Abstract
This paper investigates the capacitance-voltage (C-V) characteristics of F doping SiCOH low dielectric constant films metal-insulator-semiconductor structure. The F doping SiCOH films are deposited by decamethylcyclopentasiloxane (DMCPS) and trifluromethane (CHF3) electron cyclotron resonance plasmas. With the CHF{sub 3}/DMCPS flow rate ratio from 0 to 0.52, the positive excursion of C-V curves and the increase of flat-band voltage V{sub FB} from -6.1 V to 32.2 V are obtained. The excursion of C-V curves and the shift of V{sub FB} are related to the change of defects density and type at the Si/SiCOH interface due to the decrease of Si and O concentrations, and the increase of F concentration. At the CHF{sub 3}/DMCPS flow rate ratio is 0.12, the compensation of F-bonding dangling bond to Si dangling bond leads to a small V{sub FB} of 2.0 V. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
Chao, Ye;
Zhao-Yuan, Ning
[1]
- School of Physics Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006 (China)
Citation Formats
Chao, Ye, and Zhao-Yuan, Ning.
Effect of F doping on capacitance-voltage characteristics of SiCOH low-k films metal-insulator-semiconductor structure.
China: N. p.,
2010.
Web.
doi:10.1088/1674-1056/19/5/057701.
Chao, Ye, & Zhao-Yuan, Ning.
Effect of F doping on capacitance-voltage characteristics of SiCOH low-k films metal-insulator-semiconductor structure.
China.
https://doi.org/10.1088/1674-1056/19/5/057701
Chao, Ye, and Zhao-Yuan, Ning.
2010.
"Effect of F doping on capacitance-voltage characteristics of SiCOH low-k films metal-insulator-semiconductor structure."
China.
https://doi.org/10.1088/1674-1056/19/5/057701.
@misc{etde_22185129,
title = {Effect of F doping on capacitance-voltage characteristics of SiCOH low-k films metal-insulator-semiconductor structure}
author = {Chao, Ye, and Zhao-Yuan, Ning}
abstractNote = {This paper investigates the capacitance-voltage (C-V) characteristics of F doping SiCOH low dielectric constant films metal-insulator-semiconductor structure. The F doping SiCOH films are deposited by decamethylcyclopentasiloxane (DMCPS) and trifluromethane (CHF3) electron cyclotron resonance plasmas. With the CHF{sub 3}/DMCPS flow rate ratio from 0 to 0.52, the positive excursion of C-V curves and the increase of flat-band voltage V{sub FB} from -6.1 V to 32.2 V are obtained. The excursion of C-V curves and the shift of V{sub FB} are related to the change of defects density and type at the Si/SiCOH interface due to the decrease of Si and O concentrations, and the increase of F concentration. At the CHF{sub 3}/DMCPS flow rate ratio is 0.12, the compensation of F-bonding dangling bond to Si dangling bond leads to a small V{sub FB} of 2.0 V. (condensed matter: electronic structure, electrical, magnetic, and optical properties)}
doi = {10.1088/1674-1056/19/5/057701}
journal = []
issue = {5}
volume = {19}
journal type = {AC}
place = {China}
year = {2010}
month = {May}
}
title = {Effect of F doping on capacitance-voltage characteristics of SiCOH low-k films metal-insulator-semiconductor structure}
author = {Chao, Ye, and Zhao-Yuan, Ning}
abstractNote = {This paper investigates the capacitance-voltage (C-V) characteristics of F doping SiCOH low dielectric constant films metal-insulator-semiconductor structure. The F doping SiCOH films are deposited by decamethylcyclopentasiloxane (DMCPS) and trifluromethane (CHF3) electron cyclotron resonance plasmas. With the CHF{sub 3}/DMCPS flow rate ratio from 0 to 0.52, the positive excursion of C-V curves and the increase of flat-band voltage V{sub FB} from -6.1 V to 32.2 V are obtained. The excursion of C-V curves and the shift of V{sub FB} are related to the change of defects density and type at the Si/SiCOH interface due to the decrease of Si and O concentrations, and the increase of F concentration. At the CHF{sub 3}/DMCPS flow rate ratio is 0.12, the compensation of F-bonding dangling bond to Si dangling bond leads to a small V{sub FB} of 2.0 V. (condensed matter: electronic structure, electrical, magnetic, and optical properties)}
doi = {10.1088/1674-1056/19/5/057701}
journal = []
issue = {5}
volume = {19}
journal type = {AC}
place = {China}
year = {2010}
month = {May}
}