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	       <dc:title>Amorphous silicon solar cell. Amorphous silicon taiyo denchi</dc:title>
	       <dc:creator>Matsubara, T; Ito, H; Muramatsu, S; Shimada, H [Hitachi Ltd., Tokyo (Japan)]</dc:creator>
	       <dc:subject>30 DIRECT ENERGY CONVERSION; ELECTRODES; MECHANICAL STRUCTURES; POLYCRYSTALS; SOLAR CELLS; ELECTRIC POTENTIAL; PHOTOVOLTAIC CONVERSION; AMORPHOUS STATE; CONTROL; EFFICIENCY; LAYERS; SATURATION; SILICON; CONVERSION; CRYSTALS; DIRECT ENERGY CONVERSION; DIRECT ENERGY CONVERTERS; ELEMENTS; ENERGY CONVERSION; EQUIPMENT; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMIMETALS; SOLAR EQUIPMENT; 300503* - Fuel Cells- Materials, Components, & Auxiliaries</dc:subject>
	       <dc:subjectRelated></dc:subjectRelated>
	       <dc:description>In the former technology, reduction and denaturing of the background, transparent electrode at the time of a-Si deposition are not completely prevented, which gave problems in enhancing high efficiency of the solar cell performances. This invention aims to provide a solar cell with high conversion efficiency, which requires no transparent electrode of an oxide; by reducing the resistance of the a-Si material, using this a-Si (which is a part of the main body of photoelectric conversion) as a light incidenting electrode. For this purpose, instead of using p- or n- layer of the light incidenting side in the pin structure (formerly a main photoelectric conversion boly), less resistant p {sub +} or n {sup +} layer film is formed; said film is used as an electrode on the light incidenting side, thus enabling to form a low resistant film either or n- or p- layer on the back side by forming a structure of p {sup +} in {sup +} or n {sup +} ip {sup +}. By using a fine silicon crystal or a fine Si-alloy crystal for p {sup +} or n {sup +} layer and their specific resistance being arranged to be 1.5 ohm-cm or less, thus setting up an a-Si solar cell. 8 figs.</dc:description>
	       <dcq:publisher></dcq:publisher>
	       <dcq:publisherResearch></dcq:publisherResearch>
	       <dcq:publisherAvailability>Available from Japan Patent Information Organization or International Patent Documentation Center</dcq:publisherAvailability>
	       <dcq:publisherSponsor></dcq:publisherSponsor>
	       <dcq:publisherCountry>Japan</dcq:publisherCountry>
		   <dc:contributingOrganizations></dc:contributingOrganizations>
	       <dc:date>1990-06-25</dc:date>
	       <dc:language>Japanese</dc:language>
	       <dc:type>Patent</dc:type>
	       <dcq:typeQualifier>Special Availability</dcq:typeQualifier>
	       <dc:relation>Patent File Date: 19 Dec 1988</dc:relation>
	       <dc:coverage></dc:coverage>
	       <dc:format>Medium: X; Size: Pages: (6 p)</dc:format>
	       <dc:doi>https://doi.org/</dc:doi>
	       <dc:identifier></dc:identifier>
		   <dc:journalName>[]</dc:journalName>
		   <dc:journalIssue></dc:journalIssue>
		   <dc:journalVolume></dc:journalVolume>
	       <dc:identifierReport>JP 2-164079</dc:identifierReport>
	       <dcq:identifierDOEcontract></dcq:identifierDOEcontract>
	       <dc:identifierOther></dc:identifierOther>
	       <dc:source>NEDO; NEDO-90-960428; EDB-91-010422</dc:source>
	       <dc:rights>Patent Assignee: Hitachi Ltd.</dc:rights>
	       <dc:dateEntry>2008-02-07</dc:dateEntry>
	       <dc:dateAdded></dc:dateAdded>
	       <dc:ostiId>6196317</dc:ostiId>
	       <dcq:identifier-purl></dcq:identifier-purl>
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