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Title: Enhanced thermoelectric performance in the Rashba semiconductor BiTeI through band gap engineering

Authors:
; ; ; ; ; ; ;
Publication Date:
Grant/Contract Number:
FC26-04NT42278
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Physics. Condensed Matter
Additional Journal Information:
Journal Name: Journal of Physics. Condensed Matter Journal Volume: 28 Journal Issue: 8; Journal ID: ISSN 0953-8984
Publisher:
IOP Publishing
Sponsoring Org:
USDOE
Country of Publication:
United Kingdom
Language:
English
OSTI Identifier:
1236521

Wu, Lihua, Yang, Jiong, Zhang, Tiansong, Wang, Shanyu, Wei, Ping, Zhang, Wenqing, Chen, Lidong, and Yang, Jihui. Enhanced thermoelectric performance in the Rashba semiconductor BiTeI through band gap engineering. United Kingdom: N. p., Web. doi:10.1088/0953-8984/28/8/085801.
Wu, Lihua, Yang, Jiong, Zhang, Tiansong, Wang, Shanyu, Wei, Ping, Zhang, Wenqing, Chen, Lidong, & Yang, Jihui. Enhanced thermoelectric performance in the Rashba semiconductor BiTeI through band gap engineering. United Kingdom. doi:10.1088/0953-8984/28/8/085801.
Wu, Lihua, Yang, Jiong, Zhang, Tiansong, Wang, Shanyu, Wei, Ping, Zhang, Wenqing, Chen, Lidong, and Yang, Jihui. 2016. "Enhanced thermoelectric performance in the Rashba semiconductor BiTeI through band gap engineering". United Kingdom. doi:10.1088/0953-8984/28/8/085801.
@article{osti_1236521,
title = {Enhanced thermoelectric performance in the Rashba semiconductor BiTeI through band gap engineering},
author = {Wu, Lihua and Yang, Jiong and Zhang, Tiansong and Wang, Shanyu and Wei, Ping and Zhang, Wenqing and Chen, Lidong and Yang, Jihui},
abstractNote = {},
doi = {10.1088/0953-8984/28/8/085801},
journal = {Journal of Physics. Condensed Matter},
number = 8,
volume = 28,
place = {United Kingdom},
year = {2016},
month = {2}
}