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	       <dc:title>A novel sputtering oxidation coupling (SOC) method to fabricate VO{sub 2} thin film</dc:title>
	       <dc:creator>Xu Xiaofeng, E-mail: xxf61@163.com [Department of Applied Physics, Donghua University, Shanghai 201620 (China)]; Anyuan, Yin [Department of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200433 (China)]; Xiliang, Du [Electronic Engineering Institute, Hei Longjiang University, Harbin 150080 (China)]; Wang Jiqing, E-mail: jqwang@ee.ecnu.edu.cn [Key Laboratory of Polarized Materials and Devices, East China Normal University, Shanghai 200062 (China)]; Jiading, Liu; Xinfeng, He; Xingxing, Liu [Department of Applied Physics, Donghua University, Shanghai 201620 (China)]; Yilong, Huan [College of Textiles, Donghua University, Shanghai 201620 (China)]</dc:creator>
	       <dc:subject>75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COUPLING; METALS; OXIDATION; SURFACES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; VANADIUM OXIDES; X-RAY DIFFRACTOMETERS; X-RAY PHOTOELECTRON SPECTROSCOPY</dc:subject>
	       <dc:subjectRelated></dc:subjectRelated>
	       <dc:description>VO{sub 2} thin film synthesized by a novel sputtering oxidation coupling (SOC) method has been successfully fabricated. The experimental results show that the optimum oxidation time is 285 s and the thin film exhibits a good metal-insulator transition (MIT) approximately at 340 K. The corresponding structures and surface compositions of the films have been characterized by X-ray diffractometer and X-ray photoelectron spectroscopy separately.</dc:description>
	       <dcq:publisher></dcq:publisher>
	       <dcq:publisherResearch></dcq:publisherResearch>
	       <dcq:publisherAvailability>Available from http://dx.doi.org/10.1016/j.apsusc.2009.11.022</dcq:publisherAvailability>
	       <dcq:publisherSponsor></dcq:publisherSponsor>
	       <dcq:publisherCountry>Netherlands</dcq:publisherCountry>
		   <dc:contributingOrganizations></dc:contributingOrganizations>
	       <dc:date>2010-02-15</dc:date>
	       <dc:language>English</dc:language>
	       <dc:type>Journal Article</dc:type>
	       <dcq:typeQualifier></dcq:typeQualifier>
	       <dc:relation>Journal Name: Applied Surface Science; Journal Volume: 256; Journal Issue: 9; Other Information: Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)</dc:relation>
	       <dc:coverage></dc:coverage>
	       <dc:format>Medium: X; Size: page(s) 2750-2753</dc:format>
	       <dc:doi>https://doi.org/10.1016/J.APSUSC.2009.11.022</dc:doi>
	       <dc:identifier>PII: S0169-4332(09)01611-0</dc:identifier>
		   <dc:journalName>[]</dc:journalName>
		   <dc:journalIssue>9</dc:journalIssue>
		   <dc:journalVolume>256</dc:journalVolume>
	       <dc:identifierReport></dc:identifierReport>
	       <dcq:identifierDOEcontract></dcq:identifierDOEcontract>
	       <dc:identifierOther>Journal ID: ISSN 0169-4332; CODEN: ASUSEE; Other: PII: S0169-4332(09)01611-0; TRN: NL10R0820018531</dc:identifierOther>
	       <dc:source>NLN</dc:source>
	       <dc:rights></dc:rights>
	       <dc:dateEntry>2013-04-12</dc:dateEntry>
	       <dc:dateAdded></dc:dateAdded>
	       <dc:ostiId>22058049</dc:ostiId>
	       <dcq:identifier-purl></dcq:identifier-purl>
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