Abstract
In this work, we describe compositionally tunable Al{sub x}Ga{sub 1−x}N nanowires (0.66 ≤ x ≤ 1) grown on Si (1 0 0) substrates using a chemical vapor deposition (CVD) process. The composition of Al{sub x}Ga{sub 1−x}N nanowires may be tuned by adjusting the vapor temperature of the AlCl{sub 3} and GaCl{sub 3} used in its production. The structural, chemical and optical properties of the Al{sub x}Ga{sub 1−x}N nanowires are investigated using X-ray diffractometry (XRD), field emission scanning electron microscopy (FESEM), X-ray energy-dispersive spectroscopy (EDS), transmission electron microscopy (TEM) and Raman spectroscopy. All the Al{sub x}Ga{sub 1−x}N nanowires exhibit a preferred c-axis orientation. Raman analysis shows that the E{sub 2}{sup 2} phonon exhibits two-mode behavior. The positions of the AlN-like E{sub 2}{sup 2}, GaN-like E{sub 2}{sup 2} and A{sub 1}(TO) modes shift toward higher frequencies as the amount of Al increases. The growth of these Al{sub x}Ga{sub 1−x}N nanowires has been proposed to follow a vapor–solid–solid (VSS) mechanism.
Chen, Fei;
[1]
State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641 (China)];
Ji, Xiaohong;
[1]
Lu, Zhenya;
Shen, Yanhua;
[1]
Zhang, Qinyuan;
[1]
State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641 (China)]
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China)
Citation Formats
Chen, Fei, State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641 (China)], Ji, Xiaohong, Lu, Zhenya, Shen, Yanhua, Zhang, Qinyuan, and State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641 (China)].
Structural and Raman properties of compositionally tunable Al{sub x}Ga{sub 1−x}N (0.66 ≤ x ≤ 1) nanowires.
Netherlands: N. p.,
2014.
Web.
doi:10.1016/J.MSEB.2013.12.001.
Chen, Fei, State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641 (China)], Ji, Xiaohong, Lu, Zhenya, Shen, Yanhua, Zhang, Qinyuan, & State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641 (China)].
Structural and Raman properties of compositionally tunable Al{sub x}Ga{sub 1−x}N (0.66 ≤ x ≤ 1) nanowires.
Netherlands.
https://doi.org/10.1016/J.MSEB.2013.12.001
Chen, Fei, State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641 (China)], Ji, Xiaohong, Lu, Zhenya, Shen, Yanhua, Zhang, Qinyuan, and State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641 (China)].
2014.
"Structural and Raman properties of compositionally tunable Al{sub x}Ga{sub 1−x}N (0.66 ≤ x ≤ 1) nanowires."
Netherlands.
https://doi.org/10.1016/J.MSEB.2013.12.001.
@misc{etde_22319996,
title = {Structural and Raman properties of compositionally tunable Al{sub x}Ga{sub 1−x}N (0.66 ≤ x ≤ 1) nanowires}
author = {Chen, Fei, State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641 (China)], Ji, Xiaohong, Lu, Zhenya, Shen, Yanhua, Zhang, Qinyuan, and State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641 (China)]}
abstractNote = {In this work, we describe compositionally tunable Al{sub x}Ga{sub 1−x}N nanowires (0.66 ≤ x ≤ 1) grown on Si (1 0 0) substrates using a chemical vapor deposition (CVD) process. The composition of Al{sub x}Ga{sub 1−x}N nanowires may be tuned by adjusting the vapor temperature of the AlCl{sub 3} and GaCl{sub 3} used in its production. The structural, chemical and optical properties of the Al{sub x}Ga{sub 1−x}N nanowires are investigated using X-ray diffractometry (XRD), field emission scanning electron microscopy (FESEM), X-ray energy-dispersive spectroscopy (EDS), transmission electron microscopy (TEM) and Raman spectroscopy. All the Al{sub x}Ga{sub 1−x}N nanowires exhibit a preferred c-axis orientation. Raman analysis shows that the E{sub 2}{sup 2} phonon exhibits two-mode behavior. The positions of the AlN-like E{sub 2}{sup 2}, GaN-like E{sub 2}{sup 2} and A{sub 1}(TO) modes shift toward higher frequencies as the amount of Al increases. The growth of these Al{sub x}Ga{sub 1−x}N nanowires has been proposed to follow a vapor–solid–solid (VSS) mechanism.}
doi = {10.1016/J.MSEB.2013.12.001}
journal = []
volume = {183}
journal type = {AC}
place = {Netherlands}
year = {2014}
month = {Apr}
}
title = {Structural and Raman properties of compositionally tunable Al{sub x}Ga{sub 1−x}N (0.66 ≤ x ≤ 1) nanowires}
author = {Chen, Fei, State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641 (China)], Ji, Xiaohong, Lu, Zhenya, Shen, Yanhua, Zhang, Qinyuan, and State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641 (China)]}
abstractNote = {In this work, we describe compositionally tunable Al{sub x}Ga{sub 1−x}N nanowires (0.66 ≤ x ≤ 1) grown on Si (1 0 0) substrates using a chemical vapor deposition (CVD) process. The composition of Al{sub x}Ga{sub 1−x}N nanowires may be tuned by adjusting the vapor temperature of the AlCl{sub 3} and GaCl{sub 3} used in its production. The structural, chemical and optical properties of the Al{sub x}Ga{sub 1−x}N nanowires are investigated using X-ray diffractometry (XRD), field emission scanning electron microscopy (FESEM), X-ray energy-dispersive spectroscopy (EDS), transmission electron microscopy (TEM) and Raman spectroscopy. All the Al{sub x}Ga{sub 1−x}N nanowires exhibit a preferred c-axis orientation. Raman analysis shows that the E{sub 2}{sup 2} phonon exhibits two-mode behavior. The positions of the AlN-like E{sub 2}{sup 2}, GaN-like E{sub 2}{sup 2} and A{sub 1}(TO) modes shift toward higher frequencies as the amount of Al increases. The growth of these Al{sub x}Ga{sub 1−x}N nanowires has been proposed to follow a vapor–solid–solid (VSS) mechanism.}
doi = {10.1016/J.MSEB.2013.12.001}
journal = []
volume = {183}
journal type = {AC}
place = {Netherlands}
year = {2014}
month = {Apr}
}