{
  "date" : "2008-04-15",
  "identifier_doecontract" : "",
  "subject" : "37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; ATOMIC FORCE MICROSCOPY; CHEMICAL COMPOSITION; CHEMICAL PREPARATION; DENSITY; EPITAXY; GERMANIUM; HYDROGEN; PHOTOELECTRON SPECTROSCOPY; QUANTUM DOTS; SILICA; SILICON OXIDES; SIZE; SUBSTRATES; SYNCHROTRON RADIATION; THICKNESS; THIN FILMS",
  "description" : "An ultra-thin oxide film was obtained by oxidizing the H-terminated Si(001) surface by absolute C{sub 2}H{sub 5}OH solution. AFM observations showed that surface of the oxide film was very flat. Synchrotron radiation photoelectron spectroscopy (SRPES) analysis demonstrated that the oxide film was mainly composed of SiO{sub 2}, with an average thickness of about 0.24 nm. At 500 degree C of the substrate temperature, Ge quantum dots (QDs) of 9.5x10{sup 10} cm{sup -2} in density and (25 {+-} 5) nm in size were grown successfully on the SiO2 film. The result indicates that the SiO{sub 2} film made by wet-chemical method can act as epitaxial surface to grow Ge QDs of decreased size and increased density. (authors)",
  "language" : "Chinese",
  "identifier_report" : "",
  "publisher_sponsor" : "",
  "publisher_country" : "China",
  "source" : "INIS",
  "purl" : "",
  "title" : "Wet-chemical growth of an ultra-thin silicon oxide film and its composition and thickness measured by SRPES",
  "type" : "Journal Article",
  "subject_related" : "",
  "relation" : "Journal Name: Nuclear Techniques; Journal Volume: 31; Journal Issue: 4; Other Information: 4 figs., 1 tab., 15 refs",
  "entry_date" : "2010-01-01",
  "subject_list" : [ "37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY", "ATOMIC FORCE MICROSCOPY", "CHEMICAL COMPOSITION", "CHEMICAL PREPARATION", "DENSITY", "EPITAXY", "GERMANIUM", "HYDROGEN", "PHOTOELECTRON SPECTROSCOPY", "QUANTUM DOTS", "SILICA", "SILICON OXIDES", "SIZE", "SUBSTRATES", "SYNCHROTRON RADIATION", "THICKNESS", "THIN FILMS" ],
  "publisher_availability" : "",
  "rights" : "",
  "announced_date" : "2009-08-17",
  "type_qualifier" : "",
  "has_fulltext" : false,
  "coverage" : "",
  "identifier" : "",
  "journal_volume" : "31",
  "creator" : "Kefan, Wang [Institute of Microsystem Physics, School of Physics and Electronics, Henan Univ., Kaifeng (China)]; National Synchrotron Radiation Laboratory, Univ. of Science and Technology of China, Hefei (China)]; Pengshou, Xu [National Synchrotron Radiation Laboratory, Univ. of Science and Technology of China, Hefei (China)]; Weifeng, Zhang; Yuzong, Gu; Haiwu, Zheng [Institute of Microsystem Physics, School of Physics and Electronics, Henan Univ., Kaifeng (China)]",
  "site_ownership_code" : "INIS",
  "osti_id" : "21188302",
  "journal_issue" : "4",
  "resource_type" : "JOUR",
  "format" : "Medium: X; Size: page(s) 255-259",
  "journal_name" : [ ],
  "contributing_organizations" : "",
  "citation_location" : "https://www.osti.gov/etdeweb/biblio/21188302",
  "publication_year" : 2008,
  "subject_list_commas" : "37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY, ATOMIC FORCE MICROSCOPY, CHEMICAL COMPOSITION, CHEMICAL PREPARATION, DENSITY, EPITAXY, GERMANIUM, HYDROGEN, PHOTOELECTRON SPECTROSCOPY, QUANTUM DOTS, SILICA, SILICON OXIDES, SIZE, SUBSTRATES, SYNCHROTRON RADIATION, THICKNESS, THIN FILMS",
  "publisher" : "",
  "identifier_other" : "Journal ID: ISSN 0253-3219; NUTEDL; TRN: CN0901689060402",
  "publisher_research" : "",
  "creators_list" : [ "Kefan, Wang [Institute of Microsystem Physics, School of Physics and Electronics, Henan Univ., Kaifeng (China)]", "National Synchrotron Radiation Laboratory, Univ. of Science and Technology of China, Hefei (China)]", "Pengshou, Xu [National Synchrotron Radiation Laboratory, Univ. of Science and Technology of China, Hefei (China)]", "Weifeng, Zhang", "Yuzong, Gu", "Haiwu, Zheng [Institute of Microsystem Physics, School of Physics and Electronics, Henan Univ., Kaifeng (China)]" ],
  "doi" : "https://doi.org/"
}