{
  "date" : "2010-05-15",
  "identifier_doecontract" : "",
  "subject" : "75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPACITANCE; CONCENTRATION RATIO; DIAGRAMS; ELECTRIC POTENTIAL; ELECTRON CYCLOTRON-RESONANCE; ELECTRONIC STRUCTURE; FLOW RATE; FLUORINE; FLUOROFORM; HETEROJUNCTIONS; INTERFACES; PERMITTIVITY; PLASMA; SILICON COMPOUNDS; THIN FILMS",
  "description" : "This paper investigates the capacitance-voltage (C-V) characteristics of F doping SiCOH low dielectric constant films metal-insulator-semiconductor structure. The F doping SiCOH films are deposited by decamethylcyclopentasiloxane (DMCPS) and trifluromethane (CHF3) electron cyclotron resonance plasmas. With the CHF{sub 3}/DMCPS flow rate ratio from 0 to 0.52, the positive excursion of C-V curves and the increase of flat-band voltage V{sub FB} from -6.1 V to 32.2 V are obtained. The excursion of C-V curves and the shift of V{sub FB} are related to the change of defects density and type at the Si/SiCOH interface due to the decrease of Si and O concentrations, and the increase of F concentration. At the CHF{sub 3}/DMCPS flow rate ratio is 0.12, the compensation of F-bonding dangling bond to Si dangling bond leads to a small V{sub FB} of 2.0 V. (condensed matter: electronic structure, electrical, magnetic, and optical properties)",
  "language" : "English",
  "identifier_report" : "",
  "publisher_sponsor" : "",
  "publisher_country" : "China",
  "source" : "INIS",
  "purl" : "",
  "title" : "Effect of F doping on capacitance-voltage characteristics of SiCOH low-k films metal-insulator-semiconductor structure",
  "type" : "Journal Article",
  "subject_related" : "",
  "relation" : "Journal Name: Chinese Physics. B; Journal Volume: 19; Journal Issue: 5; Other Information: Country of input: International Atomic Energy Agency (IAEA)",
  "entry_date" : "2014-02-06",
  "subject_list" : [ "75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY", "CAPACITANCE", "CONCENTRATION RATIO", "DIAGRAMS", "ELECTRIC POTENTIAL", "ELECTRON CYCLOTRON-RESONANCE", "ELECTRONIC STRUCTURE", "FLOW RATE", "FLUORINE", "FLUOROFORM", "HETEROJUNCTIONS", "INTERFACES", "PERMITTIVITY", "PLASMA", "SILICON COMPOUNDS", "THIN FILMS" ],
  "publisher_availability" : "Available from http://dx.doi.org/10.1088/1674-1056/19/5/057701",
  "rights" : "",
  "announced_date" : "2014-02-06",
  "type_qualifier" : "",
  "has_fulltext" : false,
  "coverage" : "",
  "identifier" : "",
  "journal_volume" : "19",
  "creator" : "Chao, Ye; Zhao-Yuan, Ning [School of Physics Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006 (China)]",
  "site_ownership_code" : "INIS",
  "osti_id" : "22185129",
  "journal_issue" : "5",
  "resource_type" : "JOUR",
  "format" : "Medium: X; Size: [5 page(s)]",
  "journal_name" : [ ],
  "contributing_organizations" : "",
  "citation_location" : "https://www.osti.gov/etdeweb/biblio/22185129",
  "publication_year" : 2010,
  "subject_list_commas" : "75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY, CAPACITANCE, CONCENTRATION RATIO, DIAGRAMS, ELECTRIC POTENTIAL, ELECTRON CYCLOTRON-RESONANCE, ELECTRONIC STRUCTURE, FLOW RATE, FLUORINE, FLUOROFORM, HETEROJUNCTIONS, INTERFACES, PERMITTIVITY, PLASMA, SILICON COMPOUNDS, THIN FILMS",
  "publisher" : "",
  "identifier_other" : "Journal ID: ISSN 1674-1056; TRN: CN13H5152009589",
  "publisher_research" : "",
  "creators_list" : [ "Chao, Ye", "Zhao-Yuan, Ning [School of Physics Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006 (China)]" ],
  "doi" : "https://doi.org/10.1088/1674-1056/19/5/057701"
}