Wet-chemical growth of an ultra-thin silicon oxide film and its composition and thickness measured by SRPES Kefan, Wang [Institute of Microsystem Physics, School of Physics and Electronics, Henan Univ., Kaifeng (China)]; National Synchrotron Radiation Laboratory, Univ. of Science and Technology of China, Hefei (China)]; Pengshou, Xu [National Synchrotron Radiation Laboratory, Univ. of Science and Technology of China, Hefei (China)]; Weifeng, Zhang; Yuzong, Gu; Haiwu, Zheng [Institute of Microsystem Physics, School of Physics and Electronics, Henan Univ., Kaifeng (China)] 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; ATOMIC FORCE MICROSCOPY; CHEMICAL COMPOSITION; CHEMICAL PREPARATION; DENSITY; EPITAXY; GERMANIUM; HYDROGEN; PHOTOELECTRON SPECTROSCOPY; QUANTUM DOTS; SILICA; SILICON OXIDES; SIZE; SUBSTRATES; SYNCHROTRON RADIATION; THICKNESS; THIN FILMS An ultra-thin oxide film was obtained by oxidizing the H-terminated Si(001) surface by absolute C{sub 2}H{sub 5}OH solution. AFM observations showed that surface of the oxide film was very flat. Synchrotron radiation photoelectron spectroscopy (SRPES) analysis demonstrated that the oxide film was mainly composed of SiO{sub 2}, with an average thickness of about 0.24 nm. At 500 degree C of the substrate temperature, Ge quantum dots (QDs) of 9.5x10{sup 10} cm{sup -2} in density and (25 {+-} 5) nm in size were grown successfully on the SiO2 film. The result indicates that the SiO{sub 2} film made by wet-chemical method can act as epitaxial surface to grow Ge QDs of decreased size and increased density. (authors) China 2008-04-15 Chinese Journal Article Journal Name: Nuclear Techniques; Journal Volume: 31; Journal Issue: 4; Other Information: 4 figs., 1 tab., 15 refs Medium: X; Size: page(s) 255-259 https://doi.org/ [] 4 31 Journal ID: ISSN 0253-3219; NUTEDL; TRN: CN0901689060402 INIS 2010-01-01 21188302