Abstract
Nanocrystalline silicon carbide (nc-SiC) films are prepared by low-frequency inductively coupled plasma chemical vapor deposition from feedstock gases silane and methane diluted with hydrogen at a substrate temperature of 500 {sup o}C. The effect of different hydrogen dilution ratios X [hydrogen flow (sccm) / silane + methane flow (sccm)] on the growth of nc-SiC films is investigated by X-ray diffraction, scanning electron microscopy, Fourier transform infrared (FTIR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). At a low hydrogen dilution ratio X, cubic silicon carbide is the main crystal phase; whereas at a high hydrogen dilution ratio X, hexagonal silicon carbide is the main crystal phase. The SiC crystal phase transformation may be explained by the different surface mobility of reactive Si-based and C-based radicals deposited at different hydrogen dilution ratios X. The FTIR and XPS analyses show that the Si-C bonds are the main bonds in the films and elemental composition of SiC is nearly stoichiometric with almost equal share of silicon and carbon atoms.
Qijin, Cheng;
[1]
Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)];
Xu, S;
[1]
Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)], E-mail: shuyan.xu@nie.edu.sg;
Chai, J W;
Huang, S Y;
Ren, Y P;
Long, J D;
Rutkevych, P P;
[1]
Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)];
Ostrikov, K;
[2]
Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)]
- Plasma Sources and Applications Center, NIE, Nanyang Technological University, Singapore 637616 (Singapore)
- Plasma Nanoscience at Complex Systems, School of Physics, University of Sydney, Sydney NSW 2006 (Australia)
Citation Formats
Qijin, Cheng, Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)], Xu, S, Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)], E-mail: shuyan.xu@nie.edu.sg, Chai, J W, Huang, S Y, Ren, Y P, Long, J D, Rutkevych, P P, Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)], Ostrikov, K, and Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)].
Influence of hydrogen dilution on the growth of nanocrystalline silicon carbide films by low-frequency inductively coupled plasma chemical vapor deposition.
Netherlands: N. p.,
2008.
Web.
doi:10.1016/j.tsf.2007.10.091.
Qijin, Cheng, Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)], Xu, S, Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)], E-mail: shuyan.xu@nie.edu.sg, Chai, J W, Huang, S Y, Ren, Y P, Long, J D, Rutkevych, P P, Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)], Ostrikov, K, & Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)].
Influence of hydrogen dilution on the growth of nanocrystalline silicon carbide films by low-frequency inductively coupled plasma chemical vapor deposition.
Netherlands.
https://doi.org/10.1016/j.tsf.2007.10.091
Qijin, Cheng, Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)], Xu, S, Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)], E-mail: shuyan.xu@nie.edu.sg, Chai, J W, Huang, S Y, Ren, Y P, Long, J D, Rutkevych, P P, Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)], Ostrikov, K, and Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)].
2008.
"Influence of hydrogen dilution on the growth of nanocrystalline silicon carbide films by low-frequency inductively coupled plasma chemical vapor deposition."
Netherlands.
https://doi.org/10.1016/j.tsf.2007.10.091.
@misc{etde_21123131,
title = {Influence of hydrogen dilution on the growth of nanocrystalline silicon carbide films by low-frequency inductively coupled plasma chemical vapor deposition}
author = {Qijin, Cheng, Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)], Xu, S, Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)], E-mail: shuyan.xu@nie.edu.sg, Chai, J W, Huang, S Y, Ren, Y P, Long, J D, Rutkevych, P P, Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)], Ostrikov, K, and Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)]}
abstractNote = {Nanocrystalline silicon carbide (nc-SiC) films are prepared by low-frequency inductively coupled plasma chemical vapor deposition from feedstock gases silane and methane diluted with hydrogen at a substrate temperature of 500 {sup o}C. The effect of different hydrogen dilution ratios X [hydrogen flow (sccm) / silane + methane flow (sccm)] on the growth of nc-SiC films is investigated by X-ray diffraction, scanning electron microscopy, Fourier transform infrared (FTIR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). At a low hydrogen dilution ratio X, cubic silicon carbide is the main crystal phase; whereas at a high hydrogen dilution ratio X, hexagonal silicon carbide is the main crystal phase. The SiC crystal phase transformation may be explained by the different surface mobility of reactive Si-based and C-based radicals deposited at different hydrogen dilution ratios X. The FTIR and XPS analyses show that the Si-C bonds are the main bonds in the films and elemental composition of SiC is nearly stoichiometric with almost equal share of silicon and carbon atoms.}
doi = {10.1016/j.tsf.2007.10.091}
journal = []
issue = {18}
volume = {516}
place = {Netherlands}
year = {2008}
month = {Jul}
}
title = {Influence of hydrogen dilution on the growth of nanocrystalline silicon carbide films by low-frequency inductively coupled plasma chemical vapor deposition}
author = {Qijin, Cheng, Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)], Xu, S, Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)], E-mail: shuyan.xu@nie.edu.sg, Chai, J W, Huang, S Y, Ren, Y P, Long, J D, Rutkevych, P P, Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)], Ostrikov, K, and Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)]}
abstractNote = {Nanocrystalline silicon carbide (nc-SiC) films are prepared by low-frequency inductively coupled plasma chemical vapor deposition from feedstock gases silane and methane diluted with hydrogen at a substrate temperature of 500 {sup o}C. The effect of different hydrogen dilution ratios X [hydrogen flow (sccm) / silane + methane flow (sccm)] on the growth of nc-SiC films is investigated by X-ray diffraction, scanning electron microscopy, Fourier transform infrared (FTIR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). At a low hydrogen dilution ratio X, cubic silicon carbide is the main crystal phase; whereas at a high hydrogen dilution ratio X, hexagonal silicon carbide is the main crystal phase. The SiC crystal phase transformation may be explained by the different surface mobility of reactive Si-based and C-based radicals deposited at different hydrogen dilution ratios X. The FTIR and XPS analyses show that the Si-C bonds are the main bonds in the films and elemental composition of SiC is nearly stoichiometric with almost equal share of silicon and carbon atoms.}
doi = {10.1016/j.tsf.2007.10.091}
journal = []
issue = {18}
volume = {516}
place = {Netherlands}
year = {2008}
month = {Jul}
}