Structural and Raman properties of compositionally tunable Al{sub x}Ga{sub 1−x}N (0.66 ≤ x ≤ 1) nanowires Chen, Fei [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China)]; State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641 (China)]; Ji, Xiaohong [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China)]; Lu, Zhenya; Shen, Yanhua [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China)]; Zhang, Qinyuan [School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641 (China)]; State Key Laboratory of Luminescent Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641 (China)] 36 MATERIALS SCIENCE; ALUMINIUM CHLORIDES; ALUMINIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; FIELD EMISSION; GALLIUM CHLORIDES; GALLIUM NITRIDES; NANOWIRES; OPTICAL PROPERTIES; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; X RADIATION; X-RAY DIFFRACTION In this work, we describe compositionally tunable Al{sub x}Ga{sub 1−x}N nanowires (0.66 ≤ x ≤ 1) grown on Si (1 0 0) substrates using a chemical vapor deposition (CVD) process. The composition of Al{sub x}Ga{sub 1−x}N nanowires may be tuned by adjusting the vapor temperature of the AlCl{sub 3} and GaCl{sub 3} used in its production. The structural, chemical and optical properties of the Al{sub x}Ga{sub 1−x}N nanowires are investigated using X-ray diffractometry (XRD), field emission scanning electron microscopy (FESEM), X-ray energy-dispersive spectroscopy (EDS), transmission electron microscopy (TEM) and Raman spectroscopy. All the Al{sub x}Ga{sub 1−x}N nanowires exhibit a preferred c-axis orientation. Raman analysis shows that the E{sub 2}{sup 2} phonon exhibits two-mode behavior. The positions of the AlN-like E{sub 2}{sup 2}, GaN-like E{sub 2}{sup 2} and A{sub 1}(TO) modes shift toward higher frequencies as the amount of Al increases. The growth of these Al{sub x}Ga{sub 1−x}N nanowires has been proposed to follow a vapor–solid–solid (VSS) mechanism. Available from http://dx.doi.org/10.1016/j.mseb.2013.12.001 Netherlands 2014-04-01 English Journal Article Journal Name: Materials Science and Engineering. B, Solid-State Materials for Advanced Technology; Journal Volume: 183; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA) Medium: X; Size: page(s) 24-28 https://doi.org/10.1016/J.MSEB.2013.12.001 PII: S0921-5107(13)00418-2 [] 183 Journal ID: ISSN 0921-5107; CODEN: MSBTEK; Other: PII: S0921-5107(13)00418-2; TRN: NL15R2503026198 NLN 2015-03-31 22319996