Abstract
In the former technology, reduction and denaturing of the background, transparent electrode at the time of a-Si deposition are not completely prevented, which gave problems in enhancing high efficiency of the solar cell performances. This invention aims to provide a solar cell with high conversion efficiency, which requires no transparent electrode of an oxide; by reducing the resistance of the a-Si material, using this a-Si (which is a part of the main body of photoelectric conversion) as a light incidenting electrode. For this purpose, instead of using p- or n- layer of the light incidenting side in the pin structure (formerly a main photoelectric conversion boly), less resistant p {sub +} or n {sup +} layer film is formed; said film is used as an electrode on the light incidenting side, thus enabling to form a low resistant film either or n- or p- layer on the back side by forming a structure of p {sup +} in {sup +} or n {sup +} ip {sup +}. By using a fine silicon crystal or a fine Si-alloy crystal for p {sup +} or n {sup +} layer and their specific resistance being arranged to be 1.5 ohm-cm or less, thus
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Citation Formats
Matsubara, T, Ito, H, Muramatsu, S, and Shimada, H.
Amorphous silicon solar cell. Amorphous silicon taiyo denchi.
Japan: N. p.,
1990.
Web.
Matsubara, T, Ito, H, Muramatsu, S, & Shimada, H.
Amorphous silicon solar cell. Amorphous silicon taiyo denchi.
Japan.
Matsubara, T, Ito, H, Muramatsu, S, and Shimada, H.
1990.
"Amorphous silicon solar cell. Amorphous silicon taiyo denchi."
Japan.
@misc{etde_6196317,
title = {Amorphous silicon solar cell. Amorphous silicon taiyo denchi}
author = {Matsubara, T, Ito, H, Muramatsu, S, and Shimada, H}
abstractNote = {In the former technology, reduction and denaturing of the background, transparent electrode at the time of a-Si deposition are not completely prevented, which gave problems in enhancing high efficiency of the solar cell performances. This invention aims to provide a solar cell with high conversion efficiency, which requires no transparent electrode of an oxide; by reducing the resistance of the a-Si material, using this a-Si (which is a part of the main body of photoelectric conversion) as a light incidenting electrode. For this purpose, instead of using p- or n- layer of the light incidenting side in the pin structure (formerly a main photoelectric conversion boly), less resistant p {sub +} or n {sup +} layer film is formed; said film is used as an electrode on the light incidenting side, thus enabling to form a low resistant film either or n- or p- layer on the back side by forming a structure of p {sup +} in {sup +} or n {sup +} ip {sup +}. By using a fine silicon crystal or a fine Si-alloy crystal for p {sup +} or n {sup +} layer and their specific resistance being arranged to be 1.5 ohm-cm or less, thus setting up an a-Si solar cell. 8 figs.}
place = {Japan}
year = {1990}
month = {Jun}
}
title = {Amorphous silicon solar cell. Amorphous silicon taiyo denchi}
author = {Matsubara, T, Ito, H, Muramatsu, S, and Shimada, H}
abstractNote = {In the former technology, reduction and denaturing of the background, transparent electrode at the time of a-Si deposition are not completely prevented, which gave problems in enhancing high efficiency of the solar cell performances. This invention aims to provide a solar cell with high conversion efficiency, which requires no transparent electrode of an oxide; by reducing the resistance of the a-Si material, using this a-Si (which is a part of the main body of photoelectric conversion) as a light incidenting electrode. For this purpose, instead of using p- or n- layer of the light incidenting side in the pin structure (formerly a main photoelectric conversion boly), less resistant p {sub +} or n {sup +} layer film is formed; said film is used as an electrode on the light incidenting side, thus enabling to form a low resistant film either or n- or p- layer on the back side by forming a structure of p {sup +} in {sup +} or n {sup +} ip {sup +}. By using a fine silicon crystal or a fine Si-alloy crystal for p {sup +} or n {sup +} layer and their specific resistance being arranged to be 1.5 ohm-cm or less, thus setting up an a-Si solar cell. 8 figs.}
place = {Japan}
year = {1990}
month = {Jun}
}