{
  "date" : "2014-04-01",
  "identifier_doecontract" : "",
  "subject" : "36 MATERIALS SCIENCE; ALUMINIUM CHLORIDES; ALUMINIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; FIELD EMISSION; GALLIUM CHLORIDES; GALLIUM NITRIDES; NANOWIRES; OPTICAL PROPERTIES; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; X RADIATION; X-RAY DIFFRACTION",
  "description" : "In this work, we describe compositionally tunable Al{sub x}Ga{sub 1−x}N nanowires (0.66 ≤ x ≤ 1) grown on Si (1 0 0) substrates using a chemical vapor deposition (CVD) process. The composition of Al{sub x}Ga{sub 1−x}N nanowires may be tuned by adjusting the vapor temperature of the AlCl{sub 3} and GaCl{sub 3} used in its production. The structural, chemical and optical properties of the Al{sub x}Ga{sub 1−x}N nanowires are investigated using X-ray diffractometry (XRD), field emission scanning electron microscopy (FESEM), X-ray energy-dispersive spectroscopy (EDS), transmission electron microscopy (TEM) and Raman spectroscopy. All the Al{sub x}Ga{sub 1−x}N nanowires exhibit a preferred c-axis orientation. Raman analysis shows that the E{sub 2}{sup 2} phonon exhibits two-mode behavior. The positions of the AlN-like E{sub 2}{sup 2}, GaN-like E{sub 2}{sup 2} and A{sub 1}(TO) modes shift toward higher frequencies as the amount of Al increases. The growth of these Al{sub x}Ga{sub 1−x}N nanowires has been proposed to follow a vapor–solid–solid (VSS) mechanism.",
  "language" : "English",
  "identifier_report" : "",
  "publisher_sponsor" : "",
  "publisher_country" : "Netherlands",
  "source" : "NLN",
  "purl" : "",
  "title" : "Structural and Raman properties of compositionally tunable Al{sub x}Ga{sub 1−x}N (0.66 ≤ x ≤ 1) nanowires",
  "type" : "Journal Article",
  "subject_related" : "",
  "relation" : "Journal Name: Materials Science and Engineering. B, Solid-State Materials for Advanced Technology; Journal Volume: 183; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)",
  "entry_date" : "2015-03-31",
  "subject_list" : [ "36 MATERIALS SCIENCE", "ALUMINIUM CHLORIDES", "ALUMINIUM NITRIDES", "CHEMICAL VAPOR DEPOSITION", "FIELD EMISSION", "GALLIUM CHLORIDES", "GALLIUM NITRIDES", "NANOWIRES", "OPTICAL PROPERTIES", "RAMAN SPECTROSCOPY", "SCANNING ELECTRON MICROSCOPY", "TRANSMISSION ELECTRON MICROSCOPY", "VAPORS", "X RADIATION", "X-RAY DIFFRACTION" ],
  "publisher_availability" : "Available from http://dx.doi.org/10.1016/j.mseb.2013.12.001",
  "rights" : "",
  "announced_date" : "2015-03-31",
  "type_qualifier" : "",
  "has_fulltext" : false,
  "coverage" : "",
  "identifier" : "PII: S0921-5107(13)00418-2",
  "journal_volume" : "183",
  "creator" : "Chen, Fei [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China)]; State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641 (China)]; Ji, Xiaohong [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China)]; Lu, Zhenya; Shen, Yanhua [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China)]; Zhang, Qinyuan [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China)]; State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641 (China)]",
  "site_ownership_code" : "NLN",
  "osti_id" : "22319996",
  "journal_issue" : "",
  "resource_type" : "JOUR",
  "format" : "Medium: X; Size: page(s) 24-28",
  "journal_name" : [ ],
  "contributing_organizations" : "",
  "citation_location" : "https://www.osti.gov/etdeweb/biblio/22319996",
  "publication_year" : 2014,
  "subject_list_commas" : "36 MATERIALS SCIENCE, ALUMINIUM CHLORIDES, ALUMINIUM NITRIDES, CHEMICAL VAPOR DEPOSITION, FIELD EMISSION, GALLIUM CHLORIDES, GALLIUM NITRIDES, NANOWIRES, OPTICAL PROPERTIES, RAMAN SPECTROSCOPY, SCANNING ELECTRON MICROSCOPY, TRANSMISSION ELECTRON MICROSCOPY, VAPORS, X RADIATION, X-RAY DIFFRACTION",
  "publisher" : "",
  "identifier_other" : "Journal ID: ISSN 0921-5107; CODEN: MSBTEK; Other: PII: S0921-5107(13)00418-2; TRN: NL15R2503026198",
  "publisher_research" : "",
  "creators_list" : [ "Chen, Fei [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China)]", "State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641 (China)]", "Ji, Xiaohong [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China)]", "Lu, Zhenya", "Shen, Yanhua [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China)]", "Zhang, Qinyuan [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China)]", "State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641 (China)]" ],
  "doi" : "https://doi.org/10.1016/J.MSEB.2013.12.001"
}