{
  "date" : "2014-08-20",
  "identifier_doecontract" : "",
  "subject" : "77 NANOSCIENCE AND NANOTECHNOLOGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRIC POTENTIAL; EXCITATION; FABRICATION; FIELD EFFECT TRANSISTORS; MOBILITY; OPTOELECTRONIC DEVICES; PERFORMANCE; PHOTOSENSITIVITY; PHOTOTRANSISTORS; QUANTUM EFFICIENCY; SILICON OXIDES; TEMPERATURE RANGE 0273-0400 K",
  "description" : "In this paper, we report on the fabrication and optoelectronic properties of high sensitive phototransistors based on few-layered MoSe2 back-gated field-effect transistors, with a mobility of 19.7 cm{sup 2} V{sup −1} s{sup −1} at room temperature. We obtained an ultrahigh photoresponsivity of 97.1 AW{sup −1} and an external quantum efficiency (EQE) of 22 666% using 532 nm laser excitation at room temperature. The photoresponsivity was improved near the threshold gate voltage; however, the selection of the silicon dioxide as a gate oxide represents a limiting factor in the ultimate performance. Thanks to their high photoresponsivity and external quantum efficiency, the few-layered MoSe2-based devices are promising for photoelectronic applications. (paper)",
  "language" : "English",
  "identifier_report" : "",
  "publisher_sponsor" : "",
  "publisher_country" : "United Kingdom",
  "source" : "INIS",
  "purl" : "",
  "title" : "High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors",
  "type" : "Journal Article",
  "subject_related" : "",
  "relation" : "Journal Name: Nanotechnology (Print); Journal Volume: 25; Journal Issue: 36; Other Information: Country of input: International Atomic Energy Agency (IAEA)",
  "entry_date" : "2015-08-13",
  "subject_list" : [ "77 NANOSCIENCE AND NANOTECHNOLOGY", "71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS", "ELECTRIC POTENTIAL", "EXCITATION", "FABRICATION", "FIELD EFFECT TRANSISTORS", "MOBILITY", "OPTOELECTRONIC DEVICES", "PERFORMANCE", "PHOTOSENSITIVITY", "PHOTOTRANSISTORS", "QUANTUM EFFICIENCY", "SILICON OXIDES", "TEMPERATURE RANGE 0273-0400 K" ],
  "publisher_availability" : "Available from http://dx.doi.org/10.1088/0957-4484/25/36/365202",
  "rights" : "",
  "announced_date" : "2015-08-13",
  "type_qualifier" : "",
  "has_fulltext" : false,
  "coverage" : "",
  "identifier" : "",
  "journal_volume" : "25",
  "creator" : "Abderrahmane, A; Ishizawa, S; Sandhu, A [Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580 (Japan)]; Ko, P J; Thu, T V; Takamura, T [Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580 (Japan)]",
  "site_ownership_code" : "INIS",
  "osti_id" : "22377296",
  "journal_issue" : "36",
  "resource_type" : "JOUR",
  "format" : "Medium: X; Size: [5 page(s)]",
  "journal_name" : [ ],
  "contributing_organizations" : "",
  "citation_location" : "https://www.osti.gov/etdeweb/biblio/22377296",
  "publication_year" : 2014,
  "subject_list_commas" : "77 NANOSCIENCE AND NANOTECHNOLOGY, 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS, ELECTRIC POTENTIAL, EXCITATION, FABRICATION, FIELD EFFECT TRANSISTORS, MOBILITY, OPTOELECTRONIC DEVICES, PERFORMANCE, PHOTOSENSITIVITY, PHOTOTRANSISTORS, QUANTUM EFFICIENCY, SILICON OXIDES, TEMPERATURE RANGE 0273-0400 K",
  "publisher" : "",
  "identifier_other" : "Journal ID: ISSN 0957-4484; TRN: GB15P4420082758",
  "publisher_research" : "",
  "creators_list" : [ "Abderrahmane, A", "Ishizawa, S", "Sandhu, A [Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580 (Japan)]", "Ko, P J", "Thu, T V", "Takamura, T [Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580 (Japan)]" ],
  "doi" : "https://doi.org/10.1088/0957-4484/25/36/365202"
}