Optically detected magnetic resonance of (effective-mass) shallow acceptors in Si-doped GaN homoepitaxial layers.
- Samsung-SAIT, Suwon, South Korea
- Naval Research Laboratory, Washington, DC
Optically detected magnetic resonance (ODMR) has been performed on Si-doped GaN homoepitaxial layers grown by organometallic chemical vapor deposition on free-standing GaN templates. In addition to intense excitonic bandedge emission with narrow linewidths (<0.4 meV), these films exhibit strong shallow donor-shallow acceptor recombination at 3.27 eV. Most notably, ODMR on this photoluminescence band reveals a highly anisotropic resonance with g{sub {parallel}} = 2.193 {+-} 0.001 and g{sub {perpendicular}} {approx}0 as expected for effective-mass shallow acceptors in wurtzitic GaN from k {center_dot} p theory. This previously elusive result is attributed to the much reduced dislocation density and impurity levels compared to those typically found in the widely investigated Mg-doped GaN heteroepitaxial layers. The possible chemical origin of the shallow acceptors in these homoepitaxial films will be discussed.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 964548
- Report Number(s):
- SAND2004-3141J; TRN: US200921%%133
- Journal Information:
- Proposed for publication in Physical Review B., Journal Name: Proposed for publication in Physical Review B.
- Country of Publication:
- United States
- Language:
- English
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