High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors Abderrahmane, A; Ishizawa, S; Sandhu, A [Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580 (Japan)]; Ko, P J; Thu, T V; Takamura, T [Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580 (Japan)] 77 NANOSCIENCE AND NANOTECHNOLOGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRIC POTENTIAL; EXCITATION; FABRICATION; FIELD EFFECT TRANSISTORS; MOBILITY; OPTOELECTRONIC DEVICES; PERFORMANCE; PHOTOSENSITIVITY; PHOTOTRANSISTORS; QUANTUM EFFICIENCY; SILICON OXIDES; TEMPERATURE RANGE 0273-0400 K In this paper, we report on the fabrication and optoelectronic properties of high sensitive phototransistors based on few-layered MoSe2 back-gated field-effect transistors, with a mobility of 19.7 cm{sup 2} V{sup −1} s{sup −1} at room temperature. We obtained an ultrahigh photoresponsivity of 97.1 AW{sup −1} and an external quantum efficiency (EQE) of 22 666% using 532 nm laser excitation at room temperature. The photoresponsivity was improved near the threshold gate voltage; however, the selection of the silicon dioxide as a gate oxide represents a limiting factor in the ultimate performance. Thanks to their high photoresponsivity and external quantum efficiency, the few-layered MoSe2-based devices are promising for photoelectronic applications. (paper) Available from http://dx.doi.org/10.1088/0957-4484/25/36/365202 United Kingdom 2014-08-20 English Journal Article Journal Name: Nanotechnology (Print); Journal Volume: 25; Journal Issue: 36; Other Information: Country of input: International Atomic Energy Agency (IAEA) Medium: X; Size: [5 page(s)] https://doi.org/10.1088/0957-4484/25/36/365202 [] 36 25 Journal ID: ISSN 0957-4484; TRN: GB15P4420082758 INIS 2015-08-13 22377296