{
  "date" : "1990-06-25",
  "identifier_doecontract" : "",
  "subject" : "30 DIRECT ENERGY CONVERSION; ELECTRODES; MECHANICAL STRUCTURES; POLYCRYSTALS; SOLAR CELLS; ELECTRIC POTENTIAL; PHOTOVOLTAIC CONVERSION; AMORPHOUS STATE; CONTROL; EFFICIENCY; LAYERS; SATURATION; SILICON; CONVERSION; CRYSTALS; DIRECT ENERGY CONVERSION; DIRECT ENERGY CONVERTERS; ELEMENTS; ENERGY CONVERSION; EQUIPMENT; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMIMETALS; SOLAR EQUIPMENT; 300503* - Fuel Cells- Materials, Components, & Auxiliaries",
  "description" : "In the former technology, reduction and denaturing of the background, transparent electrode at the time of a-Si deposition are not completely prevented, which gave problems in enhancing high efficiency of the solar cell performances. This invention aims to provide a solar cell with high conversion efficiency, which requires no transparent electrode of an oxide; by reducing the resistance of the a-Si material, using this a-Si (which is a part of the main body of photoelectric conversion) as a light incidenting electrode. For this purpose, instead of using p- or n- layer of the light incidenting side in the pin structure (formerly a main photoelectric conversion boly), less resistant p {sub +} or n {sup +} layer film is formed; said film is used as an electrode on the light incidenting side, thus enabling to form a low resistant film either or n- or p- layer on the back side by forming a structure of p {sup +} in {sup +} or n {sup +} ip {sup +}. By using a fine silicon crystal or a fine Si-alloy crystal for p {sup +} or n {sup +} layer and their specific resistance being arranged to be 1.5 ohm-cm or less, thus setting up an a-Si solar cell. 8 figs.",
  "language" : "Japanese",
  "identifier_report" : "JP 2-164079",
  "publisher_sponsor" : "",
  "publisher_country" : "Japan",
  "source" : "NEDO; NEDO-90-960428; EDB-91-010422",
  "purl" : "",
  "title" : "Amorphous silicon solar cell. Amorphous silicon taiyo denchi",
  "type" : "Patent",
  "subject_related" : "",
  "relation" : "Patent File Date: 19 Dec 1988",
  "entry_date" : "2008-02-07",
  "subject_list" : [ "30 DIRECT ENERGY CONVERSION", "ELECTRODES", "MECHANICAL STRUCTURES", "POLYCRYSTALS", "SOLAR CELLS", "ELECTRIC POTENTIAL", "PHOTOVOLTAIC CONVERSION", "AMORPHOUS STATE", "CONTROL", "EFFICIENCY", "LAYERS", "SATURATION", "SILICON", "CONVERSION", "CRYSTALS", "DIRECT ENERGY CONVERSION", "DIRECT ENERGY CONVERTERS", "ELEMENTS", "ENERGY CONVERSION", "EQUIPMENT", "PHOTOELECTRIC CELLS", "PHOTOVOLTAIC CELLS", "SEMIMETALS", "SOLAR EQUIPMENT", "300503* - Fuel Cells- Materials, Components, & Auxiliaries" ],
  "publisher_availability" : "Available from Japan Patent Information Organization or International Patent Documentation Center",
  "rights" : "Patent Assignee: Hitachi Ltd.",
  "announced_date" : "2001-05-13",
  "type_qualifier" : "Special Availability",
  "has_fulltext" : false,
  "coverage" : "",
  "identifier" : "",
  "journal_volume" : "",
  "creator" : "Matsubara, T; Ito, H; Muramatsu, S; Shimada, H [Hitachi Ltd., Tokyo (Japan)]",
  "site_ownership_code" : "NEDO",
  "osti_id" : "6196317",
  "journal_issue" : "",
  "resource_type" : "PAT",
  "format" : "Medium: X; Size: Pages: (6 p)",
  "journal_name" : [ ],
  "contributing_organizations" : "",
  "citation_location" : "https://www.osti.gov/etdeweb/biblio/6196317",
  "publication_year" : 1990,
  "subject_list_commas" : "30 DIRECT ENERGY CONVERSION, ELECTRODES, MECHANICAL STRUCTURES, POLYCRYSTALS, SOLAR CELLS, ELECTRIC POTENTIAL, PHOTOVOLTAIC CONVERSION, AMORPHOUS STATE, CONTROL, EFFICIENCY, LAYERS, SATURATION, SILICON, CONVERSION, CRYSTALS, DIRECT ENERGY CONVERSION, DIRECT ENERGY CONVERTERS, ELEMENTS, ENERGY CONVERSION, EQUIPMENT, PHOTOELECTRIC CELLS, PHOTOVOLTAIC CELLS, SEMIMETALS, SOLAR EQUIPMENT, 300503* - Fuel Cells- Materials, Components, & Auxiliaries",
  "publisher" : "",
  "identifier_other" : "",
  "publisher_research" : "",
  "creators_list" : [ "Matsubara, T", "Ito, H", "Muramatsu, S", "Shimada, H [Hitachi Ltd., Tokyo (Japan)]" ],
  "doi" : "https://doi.org/"
}