Abstract
Thin films of TiO/sub 2/ were produced at 130-250/sup 0/C by chemical vapour deposition (CVD) involving the hydrolysis of TiCl/sub 4/. An apparatus was developed which gives good control and reproducibility. The reaction takes place on a heated disc that rotates the silicon substrate. Premature reaction between the gases, TiCl/sub 4/ and water vapour is prevented by appropriate temperature control and careful design of the gas delivery system. With this apparatus the thickness of the TiO/sub 2/ films is controlled to within +-5% of the target value. Attention is also directed to reducing the pinhole density of the resulting films. The refractive index of the TiO/sub 2/ films was found to increase with increasing deposition temperature, from 2.1 at around 130/sup 0/C to 2.4 at 250/sup 0/C. From capacitance-voltage measurements the surface charge at the TiO/sub 2/-Si interface of films deposited at 200/sup 0/C was found to be negative. Hence these TiO/sub 2/ films are good antireflection coatings for n-type metal/insulator/semiconductor inversion layer solar cells.
Citation Formats
Yeung, K S, and Lam, Y W.
Simple chemical vapour deposition method for depositing thin TiO/sub 2/ films.
Switzerland: N. p.,
1983.
Web.
doi:10.1016/0040-6090(83)90136-0.
Yeung, K S, & Lam, Y W.
Simple chemical vapour deposition method for depositing thin TiO/sub 2/ films.
Switzerland.
https://doi.org/10.1016/0040-6090(83)90136-0
Yeung, K S, and Lam, Y W.
1983.
"Simple chemical vapour deposition method for depositing thin TiO/sub 2/ films."
Switzerland.
https://doi.org/10.1016/0040-6090(83)90136-0.
@misc{etde_6907089,
title = {Simple chemical vapour deposition method for depositing thin TiO/sub 2/ films}
author = {Yeung, K S, and Lam, Y W}
abstractNote = {Thin films of TiO/sub 2/ were produced at 130-250/sup 0/C by chemical vapour deposition (CVD) involving the hydrolysis of TiCl/sub 4/. An apparatus was developed which gives good control and reproducibility. The reaction takes place on a heated disc that rotates the silicon substrate. Premature reaction between the gases, TiCl/sub 4/ and water vapour is prevented by appropriate temperature control and careful design of the gas delivery system. With this apparatus the thickness of the TiO/sub 2/ films is controlled to within +-5% of the target value. Attention is also directed to reducing the pinhole density of the resulting films. The refractive index of the TiO/sub 2/ films was found to increase with increasing deposition temperature, from 2.1 at around 130/sup 0/C to 2.4 at 250/sup 0/C. From capacitance-voltage measurements the surface charge at the TiO/sub 2/-Si interface of films deposited at 200/sup 0/C was found to be negative. Hence these TiO/sub 2/ films are good antireflection coatings for n-type metal/insulator/semiconductor inversion layer solar cells.}
doi = {10.1016/0040-6090(83)90136-0}
journal = []
volume = {109:2}
journal type = {AC}
place = {Switzerland}
year = {1983}
month = {Nov}
}
title = {Simple chemical vapour deposition method for depositing thin TiO/sub 2/ films}
author = {Yeung, K S, and Lam, Y W}
abstractNote = {Thin films of TiO/sub 2/ were produced at 130-250/sup 0/C by chemical vapour deposition (CVD) involving the hydrolysis of TiCl/sub 4/. An apparatus was developed which gives good control and reproducibility. The reaction takes place on a heated disc that rotates the silicon substrate. Premature reaction between the gases, TiCl/sub 4/ and water vapour is prevented by appropriate temperature control and careful design of the gas delivery system. With this apparatus the thickness of the TiO/sub 2/ films is controlled to within +-5% of the target value. Attention is also directed to reducing the pinhole density of the resulting films. The refractive index of the TiO/sub 2/ films was found to increase with increasing deposition temperature, from 2.1 at around 130/sup 0/C to 2.4 at 250/sup 0/C. From capacitance-voltage measurements the surface charge at the TiO/sub 2/-Si interface of films deposited at 200/sup 0/C was found to be negative. Hence these TiO/sub 2/ films are good antireflection coatings for n-type metal/insulator/semiconductor inversion layer solar cells.}
doi = {10.1016/0040-6090(83)90136-0}
journal = []
volume = {109:2}
journal type = {AC}
place = {Switzerland}
year = {1983}
month = {Nov}
}