Abstract
In this paper, we report on the fabrication and optoelectronic properties of high sensitive phototransistors based on few-layered MoSe2 back-gated field-effect transistors, with a mobility of 19.7 cm{sup 2} V{sup −1} s{sup −1} at room temperature. We obtained an ultrahigh photoresponsivity of 97.1 AW{sup −1} and an external quantum efficiency (EQE) of 22 666% using 532 nm laser excitation at room temperature. The photoresponsivity was improved near the threshold gate voltage; however, the selection of the silicon dioxide as a gate oxide represents a limiting factor in the ultimate performance. Thanks to their high photoresponsivity and external quantum efficiency, the few-layered MoSe2-based devices are promising for photoelectronic applications. (paper)
Abderrahmane, A;
Ishizawa, S;
Sandhu, A;
[1]
Ko, P J;
Thu, T V;
Takamura, T
[2]
- Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580 (Japan)
- Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580 (Japan)
Citation Formats
Abderrahmane, A, Ishizawa, S, Sandhu, A, Ko, P J, Thu, T V, and Takamura, T.
High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors.
United Kingdom: N. p.,
2014.
Web.
doi:10.1088/0957-4484/25/36/365202.
Abderrahmane, A, Ishizawa, S, Sandhu, A, Ko, P J, Thu, T V, & Takamura, T.
High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors.
United Kingdom.
https://doi.org/10.1088/0957-4484/25/36/365202
Abderrahmane, A, Ishizawa, S, Sandhu, A, Ko, P J, Thu, T V, and Takamura, T.
2014.
"High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors."
United Kingdom.
https://doi.org/10.1088/0957-4484/25/36/365202.
@misc{etde_22377296,
title = {High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors}
author = {Abderrahmane, A, Ishizawa, S, Sandhu, A, Ko, P J, Thu, T V, and Takamura, T}
abstractNote = {In this paper, we report on the fabrication and optoelectronic properties of high sensitive phototransistors based on few-layered MoSe2 back-gated field-effect transistors, with a mobility of 19.7 cm{sup 2} V{sup −1} s{sup −1} at room temperature. We obtained an ultrahigh photoresponsivity of 97.1 AW{sup −1} and an external quantum efficiency (EQE) of 22 666% using 532 nm laser excitation at room temperature. The photoresponsivity was improved near the threshold gate voltage; however, the selection of the silicon dioxide as a gate oxide represents a limiting factor in the ultimate performance. Thanks to their high photoresponsivity and external quantum efficiency, the few-layered MoSe2-based devices are promising for photoelectronic applications. (paper)}
doi = {10.1088/0957-4484/25/36/365202}
journal = []
issue = {36}
volume = {25}
journal type = {AC}
place = {United Kingdom}
year = {2014}
month = {Aug}
}
title = {High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors}
author = {Abderrahmane, A, Ishizawa, S, Sandhu, A, Ko, P J, Thu, T V, and Takamura, T}
abstractNote = {In this paper, we report on the fabrication and optoelectronic properties of high sensitive phototransistors based on few-layered MoSe2 back-gated field-effect transistors, with a mobility of 19.7 cm{sup 2} V{sup −1} s{sup −1} at room temperature. We obtained an ultrahigh photoresponsivity of 97.1 AW{sup −1} and an external quantum efficiency (EQE) of 22 666% using 532 nm laser excitation at room temperature. The photoresponsivity was improved near the threshold gate voltage; however, the selection of the silicon dioxide as a gate oxide represents a limiting factor in the ultimate performance. Thanks to their high photoresponsivity and external quantum efficiency, the few-layered MoSe2-based devices are promising for photoelectronic applications. (paper)}
doi = {10.1088/0957-4484/25/36/365202}
journal = []
issue = {36}
volume = {25}
journal type = {AC}
place = {United Kingdom}
year = {2014}
month = {Aug}
}