Effect of F doping on capacitance-voltage characteristics of SiCOH low-k films metal-insulator-semiconductor structure Chao, Ye; Zhao-Yuan, Ning [School of Physics Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006 (China)] 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPACITANCE; CONCENTRATION RATIO; DIAGRAMS; ELECTRIC POTENTIAL; ELECTRON CYCLOTRON-RESONANCE; ELECTRONIC STRUCTURE; FLOW RATE; FLUORINE; FLUOROFORM; HETEROJUNCTIONS; INTERFACES; PERMITTIVITY; PLASMA; SILICON COMPOUNDS; THIN FILMS This paper investigates the capacitance-voltage (C-V) characteristics of F doping SiCOH low dielectric constant films metal-insulator-semiconductor structure. The F doping SiCOH films are deposited by decamethylcyclopentasiloxane (DMCPS) and trifluromethane (CHF3) electron cyclotron resonance plasmas. With the CHF{sub 3}/DMCPS flow rate ratio from 0 to 0.52, the positive excursion of C-V curves and the increase of flat-band voltage V{sub FB} from -6.1 V to 32.2 V are obtained. The excursion of C-V curves and the shift of V{sub FB} are related to the change of defects density and type at the Si/SiCOH interface due to the decrease of Si and O concentrations, and the increase of F concentration. At the CHF{sub 3}/DMCPS flow rate ratio is 0.12, the compensation of F-bonding dangling bond to Si dangling bond leads to a small V{sub FB} of 2.0 V. (condensed matter: electronic structure, electrical, magnetic, and optical properties) Available from http://dx.doi.org/10.1088/1674-1056/19/5/057701 China 2010-05-15 English Journal Article Journal Name: Chinese Physics. B; Journal Volume: 19; Journal Issue: 5; Other Information: Country of input: International Atomic Energy Agency (IAEA) Medium: X; Size: [5 page(s)] https://doi.org/10.1088/1674-1056/19/5/057701 [] 5 19 Journal ID: ISSN 1674-1056; TRN: CN13H5152009589 INIS 2014-02-06 22185129