Influence of hydrogen dilution on the growth of nanocrystalline silicon carbide films by low-frequency inductively coupled plasma chemical vapor deposition Qijin, Cheng [Plasma Sources and Applications Center, NIE, Nanyang Technological University, Singapore 637616 (Singapore)]; Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)]; Xu, S [Plasma Sources and Applications Center, NIE, Nanyang Technological University, Singapore 637616 (Singapore)]; Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)], E-mail: shuyan.xu@nie.edu.sg; Chai, J W; Huang, S Y; Ren, Y P; Long, J D; Rutkevych, P P [Plasma Sources and Applications Center, NIE, Nanyang Technological University, Singapore 637616 (Singapore)]; Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)]; Ostrikov, K [Plasma Nanoscience at Complex Systems, School of Physics, University of Sydney, Sydney NSW 2006 (Australia)]; Institute of Advanced Studies, Nanyang Technological University, Singapore 637616 (Singapore)] 36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CRYSTAL-PHASE TRANSFORMATIONS; CRYSTALS; FILMS; HYDROGEN; INFRARED SPECTRA; METHANE; NANOSTRUCTURES; PLASMA; RADICALS; SCANNING ELECTRON MICROSCOPY; SILANES; SILICON CARBIDES; TEMPERATURE RANGE 0400-1000 K; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY Nanocrystalline silicon carbide (nc-SiC) films are prepared by low-frequency inductively coupled plasma chemical vapor deposition from feedstock gases silane and methane diluted with hydrogen at a substrate temperature of 500 {sup o}C. The effect of different hydrogen dilution ratios X [hydrogen flow (sccm) / silane + methane flow (sccm)] on the growth of nc-SiC films is investigated by X-ray diffraction, scanning electron microscopy, Fourier transform infrared (FTIR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). At a low hydrogen dilution ratio X, cubic silicon carbide is the main crystal phase; whereas at a high hydrogen dilution ratio X, hexagonal silicon carbide is the main crystal phase. The SiC crystal phase transformation may be explained by the different surface mobility of reactive Si-based and C-based radicals deposited at different hydrogen dilution ratios X. The FTIR and XPS analyses show that the Si-C bonds are the main bonds in the films and elemental composition of SiC is nearly stoichiometric with almost equal share of silicon and carbon atoms. Available from http://dx.doi.org/10.1016/j.tsf.2007.10.091;INIS Netherlands 2008-07-31 English Journal Article Journal Name: Thin Solid Films; Journal Volume: 516; Journal Issue: 18; Other Information: DOI: 10.1016/j.tsf.2007.10.091; PII: S0040-6090(07)01769-5; Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA) Medium: X; Size: page(s) 5991-5995 https://doi.org/10.1016/j.tsf.2007.10.091 [] 18 516 Journal ID: ISSN 0040-6090; THSFAP; TRN: NL08S9013005834 NLN 2010-01-01 21123131