaN revealed by Transmission Electron Microscopy
Abstract
This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Lastly, some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.
- Authors:
-
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1131027
- Report Number(s):
- LBNL-6624E
Journal ID: ISSN 0021-4922
- Grant/Contract Number:
- AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Japanese Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 53; Journal Issue: 10; Journal ID: ISSN 0021-4922
- Publisher:
- Japan Society of Applied Physics
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Liliental-Weber, Zuzanna. Structural defects in GaN revealed by Transmission Electron Microscopy. United States: N. p., 2014.
Web. doi:10.7567/JJAP.53.100205.
Liliental-Weber, Zuzanna. Structural defects in GaN revealed by Transmission Electron Microscopy. United States. https://doi.org/10.7567/JJAP.53.100205
Liliental-Weber, Zuzanna. Mon .
"Structural defects in GaN revealed by Transmission Electron Microscopy". United States. https://doi.org/10.7567/JJAP.53.100205. https://www.osti.gov/servlets/purl/1131027.
@article{osti_1131027,
title = {Structural defects in GaN revealed by Transmission Electron Microscopy},
author = {Liliental-Weber, Zuzanna},
abstractNote = {This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Lastly, some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.},
doi = {10.7567/JJAP.53.100205},
journal = {Japanese Journal of Applied Physics},
number = 10,
volume = 53,
place = {United States},
year = {Mon Sep 08 00:00:00 EDT 2014},
month = {Mon Sep 08 00:00:00 EDT 2014}
}
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