Giant Ambipolar Rashba Effect in the Semiconductor BiTeI

Crepaldi, A.; Moreschini, L.; Autès, G.; Tournier-Colletta, C.; Moser, S.; Virk, N.; Berger, H.; Bugnon, Ph.; Chang, Y. J.; Kern, K.; Bostwick, A.; Rotenberg, E.; Yazyev, O. V.; Grioni, M.

doi:10.1103/PhysRevLett.109.096803

Title: Giant Ambipolar Rashba Effect in the Semiconductor BiTeI

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Authors:: Crepaldi, A.; Moreschini, L.; Autès, G.; Tournier-Colletta, C.; Moser, S.; Virk, N.; Berger, H.; Bugnon, Ph.; Chang, Y. J.; Kern, K.; Bostwick, A.; Rotenberg, E.; Yazyev, O. V.; Grioni, M.

Publication Date:: Thu Aug 30 00:00:00 EDT 2012

Sponsoring Org.:: USDOE

OSTI Identifier:: 1103215

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review Letters

Additional Journal Information:: Journal Volume: 109; Journal Issue: 9; Journal ID: ISSN 0031-9007

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Crepaldi, A., Moreschini, L., Autès, G., Tournier-Colletta, C., Moser, S., Virk, N., Berger, H., Bugnon, Ph., Chang, Y. J., Kern, K., Bostwick, A., Rotenberg, E., Yazyev, O. V., and Grioni, M. Giant Ambipolar Rashba Effect in the Semiconductor BiTeI.  United States: N. p., 2012. 
Web.  doi:10.1103/PhysRevLett.109.096803.

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                    Crepaldi, A., Moreschini, L., Autès, G., Tournier-Colletta, C., Moser, S., Virk, N., Berger, H., Bugnon, Ph., Chang, Y. J., Kern, K., Bostwick, A., Rotenberg, E., Yazyev, O. V., & Grioni, M. Giant Ambipolar Rashba Effect in the Semiconductor BiTeI.  United States.  https://doi.org/10.1103/PhysRevLett.109.096803

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                    Crepaldi, A., Moreschini, L., Autès, G., Tournier-Colletta, C., Moser, S., Virk, N., Berger, H., Bugnon, Ph., Chang, Y. J., Kern, K., Bostwick, A., Rotenberg, E., Yazyev, O. V., and Grioni, M. Thu .  
"Giant Ambipolar Rashba Effect in the Semiconductor BiTeI".  United States.  https://doi.org/10.1103/PhysRevLett.109.096803.

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@article{osti_1103215,

  title        = {Giant Ambipolar Rashba Effect in the Semiconductor BiTeI},

  author       = {Crepaldi, A. and Moreschini, L. and Autès, G. and Tournier-Colletta, C. and Moser, S. and Virk, N. and Berger, H. and Bugnon, Ph. and Chang, Y. J. and Kern, K. and Bostwick, A. and Rotenberg, E. and Yazyev, O. V. and Grioni, M.},

  abstractNote = {},

  doi          = {10.1103/PhysRevLett.109.096803},

  journal      = {Physical Review Letters},

  number       = 9,

  volume       = 109,

  place        = {United States},

  year         = {Thu Aug 30 00:00:00 EDT 2012},

  month        = {Thu Aug 30 00:00:00 EDT 2012}

}

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