Abstract
VO{sub 2} thin film synthesized by a novel sputtering oxidation coupling (SOC) method has been successfully fabricated. The experimental results show that the optimum oxidation time is 285 s and the thin film exhibits a good metal-insulator transition (MIT) approximately at 340 K. The corresponding structures and surface compositions of the films have been characterized by X-ray diffractometer and X-ray photoelectron spectroscopy separately.
Xu Xiaofeng, E-mail: xxf61@163.com;
[1]
Anyuan, Yin;
[2]
Xiliang, Du;
[3]
Wang Jiqing, E-mail: jqwang@ee.ecnu.edu.cn;
[4]
Jiading, Liu;
Xinfeng, He;
Xingxing, Liu;
[1]
Yilong, Huan
[5]
- Department of Applied Physics, Donghua University, Shanghai 201620 (China)
- Department of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200433 (China)
- Electronic Engineering Institute, Hei Longjiang University, Harbin 150080 (China)
- Key Laboratory of Polarized Materials and Devices, East China Normal University, Shanghai 200062 (China)
- College of Textiles, Donghua University, Shanghai 201620 (China)
Citation Formats
Xu Xiaofeng, E-mail: xxf61@163.com, Anyuan, Yin, Xiliang, Du, Wang Jiqing, E-mail: jqwang@ee.ecnu.edu.cn, Jiading, Liu, Xinfeng, He, Xingxing, Liu, and Yilong, Huan.
A novel sputtering oxidation coupling (SOC) method to fabricate VO{sub 2} thin film.
Netherlands: N. p.,
2010.
Web.
doi:10.1016/J.APSUSC.2009.11.022.
Xu Xiaofeng, E-mail: xxf61@163.com, Anyuan, Yin, Xiliang, Du, Wang Jiqing, E-mail: jqwang@ee.ecnu.edu.cn, Jiading, Liu, Xinfeng, He, Xingxing, Liu, & Yilong, Huan.
A novel sputtering oxidation coupling (SOC) method to fabricate VO{sub 2} thin film.
Netherlands.
https://doi.org/10.1016/J.APSUSC.2009.11.022
Xu Xiaofeng, E-mail: xxf61@163.com, Anyuan, Yin, Xiliang, Du, Wang Jiqing, E-mail: jqwang@ee.ecnu.edu.cn, Jiading, Liu, Xinfeng, He, Xingxing, Liu, and Yilong, Huan.
2010.
"A novel sputtering oxidation coupling (SOC) method to fabricate VO{sub 2} thin film."
Netherlands.
https://doi.org/10.1016/J.APSUSC.2009.11.022.
@misc{etde_22058049,
title = {A novel sputtering oxidation coupling (SOC) method to fabricate VO{sub 2} thin film}
author = {Xu Xiaofeng, E-mail: xxf61@163.com, Anyuan, Yin, Xiliang, Du, Wang Jiqing, E-mail: jqwang@ee.ecnu.edu.cn, Jiading, Liu, Xinfeng, He, Xingxing, Liu, and Yilong, Huan}
abstractNote = {VO{sub 2} thin film synthesized by a novel sputtering oxidation coupling (SOC) method has been successfully fabricated. The experimental results show that the optimum oxidation time is 285 s and the thin film exhibits a good metal-insulator transition (MIT) approximately at 340 K. The corresponding structures and surface compositions of the films have been characterized by X-ray diffractometer and X-ray photoelectron spectroscopy separately.}
doi = {10.1016/J.APSUSC.2009.11.022}
journal = []
issue = {9}
volume = {256}
journal type = {AC}
place = {Netherlands}
year = {2010}
month = {Feb}
}
title = {A novel sputtering oxidation coupling (SOC) method to fabricate VO{sub 2} thin film}
author = {Xu Xiaofeng, E-mail: xxf61@163.com, Anyuan, Yin, Xiliang, Du, Wang Jiqing, E-mail: jqwang@ee.ecnu.edu.cn, Jiading, Liu, Xinfeng, He, Xingxing, Liu, and Yilong, Huan}
abstractNote = {VO{sub 2} thin film synthesized by a novel sputtering oxidation coupling (SOC) method has been successfully fabricated. The experimental results show that the optimum oxidation time is 285 s and the thin film exhibits a good metal-insulator transition (MIT) approximately at 340 K. The corresponding structures and surface compositions of the films have been characterized by X-ray diffractometer and X-ray photoelectron spectroscopy separately.}
doi = {10.1016/J.APSUSC.2009.11.022}
journal = []
issue = {9}
volume = {256}
journal type = {AC}
place = {Netherlands}
year = {2010}
month = {Feb}
}