Abstract
An ultra-thin oxide film was obtained by oxidizing the H-terminated Si(001) surface by absolute C{sub 2}H{sub 5}OH solution. AFM observations showed that surface of the oxide film was very flat. Synchrotron radiation photoelectron spectroscopy (SRPES) analysis demonstrated that the oxide film was mainly composed of SiO{sub 2}, with an average thickness of about 0.24 nm. At 500 degree C of the substrate temperature, Ge quantum dots (QDs) of 9.5x10{sup 10} cm{sup -2} in density and (25 {+-} 5) nm in size were grown successfully on the SiO2 film. The result indicates that the SiO{sub 2} film made by wet-chemical method can act as epitaxial surface to grow Ge QDs of decreased size and increased density. (authors)
Kefan, Wang;
[1]
National Synchrotron Radiation Laboratory, Univ. of Science and Technology of China, Hefei (China)];
Pengshou, Xu;
[2]
Weifeng, Zhang;
Yuzong, Gu;
Haiwu, Zheng
[1]
- Institute of Microsystem Physics, School of Physics and Electronics, Henan Univ., Kaifeng (China)
- National Synchrotron Radiation Laboratory, Univ. of Science and Technology of China, Hefei (China)
Citation Formats
Kefan, Wang, National Synchrotron Radiation Laboratory, Univ. of Science and Technology of China, Hefei (China)], Pengshou, Xu, Weifeng, Zhang, Yuzong, Gu, and Haiwu, Zheng.
Wet-chemical growth of an ultra-thin silicon oxide film and its composition and thickness measured by SRPES.
China: N. p.,
2008.
Web.
Kefan, Wang, National Synchrotron Radiation Laboratory, Univ. of Science and Technology of China, Hefei (China)], Pengshou, Xu, Weifeng, Zhang, Yuzong, Gu, & Haiwu, Zheng.
Wet-chemical growth of an ultra-thin silicon oxide film and its composition and thickness measured by SRPES.
China.
Kefan, Wang, National Synchrotron Radiation Laboratory, Univ. of Science and Technology of China, Hefei (China)], Pengshou, Xu, Weifeng, Zhang, Yuzong, Gu, and Haiwu, Zheng.
2008.
"Wet-chemical growth of an ultra-thin silicon oxide film and its composition and thickness measured by SRPES."
China.
@misc{etde_21188302,
title = {Wet-chemical growth of an ultra-thin silicon oxide film and its composition and thickness measured by SRPES}
author = {Kefan, Wang, National Synchrotron Radiation Laboratory, Univ. of Science and Technology of China, Hefei (China)], Pengshou, Xu, Weifeng, Zhang, Yuzong, Gu, and Haiwu, Zheng}
abstractNote = {An ultra-thin oxide film was obtained by oxidizing the H-terminated Si(001) surface by absolute C{sub 2}H{sub 5}OH solution. AFM observations showed that surface of the oxide film was very flat. Synchrotron radiation photoelectron spectroscopy (SRPES) analysis demonstrated that the oxide film was mainly composed of SiO{sub 2}, with an average thickness of about 0.24 nm. At 500 degree C of the substrate temperature, Ge quantum dots (QDs) of 9.5x10{sup 10} cm{sup -2} in density and (25 {+-} 5) nm in size were grown successfully on the SiO2 film. The result indicates that the SiO{sub 2} film made by wet-chemical method can act as epitaxial surface to grow Ge QDs of decreased size and increased density. (authors)}
journal = []
issue = {4}
volume = {31}
place = {China}
year = {2008}
month = {Apr}
}
title = {Wet-chemical growth of an ultra-thin silicon oxide film and its composition and thickness measured by SRPES}
author = {Kefan, Wang, National Synchrotron Radiation Laboratory, Univ. of Science and Technology of China, Hefei (China)], Pengshou, Xu, Weifeng, Zhang, Yuzong, Gu, and Haiwu, Zheng}
abstractNote = {An ultra-thin oxide film was obtained by oxidizing the H-terminated Si(001) surface by absolute C{sub 2}H{sub 5}OH solution. AFM observations showed that surface of the oxide film was very flat. Synchrotron radiation photoelectron spectroscopy (SRPES) analysis demonstrated that the oxide film was mainly composed of SiO{sub 2}, with an average thickness of about 0.24 nm. At 500 degree C of the substrate temperature, Ge quantum dots (QDs) of 9.5x10{sup 10} cm{sup -2} in density and (25 {+-} 5) nm in size were grown successfully on the SiO2 film. The result indicates that the SiO{sub 2} film made by wet-chemical method can act as epitaxial surface to grow Ge QDs of decreased size and increased density. (authors)}
journal = []
issue = {4}
volume = {31}
place = {China}
year = {2008}
month = {Apr}
}