Abstract
It was attempted to develop a new film having characteristics of each of TiN and TiC by an activated reactive evaporation(ARE) process, a kind of ion plating. That is, a Ti-C-N film was formed by using titanium as evaporative source and nitrogen and acetylene gas as reactive gas. In the preliminary test for the deposition of the Ti-C-N film, a TiN film of Hv1600 was obtained. The conditions for depositing this film were as follows; electron gun output 10kV-175mA, N{sub 2} gas pressure 1{times}10{sup {minus}4}Torr, substrate heating temperature 400 centigrade, and substrate voltage 0.2kV. When the deposition of the Ti-C-N film was tried by mixing C{sub 2}H{sub 2}gas under the same conditions, hardness of the film decreased to around Hv1100-1300. As a result of the evaluation of physical properties of this film, it was found that crystallinity of the film was getting worse with the increasing ratio of mixed C{sub 2}H{sub 2} gas. It was thus recognized that the reaction of C{sub 2}H{sub 2} gas was not proceeded efficiently. 4 refs., 8 figs.
Kuwano, S;
Otake, T;
Mano, T
[1]
- Shizuoka Industrial Research Institute of Shizuoka Prefecture, Shizuoka (Japan)
Citation Formats
Kuwano, S, Otake, T, and Mano, T.
Deposition of Ti-C-N hard film by ion plating. Ion plating ni yoru Ti-C-N koshitsu himaku keisei.
Japan: N. p.,
1991.
Web.
Kuwano, S, Otake, T, & Mano, T.
Deposition of Ti-C-N hard film by ion plating. Ion plating ni yoru Ti-C-N koshitsu himaku keisei.
Japan.
Kuwano, S, Otake, T, and Mano, T.
1991.
"Deposition of Ti-C-N hard film by ion plating. Ion plating ni yoru Ti-C-N koshitsu himaku keisei."
Japan.
@misc{etde_5723850,
title = {Deposition of Ti-C-N hard film by ion plating. Ion plating ni yoru Ti-C-N koshitsu himaku keisei}
author = {Kuwano, S, Otake, T, and Mano, T}
abstractNote = {It was attempted to develop a new film having characteristics of each of TiN and TiC by an activated reactive evaporation(ARE) process, a kind of ion plating. That is, a Ti-C-N film was formed by using titanium as evaporative source and nitrogen and acetylene gas as reactive gas. In the preliminary test for the deposition of the Ti-C-N film, a TiN film of Hv1600 was obtained. The conditions for depositing this film were as follows; electron gun output 10kV-175mA, N{sub 2} gas pressure 1{times}10{sup {minus}4}Torr, substrate heating temperature 400 centigrade, and substrate voltage 0.2kV. When the deposition of the Ti-C-N film was tried by mixing C{sub 2}H{sub 2}gas under the same conditions, hardness of the film decreased to around Hv1100-1300. As a result of the evaluation of physical properties of this film, it was found that crystallinity of the film was getting worse with the increasing ratio of mixed C{sub 2}H{sub 2} gas. It was thus recognized that the reaction of C{sub 2}H{sub 2} gas was not proceeded efficiently. 4 refs., 8 figs.}
journal = []
volume = {36}
journal type = {AC}
place = {Japan}
year = {1991}
month = {Aug}
}
title = {Deposition of Ti-C-N hard film by ion plating. Ion plating ni yoru Ti-C-N koshitsu himaku keisei}
author = {Kuwano, S, Otake, T, and Mano, T}
abstractNote = {It was attempted to develop a new film having characteristics of each of TiN and TiC by an activated reactive evaporation(ARE) process, a kind of ion plating. That is, a Ti-C-N film was formed by using titanium as evaporative source and nitrogen and acetylene gas as reactive gas. In the preliminary test for the deposition of the Ti-C-N film, a TiN film of Hv1600 was obtained. The conditions for depositing this film were as follows; electron gun output 10kV-175mA, N{sub 2} gas pressure 1{times}10{sup {minus}4}Torr, substrate heating temperature 400 centigrade, and substrate voltage 0.2kV. When the deposition of the Ti-C-N film was tried by mixing C{sub 2}H{sub 2}gas under the same conditions, hardness of the film decreased to around Hv1100-1300. As a result of the evaluation of physical properties of this film, it was found that crystallinity of the film was getting worse with the increasing ratio of mixed C{sub 2}H{sub 2} gas. It was thus recognized that the reaction of C{sub 2}H{sub 2} gas was not proceeded efficiently. 4 refs., 8 figs.}
journal = []
volume = {36}
journal type = {AC}
place = {Japan}
year = {1991}
month = {Aug}
}